600VCoolMOS??P6PowerTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Theoffereddevicesprovideallbenefitsofafastsw

N-ChannelMOSFETTransistor

文件：335.77 Kbytes Page：2 Pages

IncreasedMOSFETdv/dtruggedness

文件：2.27598 Mbytes Page：18 Pages

600VCoolMOS짧P7PowerTransistor

文件：1.40696 Mbytes Page：14 Pages

N-ChannelMOSFETTransistor

文件：335.53 Kbytes Page：2 Pages

N-ChannelMOSFETTransistor

•DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.099Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

N-ChannelMOSFETTransistor

•DESCRITION •HighPeakCurrentCapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤99mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

IscN-ChannelMOSFETTransistor

•FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications

CoolMOSPowerTransistor

Features •WorldwidebestRds,oninTO263 •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant CoolMOSCPisspeciallydesignedfor: •HardswitchingSMPStopologiesfor

CoolMOSPowerTransistor

Features •WorldwidebestRds,oninTO263 •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •AutomotiveAECQ101qualified •Greenpackage(RoHScompliant) CoolMOSCPAisspeciallydesignedfor: •DC/DCconvertersforAutomotiveApplications