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IPD65R600C6价格
参考价格：￥3.8671
型号：IPD65R600C6 品牌：Infineon 备注：这里有IPD65R600C6多少钱，2024年最近7天走势，今日出价，今日竞价，IPD65R600C6批发/采购报价，IPD65R600C6行情走势销售排行榜，IPD65R600C6报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IPD65R600C6 | 650VCoolMOSC6PowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhighcommutationruggedness •Easyto | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  |   |
IPD65R600C6 | N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.6Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
IPD65R600C6 | MaterialContentDataSheet 文件：33.26 Kbytes Page：1 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
MaterialContentDataSheet 文件：33.26 Kbytes Page：1 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.6Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.6Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice p | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
650VCoolMOSC6PowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhighcommutationruggedness •Easyto | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
IscN-ChannelMOSFETTransistor •FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Reducedswitchingandconductionlosses •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
650VCoolMOSC6PowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhighcommutationruggedness •Easyto | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
IPD65R600C6产品属性
- 类型
描述
- 型号
IPD65R600C6
- 功能描述
MOSFET 650V CoolMOS C6 Power Transistor
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon/英飞凌 |
21+ |
PG-TO252-3 |
8800 |
公司只作原装正品 |
|||
INFINEO |
2020+ |
TO-252 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
INFINEON |
20+ |
DPAK(TO-252) |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
INFINEON/英飞凌 |
22+ |
TO-252 |
100000 |
代理渠道/只做原装/可含税 |
|||
Infineon/英飞凌 |
2023+ |
PG-TO252-3 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
INFINEON/英飞凌 |
23+ |
TO-252 |
76000 |
IR英飞凌VISHAY专做 全新原装进口正品假一赔百,可开13 |
|||
INFINEON |
1822+ |
TO252 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
INFINEON |
22+ |
TO-252 |
6000 |
原厂原装,价格优势!13246658303 |
|||
INFINEON/英飞凌 |
2021+ |
TO-252 |
18058 |
原装进口假一罚十 |
|||
Infineon(英飞凌) |
23+ |
NA |
7000 |
工厂现货!原装正品! |
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