| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=40A@TC=25℃ ·DrainSourceVoltage- :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.21Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  |   | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=40A@TC=25℃ ·DrainSourceVoltage- :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.23Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
PolarPowerMOSFETHiPerFET 文件：124.01 Kbytes Page：4 Pages | IXYS IXYS Integrated Circuits Division |  | | |
PolarPowerMOSFETHiPerFET 文件：118.79 Kbytes Page：4 Pages | IXYS IXYS Integrated Circuits Division | | | |
PolarPowerMOSFETHiPerFET 文件：120.66 Kbytes Page：4 Pages | IXYS IXYS Integrated Circuits Division | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS/艾赛斯 |
TO-264 |
265209 |
假一罚十原包原标签常备现货! |
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IXYS-艾赛斯 |
24+25+/26+27+ |
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IXYS |
23+ |
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69868 |
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12300 |
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85600 |
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最新 |
2000 |
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LITTELFUSE |
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25 |
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IXYS/艾赛斯 |
22+ |
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25000 |
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IXYS/艾赛斯 |
23+ |
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10000 |
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IXYS |
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TO-264AA(IXFK) |
30000 |
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