位置：首页 > IC中文资料 > IMZA120R014M1H
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IMZA120R014M1H | CoolSiC??1200VSiCTrenchMOSFET:SiliconCarbideMOSFETwith.XTinterconnectiontechnology Features •VDSS=1200VatTvj=25°C •IDCC=127AatTvj=25°C •RDS(on)=14mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •Shortcircuitwithstandtime3μs •Benchmarkgatethresholdvoltage,VGS(th)=4.2V •Robustagainstparasiticturnon,0Vturn-offgatevoltagec | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  |   |
IMZA120R014M1H | EiceDRIVER™1ED314xMU12F(1ED-X3Compact) Features •Single-channelisolatedgatedriver •Forusewith600V/650V/1200V/1700V/2300VIGBTs,SiandSiCMOSFETs •Upto6.5Atypicalpeakoutputcurrent •45nspropagationdelaywith7nspart-to-partmatching(skew) •35Vabsolutemaximumoutputsupplyvoltage •Highcommon-mode | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
CoolSiC??1200VSiCTrenchMOSFET:siliconcarbideMOSFET Features •VDSS=1200VatTvj=25°C •IDCC=127AatTvj=25°C •RDS(on)=14mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •Shortcircuitwithstandtime3μs •Benchmarkgatethresholdvoltage,VGS(th)=4.2V •Robustagainstparasiticturnon,0Vturn-offgatevoltagec | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon/英飞凌 |
21+ |
PG-TO247-4-3 |
6000 |
原装现货正品 |
|||
23+ |
N/A |
54000 |
一级代理放心采购 |
||||
INFINEON |
22+ |
30000 |
只做原装 |
||||
INFINEON/英飞凌 |
22+ |
TO-247 |
958 |
公司现货库存,有挂就有货,支持实单 |
|||
Infineon/英飞凌 |
2023+ |
PG-TO247-4-3 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
Infineon/英飞凌 |
21+ |
PG-TO247-4-3 |
10000 |
原装,品质保证,请来电咨询 |
|||
Infineon/英飞凌 |
21+ |
PG-TO247-4-3 |
6820 |
只做原装,质量保证 |
|||
Infineon(英飞凌) |
23+ |
标准封装 |
9548 |
原厂渠道供应,大量现货,原型号开票。 |
|||
Infineon |
23+ |
PG-TO247-4 |
15500 |
英飞凌优势渠道全系列在售 |
|||
Infineon(英飞凌) |
2112+ |
PG-TO247-4-3 |
115000 |
240个/管一级代理专营品牌!原装正品,优势现货,长期 |
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IMZA120R014M1H规格书下载地址
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DdatasheetPDF页码索引
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