型号 功能描述 生产厂家&企业 LOGO 操作
HM628512C

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Cisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIor600-mil

HitachiHitachi, Ltd.

日立公司

Hitachi
HM628512C

4MSRAM(512-kword쨈8-bit)

Description TheHitachiHM628512Cisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingCMOSprocesstechnology(6-transistormemorycell).Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-mi

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Bisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi, Ltd.

日立公司

Hitachi

524288-wordx8-bitHighSpeedCMOSStaticRAM

文件:88.91 Kbytes Page:15 Pages

HITACHI-METALSHitachi Metals, Ltd

日立金属日立金属有限公司

HITACHI-METALS

WideTemperatureRangeVersion4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512CIisa4-MbitstaticRAMorganized512-kword×8-bit.HM628512CISerieshasrealizedhigherdensity,higherperformanceandlowpowerconsumptionbyemployingCMOSprocesstechnology(6-transistormemorycell).TheHM628512CISeriesofferslowpowerstandbypo

HitachiHitachi, Ltd.

日立公司

Hitachi

WideTemperatureRangeVersion4MSRAM(512-kword쨈8-bit)

Description TheHitachiHM628512CIisa4-MbitstaticRAMorganized512-kword×8-bit.HM628512CISerieshasrealizedhigherdensity,higherperformanceandlowpowerconsumptionbyemployingCMOSprocsstechnology(6-transistormemorycell).TheHM628512CISeriesofferslowpowerstandbypower

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Cisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIor600-mil

HitachiHitachi, Ltd.

日立公司

Hitachi

4MSRAM(512-kword쨈8-bit)

Description TheHitachiHM628512Cisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingCMOSprocesstechnology(6-transistormemorycell).Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-mi

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Cisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIor600-mil

HitachiHitachi, Ltd.

日立公司

Hitachi

4MSRAM(512-kword쨈8-bit)

Description TheHitachiHM628512Cisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingCMOSprocesstechnology(6-transistormemorycell).Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-mi

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Cisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIor600-mil

HitachiHitachi, Ltd.

日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Cisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIor600-mil

HitachiHitachi, Ltd.

日立公司

Hitachi

WideTemperatureRangeVersion4MSRAM(512-kword쨈8-bit)

Description TheHitachiHM628512CIisa4-MbitstaticRAMorganized512-kword×8-bit.HM628512CISerieshasrealizedhigherdensity,higherperformanceandlowpowerconsumptionbyemployingCMOSprocsstechnology(6-transistormemorycell).TheHM628512CISeriesofferslowpowerstandbypower

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

WideTemperatureRangeVersion4MSRAM(512-kword쨈8-bit)

Description TheHitachiHM628512CIisa4-MbitstaticRAMorganized512-kword×8-bit.HM628512CISerieshasrealizedhigherdensity,higherperformanceandlowpowerconsumptionbyemployingCMOSprocsstechnology(6-transistormemorycell).TheHM628512CISeriesofferslowpowerstandbypower

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

WideTemperatureRangeVersion4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512CIisa4-MbitstaticRAMorganized512-kword×8-bit.HM628512CISerieshasrealizedhigherdensity,higherperformanceandlowpowerconsumptionbyemployingCMOSprocesstechnology(6-transistormemorycell).TheHM628512CISeriesofferslowpowerstandbypo

HitachiHitachi, Ltd.

日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Cisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIor600-mil

HitachiHitachi, Ltd.

日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Cisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIor600-mil

HitachiHitachi, Ltd.

日立公司

Hitachi

4MSRAM(512-kword쨈8-bit)

Description TheHitachiHM628512Cisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingCMOSprocesstechnology(6-transistormemorycell).Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-mi

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

4MSRAM(512-kword쨈8-bit)

Description TheHitachiHM628512Cisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingCMOSprocesstechnology(6-transistormemorycell).Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-mi

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Cisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIor600-mil

HitachiHitachi, Ltd.

日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Cisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIor600-mil

HitachiHitachi, Ltd.

日立公司

Hitachi

WideTemperatureRangeVersion4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512CIisa4-MbitstaticRAMorganized512-kword×8-bit.HM628512CISerieshasrealizedhigherdensity,higherperformanceandlowpowerconsumptionbyemployingCMOSprocesstechnology(6-transistormemorycell).TheHM628512CISeriesofferslowpowerstandbypo

HitachiHitachi, Ltd.

日立公司

Hitachi

WideTemperatureRangeVersion4MSRAM(512-kword쨈8-bit)

Description TheHitachiHM628512CIisa4-MbitstaticRAMorganized512-kword×8-bit.HM628512CISerieshasrealizedhigherdensity,higherperformanceandlowpowerconsumptionbyemployingCMOSprocsstechnology(6-transistormemorycell).TheHM628512CISeriesofferslowpowerstandbypower

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Cisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIor600-mil

HitachiHitachi, Ltd.

日立公司

Hitachi

4MSRAM(512-kword쨈8-bit)

Description TheHitachiHM628512Cisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingCMOSprocesstechnology(6-transistormemorycell).Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-mi

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Cisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIor600-mil

HitachiHitachi, Ltd.

日立公司

Hitachi

4MSRAM(512-kword쨈8-bit)

Description TheHitachiHM628512Cisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingCMOSprocesstechnology(6-transistormemorycell).Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-mi

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Cisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIor600-mil

HitachiHitachi, Ltd.

日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Cisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIor600-mil

HitachiHitachi, Ltd.

日立公司

Hitachi

WideTemperatureRangeVersion4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512CIisa4-MbitstaticRAMorganized512-kword×8-bit.HM628512CISerieshasrealizedhigherdensity,higherperformanceandlowpowerconsumptionbyemployingCMOSprocesstechnology(6-transistormemorycell).TheHM628512CISeriesofferslowpowerstandbypo

HitachiHitachi, Ltd.

日立公司

Hitachi

WideTemperatureRangeVersion4MSRAM(512-kword쨈8-bit)

Description TheHitachiHM628512CIisa4-MbitstaticRAMorganized512-kword×8-bit.HM628512CISerieshasrealizedhigherdensity,higherperformanceandlowpowerconsumptionbyemployingCMOSprocsstechnology(6-transistormemorycell).TheHM628512CISeriesofferslowpowerstandbypower

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Cisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIor600-mil

HitachiHitachi, Ltd.

日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Cisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIor600-mil

HitachiHitachi, Ltd.

日立公司

Hitachi

4MSRAM(512-kword쨈8-bit)

Description TheHitachiHM628512Cisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingCMOSprocesstechnology(6-transistormemorycell).Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-mi

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

4MSRAM(512-kword쨈8-bit)

Description TheHitachiHM628512Cisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingCMOSprocesstechnology(6-transistormemorycell).Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-mi

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Cisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIor600-mil

HitachiHitachi, Ltd.

日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Cisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIor600-mil

HitachiHitachi, Ltd.

日立公司

Hitachi

WideTemperatureRangeVersion4MSRAM(512-kword쨈8-bit)

Description TheHitachiHM628512CIisa4-MbitstaticRAMorganized512-kword×8-bit.HM628512CISerieshasrealizedhigherdensity,higherperformanceandlowpowerconsumptionbyemployingCMOSprocsstechnology(6-transistormemorycell).TheHM628512CISeriesofferslowpowerstandbypower

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

WideTemperatureRangeVersion4MSRAM(512-kword쨈8-bit)

Description TheHitachiHM628512CIisa4-MbitstaticRAMorganized512-kword×8-bit.HM628512CISerieshasrealizedhigherdensity,higherperformanceandlowpowerconsumptionbyemployingCMOSprocsstechnology(6-transistormemorycell).TheHM628512CISeriesofferslowpowerstandbypower

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

WideTemperatureRangeVersion4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512CIisa4-MbitstaticRAMorganized512-kword×8-bit.HM628512CISerieshasrealizedhigherdensity,higherperformanceandlowpowerconsumptionbyemployingCMOSprocesstechnology(6-transistormemorycell).TheHM628512CISeriesofferslowpowerstandbypo

HitachiHitachi, Ltd.

日立公司

Hitachi

4MSRAM(512KWORDX8BIT)

Description TheHitachiHM628512Aisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi, Ltd.

日立公司

Hitachi

524288-wordx8-bitHighSpeedCMOSStaticRAM

Description TheHitachiHM628512AIisa4-MbitstaticRAMorganized512-kwordx8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyconploying0.5μmHi-CMOSprocesstechnology.

HitachiHitachi, Ltd.

日立公司

Hitachi

524288-wordx8-bitHighSpeedCMOSStaticRAM

文件:88.91 Kbytes Page:15 Pages

HITACHI-METALSHitachi Metals, Ltd

日立金属日立金属有限公司

HITACHI-METALS

HM628512C产品属性

  • 类型

    描述

  • 型号

    HM628512C

  • 制造商

    HITACHI

  • 制造商全称

    Hitachi Semiconductor

  • 功能描述

    4 M SRAM(512-kword x 8-bit)

更新时间:2024-5-10 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HITACHI
2020+
TSOP32
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
HITACHI/日立
22+
TSOP32
100000
代理渠道/只做原装/可含税
HIT
23+
SOP32
20000
原厂原装正品现货
HITACHI
01+
TSSOP
47
一级代理,专注军工、汽车、医疗、工业、新能源、电力
HITACHI/日立
20+
TSOP32
35830
原装优势主营型号-可开原型号增税票
HITACHI
23+
SOP
3200
全新原装、诚信经营、公司现货销售
HITACHI/日立
23+
SOP32
6000
原装正品,支持实单
HITACHI/日立
24+
SOP-32
880000
明嘉莱只做原装正品现货
HITACHI
22+
QFP
500
样品可出,优势库存欢迎实单
HITACHI/日立
22+
TSOP32
354000

HM628512C芯片相关品牌

  • Allegro
  • ETC1
  • HP
  • IVO
  • LEM
  • MILL-MAX
  • Samsung
  • SII
  • SynQor
  • TOSHIBA
  • Vectron
  • Winchester

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    2012-11-7