型号 功能描述 生产厂家&企业 LOGO 操作
GS81032AT

32Kx321MSynchronousBurstSRAM

FunctionalDescription Applications TheGS81032Aisa1,048,576-bithighperformancesynchronousSRAMwitha2-bitburstaddresscounter.AlthoughofatypeoriginallydevelopedforLevel2CacheapplicationssupportinghighperformanceCPUs,thedevicenowfindsapplicationinsynchronousSRAM

GSI

GSI Technology

GSI

32Kx321MSynchronousBurstSRAM

FunctionalDescription Applications TheGS81032Aisa1,048,576-bithighperformancesynchronousSRAMwitha2-bitburstaddresscounter.AlthoughofatypeoriginallydevelopedforLevel2CacheapplicationssupportinghighperformanceCPUs,thedevicenowfindsapplicationinsynchronousSRAM

GSI

GSI Technology

GSI

32Kx321MSynchronousBurstSRAM

FunctionalDescription Applications TheGS81032Aisa1,048,576-bithighperformancesynchronousSRAMwitha2-bitburstaddresscounter.AlthoughofatypeoriginallydevelopedforLevel2CacheapplicationssupportinghighperformanceCPUs,thedevicenowfindsapplicationinsynchronousSRAM

GSI

GSI Technology

GSI

32Kx321MSynchronousBurstSRAM

FunctionalDescription Applications TheGS81032Aisa1,048,576-bithighperformancesynchronousSRAMwitha2-bitburstaddresscounter.AlthoughofatypeoriginallydevelopedforLevel2CacheapplicationssupportinghighperformanceCPUs,thedevicenowfindsapplicationinsynchronousSRAM

GSI

GSI Technology

GSI

32Kx321MSynchronousBurstSRAM

FunctionalDescription Applications TheGS81032Aisa1,048,576-bithighperformancesynchronousSRAMwitha2-bitburstaddresscounter.AlthoughofatypeoriginallydevelopedforLevel2CacheapplicationssupportinghighperformanceCPUs,thedevicenowfindsapplicationinsynchronousSRAM

GSI

GSI Technology

GSI

32Kx321MSynchronousBurstSRAM

FunctionalDescription Applications TheGS81032Aisa1,048,576-bithighperformancesynchronousSRAMwitha2-bitburstaddresscounter.AlthoughofatypeoriginallydevelopedforLevel2CacheapplicationssupportinghighperformanceCPUs,thedevicenowfindsapplicationinsynchronousSRAM

GSI

GSI Technology

GSI

32Kx321MSynchronousBurstSRAM

FunctionalDescription Applications TheGS81032Aisa1,048,576-bithighperformancesynchronousSRAMwitha2-bitburstaddresscounter.AlthoughofatypeoriginallydevelopedforLevel2CacheapplicationssupportinghighperformanceCPUs,thedevicenowfindsapplicationinsynchronousSRAM

GSI

GSI Technology

GSI

32Kx321MSynchronousBurstSRAM

FunctionalDescription Applications TheGS81032Aisa1,048,576-bithighperformancesynchronousSRAMwitha2-bitburstaddresscounter.AlthoughofatypeoriginallydevelopedforLevel2CacheapplicationssupportinghighperformanceCPUs,thedevicenowfindsapplicationinsynchronousSRAM

GSI

GSI Technology

GSI

32Kx321MSynchronousBurstSRAM

FunctionalDescription Applications TheGS81032Aisa1,048,576-bithighperformancesynchronousSRAMwitha2-bitburstaddresscounter.AlthoughofatypeoriginallydevelopedforLevel2CacheapplicationssupportinghighperformanceCPUs,thedevicenowfindsapplicationinsynchronousSRAM

GSI

GSI Technology

GSI

32Kx321MSynchronousBurstSRAM

FunctionalDescription Applications TheGS81032Aisa1,048,576-bithighperformancesynchronousSRAMwitha2-bitburstaddresscounter.AlthoughofatypeoriginallydevelopedforLevel2CacheapplicationssupportinghighperformanceCPUs,thedevicenowfindsapplicationinsynchronousSRAM

GSI

GSI Technology

GSI

32Kx321MSynchronousBurstSRAM

FunctionalDescription Applications TheGS81032Aisa1,048,576-bithighperformancesynchronousSRAMwitha2-bitburstaddresscounter.AlthoughofatypeoriginallydevelopedforLevel2CacheapplicationssupportinghighperformanceCPUs,thedevicenowfindsapplicationinsynchronousSRAM

GSI

GSI Technology

GSI

32Kx321MSynchronousBurstSRAM

FunctionalDescription Applications TheGS81032Aisa1,048,576-bithighperformancesynchronousSRAMwitha2-bitburstaddresscounter.AlthoughofatypeoriginallydevelopedforLevel2CacheapplicationssupportinghighperformanceCPUs,thedevicenowfindsapplicationinsynchronousSRAM

GSI

GSI Technology

GSI

8-BITSINGLECHIPMICROCOMPUTERS

OVERVIEW TheGMS810SeriesisthehighspeedandLowvoltageoperating8-bitsinglechipmicrocomputers.ThisMCUcontainsG8MCcore,ROM,RAM,input/outputportsandfivemulti-functiontimer/counters. FEATURES&PINASSIGNMENTS(TOPVIEW) •ROMsize.............4,096Bytes(

HynixHynix Semiconductor

SK海力士海力士半导体

Hynix

HYNIXSEMICONDUCTOR8-BITSINGLE-CHIPMICROCONTROLLERS

Description TheHMS81004E/08E/16E/24E/32EisanadvancedCMOS8-bitmicrocontrollerwith4/8/16/24/32KbytesofROM.ThedeviceisoneofGMS800family.TheHYNIXHMS81004E/08E/16E/24E/32EisapowerfulmicrocontrollerwhichprovidesahighlyflexibleandcosteffectivesolutiontomanyURappl

HynixHynix Semiconductor

SK海力士海力士半导体

Hynix

HYNIXSEMICONDUCTOR8-BITSINGLE-CHIPMICROCONTROLLERS

Description TheHMS81004E/08E/16E/24E/32EisanadvancedCMOS8-bitmicrocontrollerwith4/8/16/24/32KbytesofROM.ThedeviceisoneofGMS800family.TheHYNIXHMS81004E/08E/16E/24E/32EisapowerfulmicrocontrollerwhichprovidesahighlyflexibleandcosteffectivesolutiontomanyURappl

HynixHynix Semiconductor

SK海力士海力士半导体

Hynix

T1/CEPTISDN-PRITRANSFORMERS

文件:191 Kbytes Page:1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

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GS81032AT产品属性

  • 类型

    描述

  • 型号

    GS81032AT

  • 制造商

    GSI

  • 制造商全称

    GSI Technology

  • 功能描述

    32K x 32 1M Synchronous Burst SRAM

更新时间:2024-5-14 17:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
GSI
23+
QFP
1028
专业优势供应
GSIGroupInc
2021+
N/A
6800
只有原装正品
THAILAND
23+
NA/
1400
优势代理渠道,原装正品,可全系列订货开增值税票
AME
21+
SOT-23
12588
原装正品,自己库存 假一罚十
Thailand
2020+
SOP23
16800
绝对原装进口现货,假一赔十,价格优势!?
AME
23+
SOT-23
30000
代理全新原装现货,价格优势
AME
21+
SOT-23
6000
原装现货假一赔十
VISHAY
1742+
SOT23
98215
只要网上有绝对有货!只做原装正品!
VISHAY-威世
24+25+/26+27+
SOT-23.贴片
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
GS
22+
DIP-40
5000
进口原装!现货库存

GS81032AT芯片相关品牌

  • BANNER
  • CHEMI-CON
  • CTMICRO
  • JUXING
  • LINER
  • MCC
  • Microchip
  • MINMAX
  • NEL
  • ROHM
  • SANYO
  • SEOUL

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  • GS7660IP-开关电容电压转换器

    特点•低输出阻抗(在VIN=5V,典型的35Ω)•低静态电流(典型值36μA在VIN=5V)•高功率转换效率(典型值98%)•简单而准确的电压转换积极到消极的极性•改进的锁定保护•无需外部二极管应用•-5V电源+5V逻辑电源•EIA/TIA-232E和TIA/EIA-562电源•便携式电话̶

    2012-12-27
  • GS6332-3引脚,低功率,P复位电路

    •GS6333和GS6332系统监控电路旨在监视VCC和数字系统中提供一个复位信号到主机的处理器在必要时。无外部元件。•当处理器的电源电压下降到低于复位阈值,复位输出驱动为有效,小于40μs(TD1)。为复位保持活跃一段时间(TD2),高于该阈值后的VCC上升电压。•为了防止抖动,复位阈值电压有一个内置的滞后的Vth为0.4%。•GS6333具有低电平有效的复位输出,而GS6332具有高有效的复位输出。这两款器件有推/拉输出驱动。•复位信号是保证有效,VCC=1.0V。

    2012-11-21