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位置：首页 > IC中文资料第8926页 > IDT6116

型号 功能描述 生产厂家&企业 LOGO 操作
IDT6116LA

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT6116LA120DB

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT6116LA120TDB

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT6116LA150DB

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT6116LA20P

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT6116LA20PI

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT6116LA20SO

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT6116LA20SOI

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT6116LA20TDB

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT6116LA20TP

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT6116LA20TPI

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT6116LA20Y

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT6116LA20YI

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT6116LA25P

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT6116LA25PI

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT6116LA25SO

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT6116LA25SOI

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT6116LA25TDB

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT6116LA25TP

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT6116LA25TPI

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT6116LA25Y

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT6116LA25YI

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT6116LA35P

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT6116LA35PI

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT6116LA35SO

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT6116LA35SOI

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT6116LA35TDB

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT6116LA35TP

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT6116LA35TPI

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT6116LA35Y

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT6116LA35YI

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT6116LA45DB

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT6116LA45P

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT6116LA45PI

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT6116LA45SO

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT6116LA45SOI

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT6116LA45TDB

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT6116LA45TP

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT6116LA45TPI

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT6116LA45Y

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT6116LA45YI

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT6116LA55DB

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT6116LA55TDB

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT6116LA70DB

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT6116LA70TDB

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT6116LA90DB

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT6116LA90TDB

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT6116SA

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT6116SA120DB

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT6116SA120TDB

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT6116SA150DB

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT6116SA15P

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT6116SA15SO

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT6116SA15TP

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT6116SA15Y

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT6116SA20P

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT6116SA20PI

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT6116SA20SO

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT6116SA20SOI

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
IDT6116SA20TDB

CMOSSTATICRAM16K(2Kx8BIT)

DESCRIPTION: TheIDT6116SA/LAisa16,384-bithigh-speedstaticRAMorganizedas2Kx8.ItisfabricatedusingIDTshigh-performance,high-reliabilityCMOStechnology. FEATURES: •High-speedaccessandchipselecttimes —Military:20/25/35/45/55/70/90/120/150ns(max.) —Commerc

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

IDT6116产品属性

  • 类型

    描述

  • 型号

    IDT6116

  • 制造商

    IDT

  • 制造商全称

    Integrated Device Technology

  • 功能描述

    CMOS STATIC RAM 16K(2K x 8 BIT)

IDT6116供应商更多...

更新时间：2024-4-27 8:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市永贝尔科技有限公司
IDT6116LA45TDB
IDT
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
深圳市得捷芯城科技有限公司
IDT6116LA45TP
IDT
23+
NA/
617
优势代理渠道,原装正品,可全系列订货开增值税票
询价
深圳市博浩通科技有限公司
IDT6116LA45TDB
IDT
23+
DIP24
1005
特价库存
询价
深圳市金嘉锐电子有限公司
IDT6116LA45TP
IDT
24+
原厂原装
16000
原装优势绝对有货
询价
深圳市英科美电子有限公司
IDT6116LA45TP
IDT
2021+
DIP
6017
百分百原装正品
询价
深圳市昌和盛利电子有限公司
IDT6116LA45TDB
IDT
23+
24300MILCERD
9526
询价
深圳市毅创腾电子科技有限公司
IDT6116LA45TP
IDT
23+
24-PDIP
1389
专业分销产品!原装正品!价格优势!
询价
深圳市佳鑫美电子科技有限公司
IDT6116LA45TP
IDT
22+
DIP
2650
原装优势!绝对公司现货
询价
深圳市汇莱威科技有限公司
IDT6116LA45TP
IDT
DIP
265209
假一罚十原包原标签常备现货!
询价
易创佳业科技（深圳）有限公司
IDT6116LA45TP
IDT
23+
24PDIP
9000
原装正品，支持实单
询价

IDT6116芯片相关品牌

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  • SSDI
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IDT6116规格书下载地址

IDT6116参数引脚图相关

IDT6116数据表相关新闻

DdatasheetPDF页码索引

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