位置：首页 > IC中文资料第6752页 > IDT71V67603S150BQI
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  |   | |
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
IDT71V67603S150BQI产品属性
- 类型
描述
- 型号
IDT71V67603S150BQI
- 功能描述
IC SRAM 9MBIT 150MHZ 165FBGA
- RoHS
否
- 类别
集成电路(IC) >> 存储器
- 系列
-
- 标准包装
72
- 系列
- 格式 -
- 存储器
RAM
- 存储器类型
SRAM - 同步
- 存储容量
9M（256K x 36）
- 速度
75ns
- 接口
并联
- 电源电压
3.135 V ~ 3.465 V
- 工作温度
-40°C ~ 85°C
- 封装/外壳
100-LQFP
- 供应商设备封装
100-TQFP（14x14）
- 包装
托盘
- 其它名称
71V67703S75PFGI
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS(瑞萨)/IDT |
1921+ |
PBGA-119(14x22) |
3575 |
向鸿仓库现货,优势绝对的原装! |
|||
RENESAS(瑞萨)/IDT |
23+ |
PBGA119(14x22) |
6000 |
||||
RENESAS(瑞萨) |
23+ |
119-PBGA (14.00L X 22.00W X 1. |
10000 |
全新、原装 |
|||
Renesas |
23+ |
119-BGA |
7757 |
确保原装正品,一站式BOM配单 |
|||
RENESAS(瑞萨)/IDT |
2117+ |
PBGA-119(14x22) |
315000 |
84个/托盘一级代理专营品牌!原装正品,优势现货,长 |
|||
RENESAS(瑞萨电子) |
22+ |
NA |
500000 |
万三科技,秉承原装,购芯无忧 |
|||
Renesas Electronics America In |
24+ |
119-BGA |
9350 |
独立分销商,公司只做原装，诚心经营,免费试样正品保证 |
|||
IDT, Integrated Device Technol |
21+ |
119-PBGA(14x22) |
56200 |
一级代理/放心采购 |
|||
RENESAS(瑞萨)/IDT |
2021+ |
PBGA-119(14x22) |
499 |
||||
RENESAS(瑞萨)/IDT |
23+ |
PBGA119(14x22) |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
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