型号 功能描述 生产厂家&企业 LOGO 操作
HM5117805

16MEDODRAM(2-MwordX8-bit)2kRefresh

Description TheHM5117805isaCMOSdynamicRAMorganized2,097,152-word×8-bit.Itemploysthemost advancedCMOStechnologyforhighperformanceandlowpower.TheHM5117805offersExtendedDataOut(EDO)PageModeasahighspeedaccessmode.MultiplexedaddressinputpermitstheHM5117805

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

16MEDODRAM(2-MwordX8-bit)2kRefresh

Description TheHM5117805isaCMOSdynamicRAMorganized2,097,152-word×8-bit.Itemploysthemost advancedCMOStechnologyforhighperformanceandlowpower.TheHM5117805offersExtendedDataOut(EDO)PageModeasahighspeedaccessmode.MultiplexedaddressinputpermitstheHM5117805

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

16MEDODRAM(2-MwordX8-bit)2kRefresh

Description TheHM5117805isaCMOSdynamicRAMorganized2,097,152-word×8-bit.Itemploysthemost advancedCMOStechnologyforhighperformanceandlowpower.TheHM5117805offersExtendedDataOut(EDO)PageModeasahighspeedaccessmode.MultiplexedaddressinputpermitstheHM5117805

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

16MEDODRAM(2-MwordX8-bit)2kRefresh

Description TheHM5117805isaCMOSdynamicRAMorganized2,097,152-word×8-bit.Itemploysthemost advancedCMOStechnologyforhighperformanceandlowpower.TheHM5117805offersExtendedDataOut(EDO)PageModeasahighspeedaccessmode.MultiplexedaddressinputpermitstheHM5117805

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

16MEDODRAM(2-MwordX8-bit)2kRefresh

Description TheHM5117805isaCMOSdynamicRAMorganized2,097,152-word×8-bit.Itemploysthemost advancedCMOStechnologyforhighperformanceandlowpower.TheHM5117805offersExtendedDataOut(EDO)PageModeasahighspeedaccessmode.MultiplexedaddressinputpermitstheHM5117805

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

16MEDODRAM(2-MwordX8-bit)2kRefresh

Description TheHM5117805isaCMOSdynamicRAMorganized2,097,152-word×8-bit.Itemploysthemost advancedCMOStechnologyforhighperformanceandlowpower.TheHM5117805offersExtendedDataOut(EDO)PageModeasahighspeedaccessmode.MultiplexedaddressinputpermitstheHM5117805

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

16MEDODRAM(2-MwordX8-bit)2kRefresh

Description TheHM5117805isaCMOSdynamicRAMorganized2,097,152-word×8-bit.Itemploysthemost advancedCMOStechnologyforhighperformanceandlowpower.TheHM5117805offersExtendedDataOut(EDO)PageModeasahighspeedaccessmode.MultiplexedaddressinputpermitstheHM5117805

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

16MEDODRAM(2-MwordX8-bit)2kRefresh

Description TheHM5117805isaCMOSdynamicRAMorganized2,097,152-word×8-bit.Itemploysthemost advancedCMOStechnologyforhighperformanceandlowpower.TheHM5117805offersExtendedDataOut(EDO)PageModeasahighspeedaccessmode.MultiplexedaddressinputpermitstheHM5117805

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

16MEDODRAM(2-MwordX8-bit)2kRefresh

Description TheHM5117805isaCMOSdynamicRAMorganized2,097,152-word×8-bit.Itemploysthemost advancedCMOStechnologyforhighperformanceandlowpower.TheHM5117805offersExtendedDataOut(EDO)PageModeasahighspeedaccessmode.MultiplexedaddressinputpermitstheHM5117805

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

16MEDODRAM(2-MwordX8-bit)2kRefresh

Description TheHM5117805isaCMOSdynamicRAMorganized2,097,152-word×8-bit.Itemploysthemost advancedCMOStechnologyforhighperformanceandlowpower.TheHM5117805offersExtendedDataOut(EDO)PageModeasahighspeedaccessmode.MultiplexedaddressinputpermitstheHM5117805

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

16MEDODRAM(2-MwordX8-bit)2kRefresh

Description TheHM5117805isaCMOSdynamicRAMorganized2,097,152-word×8-bit.Itemploysthemost advancedCMOStechnologyforhighperformanceandlowpower.TheHM5117805offersExtendedDataOut(EDO)PageModeasahighspeedaccessmode.MultiplexedaddressinputpermitstheHM5117805

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

16MEDODRAM(2-MwordX8-bit)2kRefresh

Description TheHM5117805isaCMOSdynamicRAMorganized2,097,152-word×8-bit.Itemploysthemost advancedCMOStechnologyforhighperformanceandlowpower.TheHM5117805offersExtendedDataOut(EDO)PageModeasahighspeedaccessmode.MultiplexedaddressinputpermitstheHM5117805

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

16MEDODRAM(2-MwordX8-bit)2kRefresh

Description TheHM5117805isaCMOSdynamicRAMorganized2,097,152-word×8-bit.Itemploysthemost advancedCMOStechnologyforhighperformanceandlowpower.TheHM5117805offersExtendedDataOut(EDO)PageModeasahighspeedaccessmode.MultiplexedaddressinputpermitstheHM5117805

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

16MEDODRAM(2-MwordX8-bit)2kRefresh

Description TheHM5117805isaCMOSdynamicRAMorganized2,097,152-word×8-bit.Itemploysthemost advancedCMOStechnologyforhighperformanceandlowpower.TheHM5117805offersExtendedDataOut(EDO)PageModeasahighspeedaccessmode.MultiplexedaddressinputpermitstheHM5117805

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

16MEDODRAM(2-MwordX8-bit)2kRefresh

Description TheHM5117805isaCMOSdynamicRAMorganized2,097,152-word×8-bit.Itemploysthemost advancedCMOStechnologyforhighperformanceandlowpower.TheHM5117805offersExtendedDataOut(EDO)PageModeasahighspeedaccessmode.MultiplexedaddressinputpermitstheHM5117805

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

16MEDODRAM(2-MwordX8-bit)2kRefresh

Description TheHM5117805isaCMOSdynamicRAMorganized2,097,152-word×8-bit.Itemploysthemost advancedCMOStechnologyforhighperformanceandlowpower.TheHM5117805offersExtendedDataOut(EDO)PageModeasahighspeedaccessmode.MultiplexedaddressinputpermitstheHM5117805

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

16MEDODRAM(2-MwordX8-bit)2kRefresh

Description TheHM5117805isaCMOSdynamicRAMorganized2,097,152-word×8-bit.Itemploysthemost advancedCMOStechnologyforhighperformanceandlowpower.TheHM5117805offersExtendedDataOut(EDO)PageModeasahighspeedaccessmode.MultiplexedaddressinputpermitstheHM5117805

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

16MEDODRAM(2-MwordX8-bit)2kRefresh

Description TheHM5117805isaCMOSdynamicRAMorganized2,097,152-word×8-bit.Itemploysthemost advancedCMOStechnologyforhighperformanceandlowpower.TheHM5117805offersExtendedDataOut(EDO)PageModeasahighspeedaccessmode.MultiplexedaddressinputpermitstheHM5117805

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

16MEDODRAM(2-MwordX8-bit)2kRefresh

Description TheHM5117805isaCMOSdynamicRAMorganized2,097,152-word×8-bit.Itemploysthemost advancedCMOStechnologyforhighperformanceandlowpower.TheHM5117805offersExtendedDataOut(EDO)PageModeasahighspeedaccessmode.MultiplexedaddressinputpermitstheHM5117805

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

16MEDODRAM(2-MwordX8-bit)2kRefresh

Description TheHM5117805isaCMOSdynamicRAMorganized2,097,152-word×8-bit.Itemploysthemost advancedCMOStechnologyforhighperformanceandlowpower.TheHM5117805offersExtendedDataOut(EDO)PageModeasahighspeedaccessmode.MultiplexedaddressinputpermitstheHM5117805

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

16MEDODRAM(2-MwordX8-bit)2kRefresh

Description TheHM5117805isaCMOSdynamicRAMorganized2,097,152-word×8-bit.Itemploysthemost advancedCMOStechnologyforhighperformanceandlowpower.TheHM5117805offersExtendedDataOut(EDO)PageModeasahighspeedaccessmode.MultiplexedaddressinputpermitstheHM5117805

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

16MEDODRAM(2-MwordX8-bit)2kRefresh

Description TheHM5117805isaCMOSdynamicRAMorganized2,097,152-word×8-bit.Itemploysthemost advancedCMOStechnologyforhighperformanceandlowpower.TheHM5117805offersExtendedDataOut(EDO)PageModeasahighspeedaccessmode.MultiplexedaddressinputpermitstheHM5117805

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

16MEDODRAM(2-MwordX8-bit)2kRefresh

Description TheHM5117805isaCMOSdynamicRAMorganized2,097,152-word×8-bit.Itemploysthemost advancedCMOStechnologyforhighperformanceandlowpower.TheHM5117805offersExtendedDataOut(EDO)PageModeasahighspeedaccessmode.MultiplexedaddressinputpermitstheHM5117805

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

16MEDODRAM(2-MwordX8-bit)2kRefresh

Description TheHM5117805isaCMOSdynamicRAMorganized2,097,152-word×8-bit.Itemploysthemost advancedCMOStechnologyforhighperformanceandlowpower.TheHM5117805offersExtendedDataOut(EDO)PageModeasahighspeedaccessmode.MultiplexedaddressinputpermitstheHM5117805

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

16MEDODRAM(2-MwordX8-bit)2kRefresh

Description TheHM5117805isaCMOSdynamicRAMorganized2,097,152-word×8-bit.Itemploysthemost advancedCMOStechnologyforhighperformanceandlowpower.TheHM5117805offersExtendedDataOut(EDO)PageModeasahighspeedaccessmode.MultiplexedaddressinputpermitstheHM5117805

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

2,097,152-Wordx8-BitDYNAMICRAM:FASTPAGEMODETYPEWITHEDO

2,097,152-Wordx8-BitDYNAMICRAM:FASTPAGEMODETYPEWITHEDO

OKIOki Electric Cable Co.,Ltd

冲电线冲电线株式会社

OKI

2,097,152-Wordx8-BitDYNAMICRAM:FASTPAGEMODETYPEWITHEDO

DESCRIPTION TheMSM5117805Bisa2,097,152-wordx8-bitdynamicRAMfabricatedinOkissilicon-gateCMOStechnology.TheMSM5117805Bachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/double-layermetalC

OKIOki Electric Cable Co.,Ltd

冲电线冲电线株式会社

OKI

2,097,152-Wordx8-BitDYNAMICRAM:FASTPAGEMODETYPEWITHEDO

DESCRIPTION TheMSM5117805Cisa2,097,152-wordx8-bitdynamicRAMfabricatedinOkissilicon-gateCMOStechnology.TheMSM5117805Cachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/double-layermetalC

OKIOki Electric Cable Co.,Ltd

冲电线冲电线株式会社

OKI

2,097,152-Wordx8-BitDYNAMICRAM:FASTPAGEMODETYPEWITHEDO

DESCRIPTION TheMSM5117805Disa2,097,152-wordx8-bitdynamicRAMfabricatedinOki’ssilicon-gateCMOStechnology.TheMSM5117805Dachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/double-layermetal

OKIOki Electric Cable Co.,Ltd

冲电线冲电线株式会社

OKI

HM5117805产品属性

  • 类型

    描述

  • 型号

    HM5117805

  • 制造商

    ELPIDA

  • 制造商全称

    Elpida Memory

  • 功能描述

    16 M EDO DRAM(2-Mword X 8-bit) 2 k Refresh

更新时间:2024-6-1 15:24:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HITACHI/日立
SOP
265209
假一罚十原包原标签常备现货!
HD
2023+
TSOP
50000
原装现货
HM
23+
TSOP
5000
专注配单,只做原装进口现货
HM
23+
TSOP
5000
专注配单,只做原装进口现货
HITACHI/日立
2402+
SOJ28
8324
原装正品!实单价优!
HITACHI/日立
2022
SOP
80000
原装现货,OEM渠道,欢迎咨询
HITACHI/日立
23+
SOP
50000
全新原装正品现货,支持订货
HIT
SOJ
400
HITACHI/日立
2118+
SOJ28
9850
公司现货全新原装假一罚十特价
HITACHI
22+
SOJ28
32350
原装正品 假一罚十 公司现货

HM5117805芯片相关品牌

  • ARIES
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  • MEANWELL
  • PREDIP
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  • SMC
  • TRUMPOWER
  • WPI
  • YANGJIE

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    2012-11-7