650VSiCthinQ!??Generation5diodes

Features ■V₂at650V ImprovedFigureofMerit(QxV) ■Noreverserecoverycharge ■Softswitchingreverse recoverywaveform ■Temperatureindependent switchingbehavior Highoperatingtemperature (₁175°C) ■Improvedsurgecapability ■Pb-freeleadplating ☐10yearsmanufacturingof

封装/外壳：TO-220-2 包装：散装 描述：DIODE SCHOTTKY 650V 10A TO220-2 分立半导体产品 二极管 - 整流器 - 单

包装：散装 描述：DIODE SCHOTTKY 650V 10A TO220-2 分立半导体产品 二极管 - 整流器 - 单

650VSiCthinQ!??Generation5diodes

Features ■V₂at650V ImprovedFigureofMerit(QxV) ■Noreverserecoverycharge ■Softswitchingreverse recoverywaveform ■Temperatureindependent switchingbehavior Highoperatingtemperature (₁175°C) ■Improvedsurgecapability ■Pb-freeleadplating ☐10yearsmanufacturingof

650VSiCthinQ!??Generation5diodes

Features ■V₂at650V ImprovedFigureofMerit(QxV) ■Noreverserecoverycharge ■Softswitchingreverse recoverywaveform ■Temperatureindependent switchingbehavior Highoperatingtemperature (₁175°C) ■Improvedsurgecapability ■Pb-freeleadplating ☐10yearsmanufacturingof

5thGenerationthinQ!TM650VSiCSchottkyDiode

1Description Features Revolutionarysemiconductormaterial-SiliconCarbide Benchmarkswitchingbehavior Noreverserecovery/Noforwardrecovery Temperatureindependentswitchingbehavior Highsurgecurrentcapability Pb-freeleadplating;RoHScompliant Qualifiedaccordin

SiliconCarbideDiode

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