位置：首页 > IC中文资料第402页 > IDT71V124SA10
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IDT71V124SA10 | 3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 |  |   |
3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
封装/外壳：32-SOIC（0.400"，10.16mm 宽） 包装：管件 描述：IC SRAM 1MBIT PARALLEL 32TSOP II 集成电路（IC） 存储器 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | | |
封装/外壳：32-BSOJ（0.300"，7.62mm 宽） 包装：管件 描述：IC SRAM 1MBIT PARALLEL 32SOJ 集成电路（IC） 存储器 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
IDT71V124SA10产品属性
- 类型
描述
- 型号
IDT71V124SA10
- 功能描述
IC SRAM 1MBIT 10NS 32TSOP
- RoHS
否
- 类别
集成电路(IC) >> 存储器
- 系列
-
- 产品变化通告
Product Discontinuation 05/Nov/2008
- 标准包装
84
- 系列
- 格式 -
- 存储器
RAM
- 存储器类型
SRAM - 同步 ZBT
- 存储容量
4.5M（128K x 36）
- 速度
75ns
- 接口
并联
- 电源电压
3.135 V ~ 3.465 V
- 工作温度
-40°C ~ 85°C
- 封装/外壳
119-BGA
- 供应商设备封装
119-PBGA（14x22）
- 包装
托盘
- 其它名称
71V3557SA75BGI
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IDT |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
|||
IDT |
23+ |
SOP-32 |
9526 |
||||
IDT |
21+ |
SOP |
11000 |
只做正品原装现货 |
|||
IDT |
21+ |
SOJ-32 |
50000 |
全新原装正品现货,支持订货 |
|||
N/A |
2122+ |
9880 |
全新原装正品现货,优势渠道可含税,假一赔十 |
||||
IDT |
22+ |
TSOP |
9600 |
原装现货,优势供应,支持实单! |
|||
IDTPb |
21+ |
SOJ |
12588 |
原装正品,自己库存 假一罚十 |
|||
IDT |
23+ |
SOP |
3 |
只做原装全系列供应价格优势 |
|||
IDT |
00+ |
1951 |
优势货源原装正品 |
||||
IDT |
21+ |
SOJ32 |
10000 |
原装现货假一罚十 |
IDT71V124SA10芯片相关品牌
IDT71V124SA10规格书下载地址
IDT71V124SA10参数引脚图相关
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