位置：首页 > IC中文资料第6245页 > FSS23A4R
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
FSS23A4R | 7A,250V,0.460Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |  |   |
7A,250V,0.460Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
7A,250V,0.460Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
7A,250V,0.460Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
7A,250V,0.460Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
5A,250V,0.480Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
5A,250V,0.480Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | |
FSS23A4R产品属性
- 类型
描述
- 型号
FSS23A4R
- 制造商
INTERSIL
- 制造商全称
Intersil Corporation
- 功能描述
7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SANYO/三洋 |
21+ROHS |
SOP-8 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
SANYO |
1742+ |
SOP-8 |
98215 |
只要网上有绝对有货!只做原装正品! |
|||
SANYO |
23+ |
SOP8 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
SANYO/三洋 |
SOP-8 |
265209 |
假一罚十原包原标签常备现货! |
||||
SANYO三洋 |
2020+ |
SOP-8 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
FABRIMEX |
24+25+/26+27+ |
车规-电源模块 |
3280 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
SANYO/三洋 |
23+ |
SOP-8 |
24190 |
原装正品代理渠道价格优势 |
|||
SANYO/三洋 |
20+ |
SOP-8 |
43000 |
原装优势主营型号-可开原型号增税票 |
|||
22+ |
SOP |
2700 |
全新原装自家现货优势! |
||||
23+ |
SOP/8 |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
FSS23A4R芯片相关品牌
FSS23A4R规格书下载地址
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2020-11-13FSX027WF 假一罚十
原厂原包装绝无虚假
2020-6-3FSU05B60
FSU05B60，全新原装当天发货或门市自取0755-82732291.
2019-11-14
DdatasheetPDF页码索引
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