位置：首页 > IC中文资料第6688页 > IDT71V65703S85PF
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IDT71V65703S85PF | 256Kx36,512Kx183.3VSynchronousZBTSRAMs 文件：504.78 Kbytes Page：26 Pages | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 |  |   |
IDT71V65703S85PF | 封装/外壳：100-LQFP 包装：卷带（TR） 描述：IC SRAM 9MBIT PARALLEL 100TQFP 集成电路（IC） 存储器 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | |
封装/外壳：100-LQFP 包装：卷带（TR） 描述：IC SRAM 9MBIT PARALLEL 100TQFP 集成电路（IC） 存储器 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
256Kx36,512Kx183.3VSynchronousZBTSRAMs 文件：504.78 Kbytes Page：26 Pages | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
IDT71V65703S85PF产品属性
- 类型
描述
- 型号
IDT71V65703S85PF
- 功能描述
IC SRAM 9MBIT 85NS 100TQFP
- RoHS
否
- 类别
集成电路(IC) >> 存储器
- 系列
-
- 标准包装
576
- 系列
- 格式 -
- 存储器
闪存
- 存储器类型
闪存 - NAND
- 存储容量
512M（64M x 8）
- 速度
-
- 接口
并联
- 电源电压
2.7 V ~ 3.6 V
- 工作温度
-40°C ~ 85°C
- 封装/外壳
48-TFSOP（0.724，18.40mm 宽）
- 供应商设备封装
48-TSOP
- 包装
托盘
- 其它名称
497-5040
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IDT |
23+ |
NA/ |
258 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IDT |
2016+ |
QFP |
6528 |
只做进口原装现货!或者订货,假一赔十! |
|||
IDT |
1525+ |
QFP100 |
30000 |
绝对原装进口环保现货可开17%增值税发票 |
|||
IDT |
23+ |
TQFP |
1008 |
全新原装现货 |
|||
IDT |
23+ |
100TQFP |
9526 |
||||
IDT |
2020+ |
QFP |
650 |
原装现货,优势渠道订货假一赔十 |
|||
IDT |
23+ |
100-TQFP(14x14) |
36430 |
专业分销产品!原装正品!价格优势! |
|||
IDT |
2021+ |
1931 |
只做原装假一罚十 |
||||
IDT/Integrated Device Technolo |
21+ |
QFP |
258 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IDT |
2309+ |
QFP |
8293 |
原装现货!随时可以看货!天天特价! |
IDT71V65703S85PF芯片相关品牌
IDT71V65703S85PF规格书下载地址
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DdatasheetPDF页码索引
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