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位置：首页 > IC中文资料第930页 > IPW60R2

IPW60R2价格

参考价格：￥12.6676

型号：IPW60R250CP 品牌：Infineon 备注：这里有IPW60R2多少钱，2024年最近7天走势，今日出价，今日竞价，IPW60R2批发/采购报价，IPW60R2行情走势销售排行榜，IPW60R2报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IPW60R230P6

N-ChannelMOSFETTransistor

•DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤230mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IPW60R230P6

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •IncreasedMOSFETdv/dtruggedness •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhi

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPW60R250CP

CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology

Features •Lowestfigure-of-meritRONxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant CoolMOSCPisdesignedfor: HardswitchingSMPStopologies

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPW60R250CP

N-ChannelMOSFETTransistor

•DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤250mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IPW60R280C6

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhighcommutationruggedness •Easyto

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPW60R280C6

N-ChannelMOSFETTransistor

•DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤280mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IPW60R280C6

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETS,designedaccordingtothesuperjunction(SJ)principle andpioneeredbyInfineonTechnologies.CoolMOS™C6series combinestheexperienceoftheleadingSJMOSFETsupplierwith highclassinnovation.Theoffere

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPW60R280C6

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhighcommutationruggedness •Easyto

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPW60R280C6FKSA1

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhighcommutationruggedness •Easyto

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPW60R280E6

600VCoolMOSE6PowerTransistor

Description CoolMOSisarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOSE6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theoffereddevi

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPW60R280P6

N-ChannelMOSFETTransistor

•DESCRITION •Fastswitching ​​​​​​​ •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤280mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IPW60R280P6

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •IncreasedMOSFETdv/dtruggedness •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhi

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPW60R299CP

N-ChannelMOSFETTransistor

•DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤299mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IPW60R299CP

CoolMOSPowerTransistor

Features •Lowestfigure-of-meritRonxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC1) •Pb-freeleadplating;RoHScompliant CoolMOSCPisdesignedfor: HardswitchingSMPStopologies

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPW60R230P6

MetalOxideSemiconductorFieldEffectTransistor

文件：2.63848 Mbytes Page：19 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPW60R230P6_15

MetalOxideSemiconductorFieldEffectTransistor

文件：2.63848 Mbytes Page：19 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPW60R280E6

MetalOxideSemiconductorFieldEffectTransistor

文件：1.1053 Mbytes Page：17 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPW60R280E6

N-ChannelMOSFETTransistor

文件：338.85 Kbytes Page：2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IPW60R280P6

MetalOxideSemiconductorFieldEffectTransistor

文件：2.62743 Mbytes Page：19 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPW60R280P6_15

MetalOxideSemiconductorFieldEffectTransistor

文件：2.62743 Mbytes Page：19 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPW60R299CP

CoolMOSPowerTransistor

文件：777.27 Kbytes Page：11 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
IPW60R299CP_08

CoolMOSPowerTransistor

文件：777.27 Kbytes Page：11 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
UVV60R2HN

5x7mm,3.3Volt,LVPECL/LVDS,VCXO

文件：284.27 Kbytes Page：1 Pages

MTRONPTI

Mtron Industries, Inc.

MTRONPTI
UVV60R2HN

5x7mm,3.3Volt,LVPECL/LVDS,VCXO

文件：493.92 Kbytes Page：2 Pages

MTRONPTI

Mtron Industries, Inc.

MTRONPTI
UVV60R2LN

5x7mm,3.3Volt,LVPECL/LVDS,VCXO

文件：284.27 Kbytes Page：1 Pages

MTRONPTI

Mtron Industries, Inc.

MTRONPTI
UVV60R2LN

5x7mm,3.3Volt,LVPECL/LVDS,VCXO

文件：493.92 Kbytes Page：2 Pages

MTRONPTI

Mtron Industries, Inc.

MTRONPTI
UVV60R2PN

5x7mm,3.3Volt,LVPECL/LVDS,VCXO

文件：284.27 Kbytes Page：1 Pages

MTRONPTI

Mtron Industries, Inc.

MTRONPTI

IPW60R2产品属性

  • 类型

    描述

  • 型号

    IPW60R2

  • 功能描述

    MOSFET COOL MOS N-CH 600V 0.250Ohms

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS（导通）

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

IPW60R2供应商更多...

更新时间：2024-5-16 23:38:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
中天科工半导体（深圳）有限公司
IPW60R299CP
INFINEON
20+
TO-247
36900
原装优势主营型号-可开原型号增税票
询价
深圳市纳艾斯科技有限公司
IPW60R299CP
INFINEO
2020+
TO-247
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
深圳市科恒伟业电子有限公司
IPW60R299CP
INF
1715+
SOP
251156
只做原装正品现货假一赔十!
询价
千层芯半导体(深圳)有限公司
IPW60R299CP
Infineon
17+
TO220-3
17900
MOSFET管
询价
深圳硅原半导体有限公司
IPW60R299CP
INFINEON/英飞凌
TO247-3
28533
原盒原标,正品现货 诚信经营 价格美丽 假一罚十!
询价
深圳市博浩通科技有限公司
IPW60R299CP
INFINEON
23+
PG-TO247
8600
全新原装现货
询价
深圳市卓越微芯电子有限公司
IPW60R299CP
INFINEO
2020+
TO-247
10
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
易创佳业科技（深圳）有限公司
IPW60R299CP
Infineon Technologies
23+
TO2473
9000
原装正品，支持实单
询价
深圳市芯福林电子科技有限公司
IPW60R299CP
Infineon Technologies
21+
TO2473
13880
公司只售原装,支持实单
询价
深圳市近平电子有限公司
IPW60R299CP
Infineon
10+
MA
6000
绝对原装自己现货
询价

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IPW60R2规格书下载地址

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IPW60R2数据表相关新闻

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