| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HMET18125 | PAINTEDTEXTUREDGRAYRAL7035 文件：120.25 Kbytes Page：1 Pages | HAMMOND Hammond Manufacturing Ltd. |  |   |
HMET18125 | Armoireautoportantemodulairea2portesenacierdouxdetype12 文件：114.63 Kbytes Page：3 Pages | HAMMOND Hammond Manufacturing Ltd. | | |
HMET18125 | 包装：盒 描述：MODULAR DBL DOOR ENCL 盒子，外壳，机架 机架 | Hammond Manufacturing Hammond Manufacturing |  | |
HMET18125 | 包装：盒 描述：MODULAR DBL DOOR ENCL 盒子，外壳，机架 机架 | Hammond Manufacturing Hammond Manufacturing | | |
125W,1.805GHz-1.880GHz,LDMOSRFPowerTransistor Introduction TheAGR18125Eisa125W,26V,N-channelgold-metallized,laterallydiffusedmetaloxidesemiconductor(LDMOS)RFpowerfieldeffecttransistor(FET)suitableforglobalsystemformobilecommunication(GSM),enhanceddataforglobalevolution(EDGE),andmulti-carrierclassABpowe | TriQuint TriQuint Semiconductor |  | | |
125W,1.805GHz-1.880GHz,LDMOSRFPowerTransistor Introduction TheAGR18125Eisa125W,26V,N-channelgold-metallized,laterallydiffusedmetaloxidesemiconductor(LDMOS)RFpowerfieldeffecttransistor(FET)suitableforglobalsystemformobilecommunication(GSM),enhanceddataforglobalevolution(EDGE),andmulti-carrierclassABpowe | TriQuint TriQuint Semiconductor | | | |
125W,1.805GHz-1.880GHz,LDMOSRFPowerTransistor Introduction TheAGR18125Eisa125W,26V,N-channelgold-metallized,laterallydiffusedmetaloxidesemiconductor(LDMOS)RFpowerfieldeffecttransistor(FET)suitableforglobalsystemformobilecommunication(GSM),enhanceddataforglobalevolution(EDGE),andmulti-carrierclassABpowe | TriQuint TriQuint Semiconductor | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Hammond |
2020+ |
N/A |
155 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
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Hammond |
22+ |
NA |
155 |
加我QQ或微信咨询更多详细信息, |
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