位置：首页 > IC中文资料第6752页 > IDT71V67603S133BQG
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IDT71V67603S133BQG | 256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect 文件：986.08 Kbytes Page：23 Pages | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 |  |   |
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect 文件：986.08 Kbytes Page：23 Pages | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | | |
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
256KX36,512KX183.3VSynchronousSRAMs3.3VI/O,BurstCounterPipelinedOutputs,SingleCycleDeselect Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighsystemspeed: –166MHz3.5nsclockaccesstime –150MHz3.8nsclockaccesstime –133MHz4.2nsclockaccesstime ◆Self-timedwritecyclewithglobalwritecontrol(GW),byte writeenable(BWE),andbytewrites(BWx) ◆L | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
IDT71V67603S133BQG产品属性
- 类型
描述
- 型号
IDT71V67603S133BQG
- 功能描述
IC SRAM 9MBIT 133MHZ 165FBGA
- RoHS
是
- 类别
集成电路(IC) >> 存储器
- 系列
-
- 标准包装
72
- 系列
- 格式 -
- 存储器
RAM
- 存储器类型
SRAM - 同步
- 存储容量
9M（256K x 36）
- 速度
75ns
- 接口
并联
- 电源电压
3.135 V ~ 3.465 V
- 工作温度
-40°C ~ 85°C
- 封装/外壳
100-LQFP
- 供应商设备封装
100-TQFP（14x14）
- 包装
托盘
- 其它名称
71V67703S75PFGI
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IDT |
1116+ |
BGA |
36 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IDT |
23+ |
BGA |
20000 |
原厂原装正品现货 |
|||
IDT |
21+ |
165CABGA (13x15) |
13880 |
公司只售原装,支持实单 |
|||
IDT |
23+ |
QFP100 |
7750 |
全新原装优势 |
|||
IDT/Integrated Device Technolo |
21+ |
BGA |
36 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IDT |
23+ |
165CABGA (13x15) |
9000 |
原装正品，支持实单 |
|||
IDT |
2016+ |
TQFP100 |
5562 |
只做进口原装现货!或订货!假一赔十! |
|||
IDT |
22+23+ |
TQFP100 |
13462 |
绝对原装正品全新进口深圳现货 |
|||
IDT |
22+ |
165CABGA (13x15) |
9000 |
原厂渠道,现货配单 |
|||
IDT |
23+ |
100TQFP |
9526 |
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IDT71V67603S133BQG规格书下载地址
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DdatasheetPDF页码索引
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