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GP10N价格
参考价格：￥0.5312
型号：GP10N-E3/54 品牌：Vishay 备注：这里有GP10N多少钱，2024年最近7天走势，今日出价，今日竞价，GP10N批发/采购报价，GP10N行情走势销售排行榜，GP10N报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
GP10N | SINTERED GLASS PASSIVATED JUNCTION RECTIFIER SINTEREDGLASSPASSIVATEDJUNCTIONRECTIFIER FEATURES *GPRC(GlassPassivatedRectifierChip)inside *Glasspassivatedcavity-freejunction *CapableofmeetingenvironmentalstandardsofMIL-S-19500 *1.0AmpereoperationatTA=75oCand55oCwithnothermalrunaway *Typical | ZOWIEZOWIE 智威智威科技股份有限公司 |  |   |
GP10N | GLASS PASSIVATED JUNCTION RECTIFIER ReverseVoltage-50to1600VoltsForwardCurrent-1.0Ampere FEATURES ♦PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ♦Hightemperaturemetallurgicallybondedconstruction ♦Glasspassivatedcavity-freejunction ♦Capableofmeetingenvironmenta | GE GE Industrial Company |  | |
GP10N | Glass Passivated Junction Rectifiers Features •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 •Hightemperaturemetallurgicallybondedconstruction •Cavity-freeglasspassivatedjunction •CapableofmeetingenvironmentalstandardsofMIL-S-19500 •1.0AmpereoperationatTA=75°Cand55°Cwith | VishayVishay Siliconix 威世科技 |  | |
GP10N | Glass Passivated Junction Rectifier 文件：77.3 Kbytes Page：4 Pages | VishayVishay Siliconix 威世科技 | | |
10 A - 410 V internally clamped IGBT Description ThisIGBTutilizestheadvancedPowerMESH™ processresultinginanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior.Thebuiltincollector-gateZenerexhibits averypreciseactiveclampingwhilethegateemitterZenersuppliesanESDprotection. Feat | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  | | |
N-CHANNEL 10A - 600V - TO-220 Low Drop PowerMESH TM IGBT Description Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH™IGBTs,withoutstandingperformances.ThesuffixSidentifiesafamilyoptimizedachieveminimumon-voltagedropforlowfrequencya | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH IGBT Description Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH™IGBTs,withoutstandingperformances.Thesuffix“K”identifiesafamilyoptimizedforhighfrequencymotorcontrolapplicationswit | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-CHANNEL 10A - 600V - TO-220/TO-220FP/D2PAK PowerMESH TM IGBT 文件：387.24 Kbytes Page：13 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-CHANNEL 10A - 600V - TO-220/TO-220FP/D2PAK PowerMESH TM IGBT 文件：387.24 Kbytes Page：13 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-channel 10A - 600V - TO-220 Very fast PowerMESH TM IGBT 文件：272.72 Kbytes Page：13 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-channel 10A - 600V - TO-220 Very fast PowerMESH IGBT 文件：315.32 Kbytes Page：13 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-channel 600V - 10A - TO-220 - D2PAK Very fast PowerMESH TM IGBT 文件：453.39 Kbytes Page：15 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-channel 600V - 10A - TO-220 - D2PAK - TO-220FP very fast PowerMESH IGBT 文件：410.77 Kbytes Page：17 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-channel 600V - 10A - D2PAK / TO-220 / DPAK Short circuit rated PowerMESH TM IGBT 文件：599.36 Kbytes Page：17 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH TM IGBT 文件：526.13 Kbytes Page：17 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
10 A, 600 V fast IGBT 文件：1.27233 Mbytes Page：18 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
包装：带盒（TB） 描述：DIODE GEN PURPOSE DO204AL 分立半导体产品 二极管 - 整流器 - 单 | Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division |  | | |
包装：卷带（TR） 描述：DIODE GEN PURPOSE DO204AL 分立半导体产品 二极管 - 整流器 - 单 | Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division | | |
GP10N产品属性
- 类型
描述
- 型号
GP10N
- 制造商
General Instruments
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
21+ROHS |
TO-220AB |
26000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
ST |
2023+ |
TO220 |
3872 |
全新原厂原装产品、公司现货销售 |
|||
ST/意法半导体 |
22+ |
TO-220 |
8000 |
终端免费提供样品 可开13%增值税发票 |
|||
VISHAY/威世 |
23+ |
DO-41 |
12000 |
||||
ST |
1926+ |
TO-220FP |
6852 |
只做原装正品现货!或订货假一赔十! |
|||
VISHAY/威世 |
23+ |
NA/ |
15250 |
原装现货,当天可交货,原型号开票 |
|||
ST |
23+ |
TO-220 |
65480 |
||||
23+ |
N/A |
90650 |
正品授权货源可靠 |
||||
VISHAY/威世 |
22+21+ |
DO-41 |
12000 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
|||
ST |
1305+ |
TO-220 |
12000 |
公司特价原装现货 |
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- GP103G4F
- GP101B0M
- GP1007
- GP1006
- GP1005
- GP1003
- GP1002
- GP1001
- GP0DD00007
- GP08G-E3/73
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DdatasheetPDF页码索引
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