位置：首页 > IC中文资料第6667页 > IDT71V65703S75PFG
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  |   | |
256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
IDT71V65703S75PFG产品属性
- 类型
描述
- 型号
IDT71V65703S75PFG
- 功能描述
IC SRAM 9MBIT 7.5NS 100TQFP
- RoHS
是
- 类别
集成电路(IC) >> 存储器
- 系列
-
- 标准包装
2,500
- 系列
- 格式 -
- 存储器
EEPROMs - 串行
- 存储器类型
EEPROM
- 存储容量
1K(128 x 8)
- 速度
100kHz
- 接口
UNI/O?（单线）
- 电源电压
1.8 V ~ 5.5 V
- 工作温度
-40°C ~ 85°C
- 封装/外壳
8-TSSOP，8-MSOP（0.118，3.00mm 宽）
- 供应商设备封装
8-MSOP
- 包装
带卷(TR)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS(瑞萨)/IDT |
1921+ |
PBGA-119(14x22) |
3575 |
向鸿仓库现货,优势绝对的原装! |
|||
Renesas |
23+ |
119-BGA |
11571 |
确保原装正品,一站式BOM配单 |
|||
IDT |
22+ |
BGA |
25000 |
原装现货,价格优惠,假一罚十 |
|||
RENESAS(瑞萨)/IDT |
23+ |
PBGA119(14x22) |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
IDT, Integrated Device Technol |
21+ |
60-TFBGA |
5280 |
进口原装!长期供应!绝对优势价格(诚信经营 |
|||
RENESAS(瑞萨)/IDT |
2021+ |
PBGA-119(14x22) |
499 |
||||
RENESAS(瑞萨)/IDT |
2117+ |
PBGA-119(14x22) |
315000 |
84个/托盘一级代理专营品牌!原装正品,优势现货,长 |
|||
RENESAS(瑞萨) |
23+ |
119-PBGA (14.00L X 22.00W X 1. |
10000 |
全新、原装 |
|||
IDT |
1931+ |
N/A |
1186 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
|||
IDT |
22+ |
NA |
1186 |
加我QQ或微信咨询更多详细信息, |
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DdatasheetPDF页码索引
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