NPNEPITAXIALPLANARTRANSISTOR

Description TheHM6718isdesignedforgeneralpurposemediumpoweramplifierandswitching. Features •Highpower:1W •Highcurrent:1A

CustomerSpecification

Construction 1)Component11X1HOOKUP a)Conductor12(65/30)AWGTinnedCopper0.093 b)Insulation0.012Wall,Nom.MPPE0.117+/-0.002 (1)Print ALPHAWIREECOWIRETM12AWGE163869-DB RUAWM11028105C600VVW-1---CRUAWMIA/B 105C600VFT1CEROHS (2)Color(s) WHITE,BLACK

HighCurrentToroidInductors(withheader)

SpecialFeatures •Lowradiation •Highcurrentcapacity •Highinductance •MountedonUL94V-0ratedheader •FixedpinsforeasyPCBinsertion •Operatingtemperature:-55to+105°C

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription SRFETTMAON6718LusesadvancedtrenchtechnologywithamonolithicallyintegratedSchottkydiodetoprovideexcellentRDS(ON),andlowgatecharge.ThisdeviceisideallysuitedforuseasalowsideswitchinCPUcorepowerconversion. -RoHSCompliant -HalogenFree Featur

CustomerSpecification

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DualOutput,75OhmBNCCircuitBoardMount,WhiteValoxCase

文件：42.24 Kbytes Page：1 Pages