SchottkyBarrierDiodesTMForMixersandDetectors

DESCRIPTION SchottkyBarrierdevicesarecurrentlyavailableinsinglebeamlead,dual“T”,ringquadandbridgequadconfigurations.Devicesareavailableinmonolithicformforhybridapplicationsaswellasinhermeticornon-hermeticpackages.Monolithicdevicesarerecommendedforhighestfre

RS-232/423LowCap,#24-8c,FPO,O/AFoilBraid,PVCJkt,CM

ProductDescription ComputerEIARS-232/423Cable,24AWGstranded(7x32)tinnedcopperconductors,Datalene®insulation,overallBeldfoil®(100coverage)+tinned copperbraidshield(65coverage),drainwire,PVCjacket.

DualP-ChannelEnhancementModeMOSFET

Features •-20V/-3.5A,RDS(ON)=45mΩ(typ.)@VGS=-4.5V -2.9A,RDS(ON)=52mΩ(typ.)@VGS=-3.0V -2.6A,RDS(ON)=60mΩ(typ.)@VGS=-2.7V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SOP-8Package Applications •PowerManagementinNoteb

DualP-ChannelEnhancementModeMOSFET

Features •-20V/-3.5A,RDS(ON)=45mΩ(typ.)@VGS=-4.5V -2.9A,RDS(ON)=52mΩ(typ.)@VGS=-3.0V -2.6A,RDS(ON)=60mΩ(typ.)@VGS=-2.7V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SOP-8Package Applications •PowerManagementinNoteb

DualP-ChannelEnhancementModeMOSFET

Features •-20V/-3.5A,RDS(ON)=45mΩ(typ.)@VGS=-4.5V -2.9A,RDS(ON)=52mΩ(typ.)@VGS=-3.0V -2.6A,RDS(ON)=60mΩ(typ.)@VGS=-2.7V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SOP-8Package Applications •PowerManagementinNoteb

HystereticBoost-Buck(cuk)LEDDriverIC

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