位置：首页 > IC中文资料第7341页 > IDT71V67703S85BG
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IDT71V67703S85BG | 256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect 文件：975.41 Kbytes Page：23 Pages | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 |  |   |
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect 文件：975.41 Kbytes Page：23 Pages | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportsfastaccesstimes: –7.5nsupto117MHzclockfrequency –8.0nsupto100MHzclockfrequency –8.5nsupto87MHzclockfrequency ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritec | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | | |
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportsfastaccesstimes: –7.5nsupto117MHzclockfrequency –8.0nsupto100MHzclockfrequency –8.5nsupto87MHzclockfrequency ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritec | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportsfastaccesstimes: –7.5nsupto117MHzclockfrequency –8.0nsupto100MHzclockfrequency –8.5nsupto87MHzclockfrequency ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritec | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportsfastaccesstimes: –7.5nsupto117MHzclockfrequency –8.0nsupto100MHzclockfrequency –8.5nsupto87MHzclockfrequency ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritec | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportsfastaccesstimes: –7.5nsupto117MHzclockfrequency –8.0nsupto100MHzclockfrequency –8.5nsupto87MHzclockfrequency ◆LBOinputselectsinterleavedorlinearburstmode ◆Self-timedwritecyclewithglobalwritec | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
IDT71V67703S85BG产品属性
- 类型
描述
- 型号
IDT71V67703S85BG
- 功能描述
IC SRAM 9MBIT 85NS 119BGA
- RoHS
否
- 类别
集成电路(IC) >> 存储器
- 系列
-
- 标准包装
72
- 系列
- 格式 -
- 存储器
RAM
- 存储器类型
SRAM - 同步
- 存储容量
9M（256K x 36）
- 速度
75ns
- 接口
并联
- 电源电压
3.135 V ~ 3.465 V
- 工作温度
-40°C ~ 85°C
- 封装/外壳
100-LQFP
- 供应商设备封装
100-TQFP（14x14）
- 包装
托盘
- 其它名称
71V67703S75PFGI
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IDT |
21+ |
119PBGA (14x22) |
13880 |
公司只售原装,支持实单 |
|||
IDT |
23+ |
119BGA |
6000 |
原装正品，支持实单 |
|||
IDT |
22+23+ |
119BGA |
22387 |
绝对原装正品全新进口深圳现货 |
|||
IDT |
119BGA |
68900 |
原包原标签100%进口原装常备现货! |
||||
IDT |
22+ |
119PBGA (14x22) |
9000 |
原厂渠道,现货配单 |
|||
IDT |
23+ |
119BGA |
9526 |
||||
IDT |
23+ |
119-PBGA(14x22) |
36430 |
专业分销产品!原装正品!价格优势! |
|||
IDT |
22+ |
BGA |
5000 |
全新原装现货!自家库存! |
|||
IDT |
23+ |
BGA |
8230 |
全新原装真实库存含13点增值税票! |
|||
IDT |
23+ |
119-BGA |
6199 |
原装现货 |
IDT71V67703S85BG芯片相关品牌
IDT71V67703S85BG规格书下载地址
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