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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IPD60R180C7 | N-ChannelMOSFETTransistor •DESCRITION •Suitableforhardandsoftswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.18Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  |   |
IPD60R180C7 | MetalOxideSemiconductorFieldEffectTransistor 文件：1.17737 Mbytes Page：15 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | |
MetalOxideSemiconductorFieldEffectTransistor 文件：1.17737 Mbytes Page：15 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
N-ChannelMOSFETTransistor •DESCRITION •Suitableforhardandsoftswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.18Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-ChannelMOSFETTransistor •DESCRIPTION •CombinestheexperienceoftheleadingSJMOSFETsupplier withhighclassinnovation •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.18Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevic | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-ChannelMOSFETTransistor •DESCRITION •FastSwitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤180mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
MetalOxideSemiconductorFieldEffectTransistor Features •Suitableforhardandsoftswitching(PFCandhighperformanceLLC) •IncreasedMOSFETdv/dtruggednessto120V/ns •IncreasedefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg •BestinclassRDS(on)/package •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
MaterialContentDataSheet 文件：33.1 Kbytes Page：1 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon/英飞凌 |
23+ |
PG-TO252-3 |
25000 |
原装正品,假一赔十! |
|||
Infineon/英飞凌 |
21+ |
PG-TO252-3 |
6000 |
原装现货正品 |
|||
Infineon(英飞凌) |
23+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
INFINEO |
2020+ |
TO-252 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
infineon/英飞凌 |
2021/2022+ |
NA |
7000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
INFINEON/英飞凌 |
24+ |
PB-FREE |
990000 |
明嘉莱只做原装正品现货 |
|||
Infineon/英飞凌 |
21+ |
PG-TO252-3 |
6820 |
只做原装,质量保证 |
|||
Infineon(英飞凌) |
23+ |
N/A |
589610 |
新到现货 原厂一手货源 价格秒杀代理! |
|||
INFINEON/英飞凌 |
TO252 |
265209 |
假一罚十原包原标签常备现货! |
||||
INFINEON-英飞凌 |
24+25+/26+27+ |
TO-252-3 |
9328 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
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深圳市瑞智芯科技有限公司 联系人：彭先生 QQ：2851196982 直线：0755-82991809 手机：13787628849 邮箱：pc@szruizhixin.com 地址：深圳市福田区中航路42号中航北苑大厦A座6A2 型号：IPD60R170CFD7 类别分立半导体产品晶体管-FET，MOSFET-单个 制造商InfineonTechnologies 包装：2500 封装：TO-252-3
2021-9-18IPD60R600C6
https://hch01.114ic.com/
2020-11-13
DdatasheetPDF页码索引
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