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IPD65R660CFD价格
参考价格：￥4.0312
型号：IPD65R660CFD 品牌：Infineon 备注：这里有IPD65R660CFD多少钱，2024年最近7天走势，今日出价，今日竞价，IPD65R660CFD批发/采购报价，IPD65R660CFD行情走势销售排行榜，IPD65R660CFD报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IPD65R660CFD | 650VCoolMOSCFDPowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  |   |
IPD65R660CFD | MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
IPD65R660CFD | N-ChannelMOSFETTransistor •DESCRITION •Highcommutationruggedness •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.66Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
MetalOxideSemiconductorFieldEffectTransistor 文件：1.42987 Mbytes Page：14 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
N-ChannelMOSFETTransistor •DESCRITION •Highcommutationruggedness •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.66Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
SuperiorAvalancheRuggedTechnology 文件：285.62 Kbytes Page：8 Pages | SEMIHOW SemiHow Co.,Ltd. |  | | |
650VN-ChannelSuperJunctionMOSFET 文件：285.62 Kbytes Page：8 Pages | SEMIHOW SemiHow Co.,Ltd. | | | |
SuperiorAvalancheRuggedTechnology 文件：188.97 Kbytes Page：7 Pages | SEMIHOW SemiHow Co.,Ltd. | | | |
650VN-ChannelSuperJunctionMOSFET 文件：285.62 Kbytes Page：8 Pages | SEMIHOW SemiHow Co.,Ltd. | | |
IPD65R660CFD产品属性
- 类型
描述
- 型号
IPD65R660CFD
- 功能描述
MOSFET COOLM 650V CFD PWR TRANS
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
22+ |
SOT-252 |
100000 |
代理渠道/只做原装/可含税 |
|||
INFINEON/英飞凌 |
24+ |
TO252 |
98000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
Infineon Technologies |
24+ |
PG-TO252-3-313 |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
Infineon |
23+ |
PG-TO252-3 |
15500 |
英飞凌优势渠道全系列在售 |
|||
INFINEON/英飞凌 |
23+ |
TO-252 |
89630 |
当天发货全新原装现货 |
|||
Infineon Technologies |
30000 |
原装现货,支持实单 |
|||||
INFINEON/英飞凌 |
24+ |
NA |
860000 |
明嘉莱只做原装正品现货 |
|||
INFINEON |
1822+ |
TO252 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
Infineon(英飞凌) |
23+ |
标准封装 |
7000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
INFINEON |
SOT-252 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
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IPD65R660CFD规格书下载地址
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DdatasheetPDF页码索引
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