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位置：首页 > IC中文资料第1617页 > GT30

GT30价格

参考价格：￥0.6039

型号：GT3020/L2C-B45562C4CB2/2T 品牌：Everlight 备注：这里有GT30多少钱，2024年最近7天走势，今日出价，今日竞价，GT30批发/采购报价，GT30行情走势销售排行榜，GT30报价。
型号 功能描述 生产厂家&企业 LOGO 操作
GT30

PNEUMATIC TURBINE VIBRATIORS

[VIBTEC]

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2
GT3005

Single ratio (see schematic), thru-hole package

•MeetsMIL-STD-1553applications •Singleratio(seeschematic),thru-holepackage •LevelT-forhighreliabilitycriticalmilitaryapplications •AlsoavailableinLevelCandM(seewebsite) •PackageAis4-lead;packageBis6-lead(centertap) •Applicablespecifcations:

MPSINDMPS Industries, Inc.

美国芯源

MPSIND
GT3006

Single ratio (see schematic), thru-hole package

•MeetsMIL-STD-1553applications •Singleratio(seeschematic),thru-holepackage •LevelT-forhighreliabilitycriticalmilitaryapplications •AlsoavailableinLevelCandM(seewebsite) •PackageAis4-lead;packageBis6-lead(centertap) •Applicablespecifcations:

MPSINDMPS Industries, Inc.

美国芯源

MPSIND
GT3007

Single ratio (see schematic), thru-hole package

•MeetsMIL-STD-1553applications •Singleratio(seeschematic),thru-holepackage •LevelT-forhighreliabilitycriticalmilitaryapplications •AlsoavailableinLevelCandM(seewebsite) •PackageAis4-lead;packageBis6-lead(centertap) •Applicablespecifcations:

MPSINDMPS Industries, Inc.

美国芯源

MPSIND
GT3008

Single ratio (see schematic), thru-hole package

•MeetsMIL-STD-1553applications •Singleratio(seeschematic),thru-holepackage •LevelT-forhighreliabilitycriticalmilitaryapplications •AlsoavailableinLevelCandM(seewebsite) •PackageAis4-lead;packageBis6-lead(centertap) •Applicablespecifcations:

MPSINDMPS Industries, Inc.

美国芯源

MPSIND
GT3009

Single ratio (see schematic), thru-hole package

•MeetsMIL-STD-1553applications •Singleratio(seeschematic),thru-holepackage •LevelT-forhighreliabilitycriticalmilitaryapplications •AlsoavailableinLevelCandM(seewebsite) •PackageAis4-lead;packageBis6-lead(centertap) •Applicablespecifcations:

MPSINDMPS Industries, Inc.

美国芯源

MPSIND
GT300X

Single ratio (see schematic), thru-hole package

•MeetsMIL-STD-1553applications •Singleratio(seeschematic),thru-holepackage •LevelT-forhighreliabilitycriticalmilitaryapplications •AlsoavailableinLevelCandM(seewebsite) •PackageAis4-lead;packageBis6-lead(centertap) •Applicablespecifcations:

MPSINDMPS Industries, Inc.

美国芯源

MPSIND
GT3028

Single ratio (see schematic), thru-hole package

•MeetsMIL-STD-1553applications •Singleratio(seeschematic),thru-holepackage •LevelT-forhighreliabilitycriticalmilitaryapplications •AlsoavailableinLevelCandM(seewebsite) •PackageAis4-lead;packageBis6-lead(centertap) •Applicablespecifcations:

MPSINDMPS Industries, Inc.

美国芯源

MPSIND
GT3029

Single ratio (see schematic), thru-hole package

•MeetsMIL-STD-1553applications •Singleratio(seeschematic),thru-holepackage •LevelT-forhighreliabilitycriticalmilitaryapplications •AlsoavailableinLevelCandM(seewebsite) •PackageAis4-lead;packageBis6-lead(centertap) •Applicablespecifcations:

MPSINDMPS Industries, Inc.

美国芯源

MPSIND
GT3030

Single ratio (see schematic), thru-hole package

•MeetsMIL-STD-1553applications •Singleratio(seeschematic),thru-holepackage •LevelT-forhighreliabilitycriticalmilitaryapplications •AlsoavailableinLevelCandM(seewebsite) •PackageAis4-lead;packageBis6-lead(centertap) •Applicablespecifcations:

MPSINDMPS Industries, Inc.

美国芯源

MPSIND
GT30F122

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT30F123

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT30F124

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT30F125

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT30G122

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT30G123

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT30G124

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT30G125

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT30J101

Silicon N Channel IGBT

DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC(

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT30J101

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT30J121

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

HighPowerSwitchingApplications FastSwitchingApplications •Fourth-generationIGBT •Enhancementmodetype •Fastswitching(FS):Operatingfrequencyupto50kHz(reference) Highspeed:tf=0.05μs(typ.) Lowswitchingloss:Eon=1.00mJ(typ.):Eoff=0.80mJ(typ.) •Low

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT30J121

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT30J122

4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING

DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC(

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT30J122

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT30J122A

Dedicated to Current-Resonant Inverter Switching Applications Dedicated to Partial-Switching Power Factor rrection (PFC) Applications

DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC(

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT30J124

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT30J126

High Power Switching Applications Fast Switching Applications

DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC(

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT30J126

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT30J301

N CHANNEL IGBT(HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC(

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT30J301

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT30J311

N CHANNEL IGBT(HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC(

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT30J322

N CHANNEL MOS TYPE ( THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS)

DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC(

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT30J322

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT30J324

Insulated Gate Bipolar Transistor Silicon N Channel IGBT

HighPowerSwitchingApplications FastSwitchingApplications •Fourth-generationIGBT •Enhancementmodetype •Fastswitching(FS):Operatingfrequencyupto50kHz(reference) Highspeed:tf=0.05μs(typ.) Lowswitchingloss:Eon=1.00mJ(typ.)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT30J324

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT30J341

Discrete IGBTs Silicon N-Channel IGBT

1.Applications •MotorDrivers 2.Features (1)Sixthgeneration (2)Lowsaturationvoltage:VCE(sat)=1.5V(typ.)(IC=30A) (3)Highjunctiontemperature:Tj=175ㄹ°C(max) (4)FRDincludedbetweenemitterandcollector

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT30-300-300-0.23-0

包装：散装 描述：THERM PAD 300MMX300MM PINK 风扇，热管理 热 - 垫，片

TGLOBAL

T-Global Technology

TGLOBAL
GT303J1K

封装/外壳：珠，玻璃 包装：散装 描述：THERMISTOR NTC 30KOHM 3977K BEAD 传感器，变送器 温度传感器 - NTC 热敏电阻器

LittelfuseLittelfuse Inc.

力特力特公司

Littelfuse
GT30F124

Discrete IGBTs

文件：835.68 Kbytes Page：16 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT30F124

MOSFET 600V 200A IGBT

文件：226.68 Kbytes Page：2 Pages

AGELECTRONICA

AG Electronica

AGELECTRONICA
GT30F125

Discrete IGBTs

文件：835.68 Kbytes Page：16 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT30F126

MOSFET 600V 200A IGBT

文件：226.68 Kbytes Page：2 Pages

AGELECTRONICA

AG Electronica

AGELECTRONICA
GT30F131

MOSFET 600V 200A IGBT

文件：226.68 Kbytes Page：2 Pages

AGELECTRONICA

AG Electronica

AGELECTRONICA
GT30F131

Discrete IGBTs

文件：835.68 Kbytes Page：16 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT30F132

MOSFET 600V 200A IGBT

文件：226.68 Kbytes Page：2 Pages

AGELECTRONICA

AG Electronica

AGELECTRONICA
GT30G124

MOSFET 600V 200A IGBT

文件：226.68 Kbytes Page：2 Pages

AGELECTRONICA

AG Electronica

AGELECTRONICA
GT30G124

Discrete IGBTs

文件：835.68 Kbytes Page：16 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT30G125

Discrete IGBTs

文件：835.68 Kbytes Page：16 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT30J101

Silicon N Channel IGBT High Power Switching Applications

文件：193.83 Kbytes Page：6 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT30J101_06

Silicon N Channel IGBT High Power Switching Applications

文件：193.83 Kbytes Page：6 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT30J110SRA

Discrete IGBTs Silicon N-Channel IGBT

文件：543.86 Kbytes Page：10 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT30J121_06

Silicon N Channel IGBT High Power Switching Applications

文件：182.5 Kbytes Page：6 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT30J124

Discrete IGBTs

文件：835.68 Kbytes Page：16 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT30J127

MOSFET 600V 200A IGBT

文件：226.68 Kbytes Page：2 Pages

AGELECTRONICA

AG Electronica

AGELECTRONICA
GT30J311

Discrete IGBTs

文件：835.68 Kbytes Page：16 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT30J324

Silicon N Channel IGBT High Power Switching Applications

文件：190.56 Kbytes Page：7 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
GT30J324_06

Silicon N Channel IGBT High Power Switching Applications

文件：190.56 Kbytes Page：7 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

GT30产品属性

  • 类型

    描述

  • 型号

    GT30

  • 制造商

    3M Electronic Products Division

  • 功能描述

    CLOTH TAPE BLACK 50MM X 50M

  • 制造商

    3M Electronic Products Division

  • 功能描述

    CLOTH TAPE BLACK 50MM X 50M; Tape

  • Type

    Duct; Tape Backing

  • Material

    PE(Polyethylene); Tape Width -

  • Metric

    50mm; Tape Width -

  • Imperial

    1.97"; Tape Length -

  • Metric

    50m; Tape Length -

  • Imperial

    164.04ft; Tape

  • Colour

    Black;

  • Colour

    Black; ;RoHS

  • Compliant

    NA

GT30供应商更多...

更新时间：2024-5-24 14:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市明嘉莱科技有限公司
GT30L32S4WIC
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24+
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157472
明嘉莱只做原装正品现货
询价
深圳市富诚威科技有限公司
GT30J122A
TOSHIBA
22+
TO3P
59050
公司原装现货.价格优惠
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GT300CU120T2VH
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24+25+/26+27+
车规-模块MODULE
1880
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
中天科工半导体（深圳）有限公司
GT300HF120T2VH
SILVERMICRO
专业模块
MODULE
8513
模块原装主营-可开原型号增税票
询价
深圳市桐芯微电子有限公司
GT30F120
TOSHIBA/东芝
14+
TO220F
4617
全新原装正品现货实单价可谈
询价
深圳市毅创腾电子科技有限公司
GT3000
GLOBESPAN
23+
PLCC68
2500
绝对全新原装!现货!特价!请放心订购!
询价
深圳市壹芯创科技有限公司
GT3000
CLOBESPAN
22+
PLCC68
2000
进口原装!现货库存
询价
深圳市能创芯电子科技有限公司
GT30L24T3Y
GENITOP
23+
SOP8
8900
进口原装现货
询价
深圳市佳鑫美电子科技有限公司
GT308L-SO
GREENCHIP
23+
SSOP24
5263
原装优势公司现货!
询价
深圳市星辰微电科技有限公司
GT300FF120C8NS
银茂微
23+
MODULE
4500
专营国产功率器件
询价

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