High-SpeedSwitchingUsePchPowerMOSFET

Features •Drivevoltage:4V •VDSS:–30V •rDS(ON)(max):12.3mΩ •ID:–70A •IntegratedFastRecoveryDiode(TYP.):70ns Applications Motorcontrol,Lampcontrol,Solenoidcontrol,DC-DCconverters,etc.

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=70A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=12mΩ(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

HIGH-SPEEDSWITCHINGUSE

●4VDRIVE ●VDSS.................................................................................30V ●rDS(ON)(MAX).............................................................12mΩ ●ID........................................................................................70A ●Integr

NchPOWERMOSFETHIGH-SPEEDSWITCHINGUSE

●4VDRIVE ●VDSS.................................................................................30V ●rDS(ON)(MAX).............................................................12mΩ ●ID........................................................................................70A ●Integr

MITSUBISHINchPOWERMOSFET

●4VDRIVE ●VDSS.................................................................................30V ●rDS(ON)(MAX).............................................................12mΩ ●ID........................................................................................70A ●Integr