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位置：首页 > IC中文资料第383页 > IDT70824L

型号 功能描述 生产厂家&企业 LOGO 操作
IDT70824L

HIGH-SPEED4KX16SEQUENTIALACCESSRANDOMACCESSMEMORY(SARAM??

Description TheIDT70824isahigh-speed4Kx16-BitSequentialAccessRandomAccessMemory(SARAM). Features ◆High-speedaccess –Military:35/45ns(max.) –Commercial:20/25/35/45ns(max.) ◆Low-poweroperation –IDT70824S Active:775mW(typ.) Standby:5mW(typ.)

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT70824L20G

HIGH-SPEED4KX16SEQUENTIALACCESSRANDOMACCESSMEMORY(SARAM??

Description TheIDT70824isahigh-speed4Kx16-BitSequentialAccessRandomAccessMemory(SARAM). Features ◆High-speedaccess –Military:35/45ns(max.) –Commercial:20/25/35/45ns(max.) ◆Low-poweroperation –IDT70824S Active:775mW(typ.) Standby:5mW(typ.)

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT70824L20GB

HIGH-SPEED4KX16SEQUENTIALACCESSRANDOMACCESSMEMORY(SARAM??

Description TheIDT70824isahigh-speed4Kx16-BitSequentialAccessRandomAccessMemory(SARAM). Features ◆High-speedaccess –Military:35/45ns(max.) –Commercial:20/25/35/45ns(max.) ◆Low-poweroperation –IDT70824S Active:775mW(typ.) Standby:5mW(typ.)

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT70824L20GI

HIGH-SPEED4KX16SEQUENTIALACCESSRANDOMACCESSMEMORY(SARAM??

Description TheIDT70824isahigh-speed4Kx16-BitSequentialAccessRandomAccessMemory(SARAM). Features ◆High-speedaccess –Military:35/45ns(max.) –Commercial:20/25/35/45ns(max.) ◆Low-poweroperation –IDT70824S Active:775mW(typ.) Standby:5mW(typ.)

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT70824L20PF

HIGH-SPEED4KX16SEQUENTIALACCESSRANDOMACCESSMEMORY(SARAM??

Description TheIDT70824isahigh-speed4Kx16-BitSequentialAccessRandomAccessMemory(SARAM). Features ◆High-speedaccess –Military:35/45ns(max.) –Commercial:20/25/35/45ns(max.) ◆Low-poweroperation –IDT70824S Active:775mW(typ.) Standby:5mW(typ.)

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT70824L20PFB

HIGH-SPEED4KX16SEQUENTIALACCESSRANDOMACCESSMEMORY(SARAM??

Description TheIDT70824isahigh-speed4Kx16-BitSequentialAccessRandomAccessMemory(SARAM). Features ◆High-speedaccess –Military:35/45ns(max.) –Commercial:20/25/35/45ns(max.) ◆Low-poweroperation –IDT70824S Active:775mW(typ.) Standby:5mW(typ.)

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT70824L20PFI

HIGH-SPEED4KX16SEQUENTIALACCESSRANDOMACCESSMEMORY(SARAM??

Description TheIDT70824isahigh-speed4Kx16-BitSequentialAccessRandomAccessMemory(SARAM). Features ◆High-speedaccess –Military:35/45ns(max.) –Commercial:20/25/35/45ns(max.) ◆Low-poweroperation –IDT70824S Active:775mW(typ.) Standby:5mW(typ.)

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT70824L25G

HIGH-SPEED4KX16SEQUENTIALACCESSRANDOMACCESSMEMORY(SARAM??

Description TheIDT70824isahigh-speed4Kx16-BitSequentialAccessRandomAccessMemory(SARAM). Features ◆High-speedaccess –Military:35/45ns(max.) –Commercial:20/25/35/45ns(max.) ◆Low-poweroperation –IDT70824S Active:775mW(typ.) Standby:5mW(typ.)

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT70824L25GB

HIGH-SPEED4KX16SEQUENTIALACCESSRANDOMACCESSMEMORY(SARAM??

Description TheIDT70824isahigh-speed4Kx16-BitSequentialAccessRandomAccessMemory(SARAM). Features ◆High-speedaccess –Military:35/45ns(max.) –Commercial:20/25/35/45ns(max.) ◆Low-poweroperation –IDT70824S Active:775mW(typ.) Standby:5mW(typ.)

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT70824L25GI

HIGH-SPEED4KX16SEQUENTIALACCESSRANDOMACCESSMEMORY(SARAM??

Description TheIDT70824isahigh-speed4Kx16-BitSequentialAccessRandomAccessMemory(SARAM). Features ◆High-speedaccess –Military:35/45ns(max.) –Commercial:20/25/35/45ns(max.) ◆Low-poweroperation –IDT70824S Active:775mW(typ.) Standby:5mW(typ.)

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT70824L25PF

HIGH-SPEED4KX16SEQUENTIALACCESSRANDOMACCESSMEMORY(SARAM??

Description TheIDT70824isahigh-speed4Kx16-BitSequentialAccessRandomAccessMemory(SARAM). Features ◆High-speedaccess –Military:35/45ns(max.) –Commercial:20/25/35/45ns(max.) ◆Low-poweroperation –IDT70824S Active:775mW(typ.) Standby:5mW(typ.)

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT70824L25PFB

HIGH-SPEED4KX16SEQUENTIALACCESSRANDOMACCESSMEMORY(SARAM??

Description TheIDT70824isahigh-speed4Kx16-BitSequentialAccessRandomAccessMemory(SARAM). Features ◆High-speedaccess –Military:35/45ns(max.) –Commercial:20/25/35/45ns(max.) ◆Low-poweroperation –IDT70824S Active:775mW(typ.) Standby:5mW(typ.)

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT70824L25PFI

HIGH-SPEED4KX16SEQUENTIALACCESSRANDOMACCESSMEMORY(SARAM??

Description TheIDT70824isahigh-speed4Kx16-BitSequentialAccessRandomAccessMemory(SARAM). Features ◆High-speedaccess –Military:35/45ns(max.) –Commercial:20/25/35/45ns(max.) ◆Low-poweroperation –IDT70824S Active:775mW(typ.) Standby:5mW(typ.)

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT70824L35G

HIGH-SPEED4KX16SEQUENTIALACCESSRANDOMACCESSMEMORY(SARAM??

Description TheIDT70824isahigh-speed4Kx16-BitSequentialAccessRandomAccessMemory(SARAM). Features ◆High-speedaccess –Military:35/45ns(max.) –Commercial:20/25/35/45ns(max.) ◆Low-poweroperation –IDT70824S Active:775mW(typ.) Standby:5mW(typ.)

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT70824L35GB

HIGH-SPEED4KX16SEQUENTIALACCESSRANDOMACCESSMEMORY(SARAM??

Description TheIDT70824isahigh-speed4Kx16-BitSequentialAccessRandomAccessMemory(SARAM). Features ◆High-speedaccess –Military:35/45ns(max.) –Commercial:20/25/35/45ns(max.) ◆Low-poweroperation –IDT70824S Active:775mW(typ.) Standby:5mW(typ.)

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT70824L35GI

HIGH-SPEED4KX16SEQUENTIALACCESSRANDOMACCESSMEMORY(SARAM??

Description TheIDT70824isahigh-speed4Kx16-BitSequentialAccessRandomAccessMemory(SARAM). Features ◆High-speedaccess –Military:35/45ns(max.) –Commercial:20/25/35/45ns(max.) ◆Low-poweroperation –IDT70824S Active:775mW(typ.) Standby:5mW(typ.)

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT70824L35PF

HIGH-SPEED4KX16SEQUENTIALACCESSRANDOMACCESSMEMORY(SARAM??

Description TheIDT70824isahigh-speed4Kx16-BitSequentialAccessRandomAccessMemory(SARAM). Features ◆High-speedaccess –Military:35/45ns(max.) –Commercial:20/25/35/45ns(max.) ◆Low-poweroperation –IDT70824S Active:775mW(typ.) Standby:5mW(typ.)

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT70824L35PFB

HIGH-SPEED4KX16SEQUENTIALACCESSRANDOMACCESSMEMORY(SARAM??

Description TheIDT70824isahigh-speed4Kx16-BitSequentialAccessRandomAccessMemory(SARAM). Features ◆High-speedaccess –Military:35/45ns(max.) –Commercial:20/25/35/45ns(max.) ◆Low-poweroperation –IDT70824S Active:775mW(typ.) Standby:5mW(typ.)

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT70824L35PFI

HIGH-SPEED4KX16SEQUENTIALACCESSRANDOMACCESSMEMORY(SARAM??

Description TheIDT70824isahigh-speed4Kx16-BitSequentialAccessRandomAccessMemory(SARAM). Features ◆High-speedaccess –Military:35/45ns(max.) –Commercial:20/25/35/45ns(max.) ◆Low-poweroperation –IDT70824S Active:775mW(typ.) Standby:5mW(typ.)

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT70824L45G

HIGH-SPEED4KX16SEQUENTIALACCESSRANDOMACCESSMEMORY(SARAM??

Description TheIDT70824isahigh-speed4Kx16-BitSequentialAccessRandomAccessMemory(SARAM). Features ◆High-speedaccess –Military:35/45ns(max.) –Commercial:20/25/35/45ns(max.) ◆Low-poweroperation –IDT70824S Active:775mW(typ.) Standby:5mW(typ.)

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT70824L45GB

HIGH-SPEED4KX16SEQUENTIALACCESSRANDOMACCESSMEMORY(SARAM??

Description TheIDT70824isahigh-speed4Kx16-BitSequentialAccessRandomAccessMemory(SARAM). Features ◆High-speedaccess –Military:35/45ns(max.) –Commercial:20/25/35/45ns(max.) ◆Low-poweroperation –IDT70824S Active:775mW(typ.) Standby:5mW(typ.)

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT70824L45GI

HIGH-SPEED4KX16SEQUENTIALACCESSRANDOMACCESSMEMORY(SARAM??

Description TheIDT70824isahigh-speed4Kx16-BitSequentialAccessRandomAccessMemory(SARAM). Features ◆High-speedaccess –Military:35/45ns(max.) –Commercial:20/25/35/45ns(max.) ◆Low-poweroperation –IDT70824S Active:775mW(typ.) Standby:5mW(typ.)

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT70824L45PF

HIGH-SPEED4KX16SEQUENTIALACCESSRANDOMACCESSMEMORY(SARAM??

Description TheIDT70824isahigh-speed4Kx16-BitSequentialAccessRandomAccessMemory(SARAM). Features ◆High-speedaccess –Military:35/45ns(max.) –Commercial:20/25/35/45ns(max.) ◆Low-poweroperation –IDT70824S Active:775mW(typ.) Standby:5mW(typ.)

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT70824L45PFB

HIGH-SPEED4KX16SEQUENTIALACCESSRANDOMACCESSMEMORY(SARAM??

Description TheIDT70824isahigh-speed4Kx16-BitSequentialAccessRandomAccessMemory(SARAM). Features ◆High-speedaccess –Military:35/45ns(max.) –Commercial:20/25/35/45ns(max.) ◆Low-poweroperation –IDT70824S Active:775mW(typ.) Standby:5mW(typ.)

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT70824L45PFI

HIGH-SPEED4KX16SEQUENTIALACCESSRANDOMACCESSMEMORY(SARAM??

Description TheIDT70824isahigh-speed4Kx16-BitSequentialAccessRandomAccessMemory(SARAM). Features ◆High-speedaccess –Military:35/45ns(max.) –Commercial:20/25/35/45ns(max.) ◆Low-poweroperation –IDT70824S Active:775mW(typ.) Standby:5mW(typ.)

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT70824L20PF

封装/外壳：80-LQFP 包装：卷带（TR） 描述：IC RAM 64KBIT PARALLEL 80TQFP 集成电路（IC） 存储器

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
IDT70824L20PF8

封装/外壳：80-LQFP 包装：卷带（TR） 描述：IC RAM 64KBIT PARALLEL 80TQFP 集成电路（IC） 存储器

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
IDT70824S

HIGH-SPEED4KX16SEQUENTIALACCESSRANDOMACCESSMEMORY(SARAM??

Description TheIDT70824isahigh-speed4Kx16-BitSequentialAccessRandomAccessMemory(SARAM). Features ◆High-speedaccess –Military:35/45ns(max.) –Commercial:20/25/35/45ns(max.) ◆Low-poweroperation –IDT70824S Active:775mW(typ.) Standby:5mW(typ.)

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

IDT70824L产品属性

  • 类型

    描述

  • 型号

    IDT70824L

  • 功能描述

    IC SARAM 64KBIT 20NS 84PGA

  • RoHS

    否

  • 类别

    集成电路(IC) >> 存储器

  • 系列

    -

  • 产品变化通告

    Product Discontinuation 26/Apr/2010

  • 标准包装

    136

  • 系列

    - 格式 -

  • 存储器

    RAM

  • 存储器类型

    SRAM - 同步，DDR II

  • 存储容量

    18M（1M x 18）

  • 速度

    200MHz

  • 接口

    并联

  • 电源电压

    1.7 V ~ 1.9 V

  • 工作温度

    0°C ~ 70°C

  • 封装/外壳

    165-TBGA

  • 供应商设备封装

    165-CABGA（13x15）

  • 包装

    托盘

  • 其它名称

    71P71804S200BQ

IDT70824L供应商更多...

更新时间：2024-5-20 18:23:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市科芯源微电子有限公司
IDT70824L35PF
IDT
23+
QFP-80
56248
全新原厂原装正品现货,可提供技术支持、样品免费!
询价
华富测量(深圳)传感技术有限公司
IDT70824L25PF
IDT
2138+
QFP
8960
专营BGA,QFP原装现货,假一赔十
询价
深圳市芯福林电子科技有限公司
IDT70824L35PF
IDT
21+
80TQFP
13880
公司只售原装,支持实单
询价
深圳市恒达亿科技有限公司
IDT70824L25PF
IDT
23+
QFP80
3200
全新原装、诚信经营、公司现货销售
询价
深圳市昌和盛利电子有限公司
IDT70824L20G
IDT
23+
84PGA
9526
询价
深圳市恒佳微电子有限公司
IDT70824L35PF
IDT
2021+
QFP
3628
十年专营原装现货,假一赔十
询价
深圳市毅创腾电子科技有限公司
IDT70824L25PF
IDT
23+
80-TQFP(14x14)
71890
专业分销产品!原装正品!价格优势!
询价
易创佳业科技（深圳）有限公司
IDT70824L35PF
IDT
23+
80TQFP
9000
原装正品，支持实单
询价
深圳市英科美电子有限公司
IDT70824L35PF
IDT
2021+
QFP
5228
只做原装假一罚十
询价
深圳市向鸿伟业电子有限公司
IDT70824L25PF
IDT
13+
NA
2630
只有原装!只做原装!一片起卖!
询价

IDT70824L芯片相关品牌

  • AAC
  • AITSEMI
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  • BITECH
  • DBLECTRO
  • HUAXINAN
  • MOLEX3
  • Nuvoton
  • OSRAM
  • RECOM
  • SIEMENS
  • WILLOW

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