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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IMBG65R022M1H | 650VCoolSiC짧M1SiCTrenchPowerDevice 文件：1.5931 Mbytes Page：15 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  |   |
包装：管件 描述：SILICON CARBIDE MOSFET PG-TO263- 分立半导体产品 晶体管 - FET，MOSFET - 单个 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
MOSFET650VCoolSiCªM1SiCTrenchPowerDevice Features •Optimizedswitchingbehaviorathighercurrents •CommutationrobustfastbodydiodewithlowQf •Superiorgateoxidereliability •Tj,max=175°Candexcellentthermalbehavior •LowerRDS(on)andpulsecurrentdependencyontemperature •Increasedavalanchecapability •Compatib | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
SiCN-ChannelMOSFET FEATURES ·DrainCurrent-ID=79A@TC=25℃ ·DrainSourceVoltage-VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=42mΩ(Max)@VGS=20V APPLICATIONS ·SwitchModePowerSupply(SMPS) ·UninterruptiblePowerSupply(UPS) ·PowerFactorCorrection(PFC) | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon |
22+ |
7040 |
原装正品优势现货! |
||||
Infineon(英飞凌) |
23+ |
标准封装 |
10048 |
原厂渠道供应,大量现货,原型号开票。 |
|||
INFINEON |
22+ |
原封装 |
81220 |
只做原装进口货 |
|||
Infineon |
24+ |
PG-TO263-7 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
INFINEON |
24+ |
原封装 |
81220 |
郑重承诺只做原装进口现货 |
|||
INFINEON |
23/22+ |
NA |
2000 |
全线可订货.含税开票 |
|||
Infineon Technologies |
23+ |
SMD |
3652 |
原厂正品现货供应SIC全系列 |
|||
Infineon |
22+/23+ |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
|||
23+ |
N/A |
1000 |
全新原装亏本出13157115792 |
||||
Infineon |
23+ |
PG-TO263-7 |
15500 |
英飞凌优势渠道全系列在售 |
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IMBG65R022M1H规格书下载地址
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