MinisizeofDiscretesemiconductorelements

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RS232/423LowCap,#24-7c,FPE,O/AFoilBraid,PVCJkt,CM

ProductDescription ComputerEIARS-232/423Cable,24AWGstranded(7x32)tinnedcopperconductors,Datalene®insulation,overallBeldfoil®(100coverage)+tinned copperbraidshield(65coverage),drainwire,PVCjacket.

DualEnhancementModeMOSFET(N-andP-Channel)

Features •N-Channel 20V/15A,RDS(ON)=12mΩ(typ.)@VGS=10V RDS(ON)=17mΩ(typ.)@VGS=4.5V •P-Channel -20V/-6A,RDS(ON)=30mΩ(typ.)@VGS=-4.5V RDS(ON)=45mΩ(typ.)@VGS=-2.5V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •Reliable

DualEnhancementModeMOSFET(N-andP-Channel)

Features •N-Channel 20V/15A,RDS(ON)=12mΩ(typ.)@VGS=10V RDS(ON)=17mΩ(typ.)@VGS=4.5V •P-Channel -20V/-6A,RDS(ON)=30mΩ(typ.)@VGS=-4.5V RDS(ON)=45mΩ(typ.)@VGS=-2.5V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •Reliable

DualEnhancementModeMOSFET(N-andP-Channel)

Features •N-Channel 20V/9A, RDS(ON)=12mΩ(typ.)@VGS=4.5V RDS(ON)=18mΩ(typ.)@VGS=2.5V •P-Channel -20V/-6A, RDS(ON)=30mΩ(typ.)@VGS=-4.5V RDS(ON)=50mΩ(typ.)@VGS=-2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFree

SimpleDriveRequirement,FullBridgeApplicationonLCDMonitorInverter

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