位置：首页 > IC中文资料第11418页 > IPW65R420CFD
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IPW65R420CFD | 650VCoolMOSC6CFDPowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  |   |
IPW65R420CFD | N-ChannelMOSFETTransistor •DESCRITION •FastSwitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤420mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
IPW65R420CFD | MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.42Ω·Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-ChannelMOSFETTransistor •DESCRITION •FastSwitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤420mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
650VCoolMOSC6CFDPowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
11A竊?50VN-CHANNELMOSFET 文件：461.65 Kbytes Page：6 Pages | KIAGuangdong Keyia Semiconductor Technology Co., Ltd 可易亚半导体广东可易亚半导体科技有限公司 |  | |
IPW65R420CFD产品属性
- 类型
描述
- 型号
IPW65R420CFD
- 功能描述
MOSFET CoolMOS 650V 420mOhm CFD2 N-Chan MOSFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon/英飞凌 |
21+ |
PG-TO247-3 |
8800 |
公司只作原装正品 |
|||
infineon/英飞凌 |
2021/2022+ |
NA |
7000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
Infineon/英飞凌 |
23+ |
PG-TO247-3 |
10000 |
原装正品，支持实单 |
|||
Infineon/英飞凌 |
23+ |
PG-TO247-3 |
25000 |
原装正品,假一赔十! |
|||
Infineon/英飞凌 |
21+ |
PG-TO247-3 |
13880 |
公司只售原装,支持实单 |
|||
Infineon(英飞凌) |
23+ |
TO-247 |
7962 |
支持大陆交货,美金交易。原装现货库存。 |
|||
INF |
23+ |
NA/ |
3950 |
原装现货,当天可交货,原型号开票 |
|||
Infineon/英飞凌 |
21+ |
PG-TO247-3 |
6820 |
只做原装,质量保证 |
|||
Infineon(英飞凌) |
2021/2022+ |
标准封装 |
7000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
INFINE0N |
21+ |
PG-TO247-3 |
32568 |
100%进口原装!长期供应!绝对优势价格(诚信经营 |
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IPW65R420CFD规格书下载地址
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DdatasheetPDF页码索引
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