位置：首页 > IC中文资料第6245页 > FSS913A0D3
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
FSS913A0D3 | 10A,-100V,0.280Ohm,RadiationHardened,SEGRResistant,P-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |  |   |
7A,-100V,0.300Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
RadiationHardened,SEGRResistantP-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombin | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | |
FSS913A0D3产品属性
- 类型
描述
- 型号
FSS913A0D3
- 制造商
INTERSIL
- 制造商全称
Intersil Corporation
- 功能描述
10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ZETEX |
2016+ |
SOT23-5 |
6000 |
全新原装现货,量大价优,公司可售样! |
|||
MURATA-村田 |
24+25+/26+27+ |
车规-滤波器 |
7652 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
MU |
23+ |
6800 |
专注配单,只做原装进口现货 |
||||
MU |
23+ |
6800 |
专注配单,只做原装进口现货 |
||||
MURATA/村田 |
18+ |
SMD |
288000 |
原装正品价格优势 |
|||
M&G(晨光文具) |
21+ |
6931747124015 |
4600 |
中国航天工业部战略合作伙伴行业领导者 |
|||
ZETEX |
2017+ |
SOT23-5 |
32568 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
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FSS913A0D3规格书下载地址
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原厂原包装绝无虚假
2020-6-3FSU05B60
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2019-11-14
DdatasheetPDF页码索引
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