型号 功能描述 生产厂家&企业 LOGO 操作
IDT71V65903S85PFI

256Kx36,512Kx183.3VSynchronousZBTSRAMs

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IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT71V65903S85PFI

封装/外壳:100-LQFP 包装:卷带(TR) 描述:IC SRAM 9MBIT PARALLEL 100TQFP 集成电路(IC) 存储器

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

封装/外壳:100-LQFP 包装:卷带(TR) 描述:IC SRAM 9MBIT PARALLEL 100TQFP 集成电路(IC) 存储器

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

IDT71V65903S85PFI产品属性

  • 类型

    描述

  • 型号

    IDT71V65903S85PFI

  • 功能描述

    IC SRAM 9MBIT 85NS 100TQFP

  • RoHS

  • 类别

    集成电路(IC) >> 存储器

  • 系列

    -

  • 标准包装

    576

  • 系列

    - 格式 -

  • 存储器

    闪存

  • 存储器类型

    闪存 - NAND

  • 存储容量

    512M(64M x 8)

  • 速度

    -

  • 接口

    并联

  • 电源电压

    2.7 V ~ 3.6 V

  • 工作温度

    -40°C ~ 85°C

  • 封装/外壳

    48-TFSOP(0.724,18.40mm 宽)

  • 供应商设备封装

    48-TSOP

  • 包装

    托盘

  • 其它名称

    497-5040

更新时间:2024-4-29 21:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IDT, Integrated Device Technol
21+
100-TQFP(14x14)
56200
一级代理/放心采购
IDT
23+
NA/
88
优势代理渠道,原装正品,可全系列订货开增值税票
IDT
1525+
QFP100
30000
绝对原装进口环保现货可开17%增值税发票
IDT
2138+
BGA
8960
专营BGA,QFP原装现货,假一赔十
IDT
23+
100-TQFP(14x14)
1389
专业分销产品!原装正品!价格优势!
IDT
TQFP
265209
假一罚十原包原标签常备现货!
IDT
23+
NA
4865
中国航天工业部战略合作伙伴行业领导者
IDT
23+
QFP
9800
全新原装现货,假一赔十
IDT
23+
QFP
50000
全新原装正品现货,支持订货
IDT
22+
QFP
10000
原装正品优势现货供应

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