位置：首页 > IC中文资料第6688页 > IDT71V65903S85PFGI
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  |   | |
256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
IDT71V65903S85PFGI产品属性
- 类型
描述
- 型号
IDT71V65903S85PFGI
- 功能描述
IC SRAM 9MBIT 85NS 100TQFP
- RoHS
是
- 类别
集成电路(IC) >> 存储器
- 系列
-
- 标准包装
72
- 系列
- 格式 -
- 存储器
RAM
- 存储器类型
SRAM - 同步
- 存储容量
9M（256K x 36）
- 速度
75ns
- 接口
并联
- 电源电压
3.135 V ~ 3.465 V
- 工作温度
-40°C ~ 85°C
- 封装/外壳
100-LQFP
- 供应商设备封装
100-TQFP（14x14）
- 包装
托盘
- 其它名称
71V67703S75PFGI
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS(瑞萨)/IDT |
2021+ |
PBGA-119(14x22) |
499 |
||||
IDT |
22+ |
BGA |
25000 |
原装现货,价格优惠,假一罚十 |
|||
RENESAS(瑞萨)/IDT |
23+ |
PBGA119(14x22) |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
RENESAS(瑞萨)/IDT |
2117+ |
PBGA-119(14x22) |
315000 |
84个/托盘一级代理专营品牌!原装正品,优势现货,长 |
|||
Renesas Electronics America In |
24+ |
119-BGA |
9350 |
独立分销商,公司只做原装，诚心经营,免费试样正品保证 |
|||
RENESAS(瑞萨电子) |
22+ |
NA |
500000 |
万三科技,秉承原装,购芯无忧 |
|||
Renesas |
21+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
RENESAS(瑞萨) |
23+ |
119-PBGA (14.00L X 22.00W X 1. |
840 |
全新、原装 |
|||
IDT, Integrated Device Technol |
21+ |
63-VFBGA |
5280 |
进口原装!长期供应!绝对优势价格(诚信经营 |
|||
IDT |
1931+ |
N/A |
1186 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
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