型号 功能描述 生产厂家&企业 LOGO 操作
IC42S16800

4(2)Mx8(16)Bitsx4Banks(128-MBIT)SYNCHRONOUSDYNAMICRAM

DESCRIPTION TheIC42S81600andIC42S16800arehigh-speed134,217,728-bitsynchronousdynamicrandomaccessmemories,organizedas4,194,304x8x4and2,097,152x16x4(wordxbitxbank),respectively. FEATURES •Single3.3V(±0.3V)powersupply •Highspeedclockcycletime-6:166MHz,-7

ICSI

矽成

ICSI

4(2)Mx8(16)Bitsx4Banks(128-MBIT)SYNCHRONOUSDYNAMICRAM

DESCRIPTION TheIC42S81600andIC42S16800arehigh-speed134,217,728-bitsynchronousdynamicrandomaccessmemories,organizedas4,194,304x8x4and2,097,152x16x4(wordxbitxbank),respectively. FEATURES •Single3.3V(±0.3V)powersupply •Highspeedclockcycletime-6:166MHz,-7

ICSI

矽成

ICSI

4(2)Mx8(16)Bitsx4Banks(128-MBIT)SYNCHRONOUSDYNAMICRAM

DESCRIPTION TheIC42S81600andIC42S16800arehigh-speed134,217,728-bitsynchronousdynamicrandomaccessmemories,organizedas4,194,304x8x4and2,097,152x16x4(wordxbitxbank),respectively. FEATURES •Single3.3V(±0.3V)powersupply •Highspeedclockcycletime-6:166MHz,-7

ICSI

矽成

ICSI

4(2)Mx8(16)Bitsx4Banks(128-MBIT)SYNCHRONOUSDYNAMICRAM

DESCRIPTION TheIC42S81600andIC42S16800arehigh-speed134,217,728-bitsynchronousdynamicrandomaccessmemories,organizedas4,194,304x8x4and2,097,152x16x4(wordxbitxbank),respectively. FEATURES •Single3.3V(±0.3V)powersupply •Highspeedclockcycletime-6:166MHz,-7

ICSI

矽成

ICSI

4(2)Mx8(16)Bitsx4Banks(128-MBIT)SYNCHRONOUSDYNAMICRAM

DESCRIPTION TheIC42S81600andIC42S16800arehigh-speed134,217,728-bitsynchronousdynamicrandomaccessmemories,organizedas4,194,304x8x4and2,097,152x16x4(wordxbitxbank),respectively. FEATURES •Single3.3V(±0.3V)powersupply •Highspeedclockcycletime-6:166MHz,-7

ICSI

矽成

ICSI

4(2)Mx8(16)Bitsx4Banks(128-MBIT)SYNCHRONOUSDYNAMICRAM

DESCRIPTION TheIC42S81600andIC42S16800arehigh-speed134,217,728-bitsynchronousdynamicrandomaccessmemories,organizedas4,194,304x8x4and2,097,152x16x4(wordxbitxbank),respectively. FEATURES •Single3.3V(±0.3V)powersupply •Highspeedclockcycletime-6:166MHz,-7

ICSI

矽成

ICSI

4(2)Mx8(16)Bitsx4Banks(128-MBIT)SYNCHRONOUSDYNAMICRAM

DESCRIPTION TheIC42S81600andIC42S16800arehigh-speed134,217,728-bitsynchronousdynamicrandomaccessmemories,organizedas4,194,304x8x4and2,097,152x16x4(wordxbitxbank),respectively. FEATURES •Single3.3V(±0.3V)powersupply •Highspeedclockcycletime-6:166MHz,-7

ICSI

矽成

ICSI

16Megx8,8Megx16128-MBITSYNCHRONOUSDRAM

OVERVIEW ISSIs128MbSynchronousDRAMachieveshigh-speeddatatransferusingpipelinearchitecture.Allinputsandoutputssignalsrefertotherisingedgeoftheclockinput.The128MbSDRAMisorganizedasfollows. FEATURES •Clockfrequency:166,143,133MHz •Fullysynchronous;allsignal

ISSIIntegrated Silicon Solution Inc

ISSI公司ISSI有限公司

ISSI

4(2)Mx8(16)Bitsx4Banks(128-MBIT)SYNCHRONOUSDYNAMICRAM

DESCRIPTION TheIC42S81600andIC42S16800arehigh-speed134,217,728-bitsynchronousdynamicrandomaccessmemories,organizedas4,194,304x8x4and2,097,152x16x4(wordxbitxbank),respectively. FEATURES •Single3.3V(±0.3V)powersupply •Highspeedclockcycletime-6:166MHz,-7

ICSI

矽成

ICSI

4(2)Mx8(16)Bitsx4Banks(128-MBIT)SYNCHRONOUSDYNAMICRAM

DESCRIPTION TheIC42S81600andIC42S16800arehigh-speed134,217,728-bitsynchronousdynamicrandomaccessmemories,organizedas4,194,304x8x4and2,097,152x16x4(wordxbitxbank),respectively. FEATURES •Single3.3V(±0.3V)powersupply •Highspeedclockcycletime-6:166MHz,-7

ICSI

矽成

ICSI

4(2)Mx8(16)Bitsx4Banks(128-MBIT)SYNCHRONOUSDYNAMICRAM

DESCRIPTION TheIC42S81600andIC42S16800arehigh-speed134,217,728-bitsynchronousdynamicrandomaccessmemories,organizedas4,194,304x8x4and2,097,152x16x4(wordxbitxbank),respectively. FEATURES •Single3.3V(±0.3V)powersupply •Highspeedclockcycletime-6:166MHz,-7

ICSI

矽成

ICSI

4(2)Mx8(16)Bitsx4Banks(128-MBIT)SYNCHRONOUSDYNAMICRAM

DESCRIPTION TheIC42S81600andIC42S16800arehigh-speed134,217,728-bitsynchronousdynamicrandomaccessmemories,organizedas4,194,304x8x4and2,097,152x16x4(wordxbitxbank),respectively. FEATURES •Single3.3V(±0.3V)powersupply •Highspeedclockcycletime-6:166MHz,-7

ICSI

矽成

ICSI

4(2)Mx8(16)Bitsx4Banks(128-MBIT)SYNCHRONOUSDYNAMICRAM

DESCRIPTION TheIC42S81600andIC42S16800arehigh-speed134,217,728-bitsynchronousdynamicrandomaccessmemories,organizedas4,194,304x8x4and2,097,152x16x4(wordxbitxbank),respectively. FEATURES •Single3.3V(±0.3V)powersupply •Highspeedclockcycletime-6:166MHz,-7

ICSI

矽成

ICSI

4(2)Mx8(16)Bitsx4Banks(128-MBIT)SYNCHRONOUSDYNAMICRAM

DESCRIPTION TheIC42S81600andIC42S16800arehigh-speed134,217,728-bitsynchronousdynamicrandomaccessmemories,organizedas4,194,304x8x4and2,097,152x16x4(wordxbitxbank),respectively. FEATURES •Single3.3V(±0.3V)powersupply •Highspeedclockcycletime-6:166MHz,-7

ICSI

矽成

ICSI

4(2)Mx8(16)Bitsx4Banks(128-MBIT)SYNCHRONOUSDYNAMICRAM

DESCRIPTION TheIC42S81600andIC42S16800arehigh-speed134,217,728-bitsynchronousdynamicrandomaccessmemories,organizedas4,194,304x8x4and2,097,152x16x4(wordxbitxbank),respectively. FEATURES •Single3.3V(±0.3V)powersupply •Highspeedclockcycletime-6:166MHz,-7

ICSI

矽成

ICSI

3.3VOPERATION16M-BITDYNAMICRAM2M-WORDBY8-BIT,FASTPAGEMODE

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

16Megx8,8Megx16&4Megx32128-MBITSYNCHRONOUSDRAM

文件:540.49 Kbytes Page:61 Pages

ISSIIntegrated Silicon Solution Inc

ISSI公司ISSI有限公司

ISSI

16Megx8,8Megx16&4Megx32128-MBITSYNCHRONOUSDRAM

文件:556.97 Kbytes Page:66 Pages

ICSI

矽成

ICSI

IC42S16800产品属性

  • 类型

    描述

  • 型号

    IC42S16800

  • 制造商

    ICSI

  • 制造商全称

    Integrated Circuit Solution Inc

  • 功能描述

    4(2)M x 8(16) Bits x 4 Banks(128-MBIT) SYNCHRONOUS DYNAMIC RAM

更新时间:2024-5-17 23:14:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ICSI
20+
TSOP
67500
原装优势主营型号-可开原型号增税票
ISSI
2016+
TSOP54
3500
只做原装,假一罚十,公司可开17%增值税发票!
ICSI
23+
TSOP
20000
全新原装假一赔十
ISSI
2020+
TSOP
8000
只做自己库存,全新原装进口正品假一赔百,可开13%增
ISSI
24+
TSOP54
98000
全新原厂原装正品现货,可提供技术支持、样品免费!
PHI
23+
TQFP32P
18000
ISSI
三年内
1983
纳立只做原装正品13590203865
NEC
22+
QFP
6980
原装现货,可开13%税票
INTEGRATEDS
23+
原厂封装
9888
专做原装正品,假一罚百!
ISSI
24+
BGA
161663
明嘉莱只做原装正品现货

IC42S16800芯片相关品牌

  • DATADELAY
  • Fujitsu
  • Hittite
  • JHE
  • Lattice
  • Microsemi
  • MOLEX10
  • NUMONYX
  • SHARMA
  • TI1
  • Vitec
  • ZSELEC

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