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IPD65R600E6价格
参考价格：￥3.8671
型号：IPD65R600E6 品牌：Infineon 备注：这里有IPD65R600E6多少钱，2024年最近7天走势，今日出价，今日竞价，IPD65R600E6批发/采购报价，IPD65R600E6行情走势销售排行榜，IPD65R600E6报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IPD65R600E6 | 650VCoolMOSE6PowerTransistor Description CoolMOSTMisarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOSTMDEseriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresultin | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  |   |
IPD65R600E6 | N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •Veryhighcommutationruggedness •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.6Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
IPD65R600E6 | MetallOxideSemiconductorFieldEffectTransistor 文件：1.17442 Mbytes Page：18 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •Veryhighcommutationruggedness •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.6Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.6Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
IscN-ChannelMOSFETTransistor •FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Reducedswitchingandconductionlosses •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
650VCoolMOSE6PowerTransistor Description CoolMOSTMisarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOSTMDEseriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresultin | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
MetallOxideSemiconductorFieldEffectTransistor 文件：1.17442 Mbytes Page：18 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
IPD65R600E6产品属性
- 类型
描述
- 型号
IPD65R600E6
- 功能描述
MOSFET N-CH 700V 7.3A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
TO252 |
7906200 |
|||||
Infineon/英飞凌 |
23+ |
PG-TO252-3 |
25000 |
原装正品,假一赔十! |
|||
INFINEON |
22+23+ |
TO-252 |
34619 |
绝对原装正品全新进口深圳现货 |
|||
Infineon/英飞凌 |
21+ |
PG-TO252-3 |
6820 |
只做原装,质量保证 |
|||
INFINEON/英飞凌 |
2024+实力库存 |
TO-252 |
3880 |
只做原厂渠道 可追溯货源 |
|||
INFINEON/英飞凌 |
21+ |
TO-252 |
5000 |
原装进口,假一罚十,低价供应 |
|||
Infineon(英飞凌) |
23+ |
N/A |
589610 |
新到现货 原厂一手货源 价格秒杀代理! |
|||
NXP-恩智浦 |
24+25+/26+27+ |
车规-晶体管 |
9328 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
INFINEON |
21+ |
TO-252 |
35200 |
一级代理/放心采购 |
|||
INFINEON |
17+ |
TO-252 |
6200 |
100%原装正品现货 |
IPD65R600E6芯片相关品牌
IPD65R600E6规格书下载地址
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DdatasheetPDF页码索引
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