位置：首页 > IC中文资料第6314页 > FSYE430D1
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
FSYE430D1 | RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilhasdevelopeda seriesofRadiationHardenedMOSFETsspecifically designedforcommercialandmilitaryspaceapplications. EnhancedPowerMOSFETimmunitytoSingleEventEffects (SEE),SingleEventGateRupture(SEGR)inparticular,is combinedwith | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |  |   |
2A,500V,2.50Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
3A,500V,2.70Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | |
FSYE430D1产品属性
- 类型
描述
- 型号
FSYE430D1
- 制造商
INTERSIL
- 制造商全称
Intersil Corporation
- 功能描述
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FABRIMEX |
24+25+/26+27+ |
车规-电源模块 |
3280 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
FSYE430D1芯片相关品牌
FSYE430D1规格书下载地址
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FSYE430D1数据表相关新闻
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优势渠道
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https://hch01.114ic.com/
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原厂原包装绝无虚假
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DdatasheetPDF页码索引
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