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型号	功能描述	生产厂家&企业
FSS13	1 Amp. Surface Mounted Schottky Barrier Rectifier [FAGOR] 1Amp.SurfaceMountedSchottkyBarrierRectifier •MetalSiliconJunction,majoritycarrierconduction •Highcurrentcapability,lowforwardvoltagedrop •Guardringforovervoltageprotection •Lowpowerloss,highefficiency •Highsurgecapability •Plasticmaterialcarries	ETCList of Unclassifed Manufacturers 未分类制造商
FSS130D	11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社
FSS130D1	11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社
FSS130D3	11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社
FSS130R	11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社
FSS130R1	11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社
FSS130R3	11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社
FSS130R4	11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社
FSS131	Load Switching Applications LoadSwitchingApplications Features •LowON-resistance. •Ultrahigh-speedswitching. •2.5Vdrive.	SANYOSanyo 三洋三洋电机株式会社
FSS132	Load Switching Applications LoadSwitchingApplications Features •LowONresistance. •Ultrahigh-speedswitching. •4Vdrive.	SANYOSanyo 三洋三洋电机株式会社
FSS133	Load Switching Applications LoadSwitchingApplications Features •LowON-resistance. •Ultrahigh-speedswitching. •2.5Vdrive.	SANYOSanyo 三洋三洋电机株式会社
FSS134	DC/DC Converter Applications DC/DCConverterApplications Features •LowONresistance. •Ultrahigh-speedswitching. •4Vdrive.	SANYOSanyo 三洋三洋电机株式会社
FSS138	DC/DC Converter Applications DC/DCConverterApplications Features •LowONresistance. •Ultrahigh-speedswitching. •4Vdrive.	SANYOSanyo 三洋三洋电机株式会社
FSS139	Load Switching Applications LoadSwitchingApplications Features •LowON-resistance. •Ultrahigh-speedswitching. •2.5Vdrive.	SANYOSanyo 三洋三洋电机株式会社
FSS13A0D	2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombin	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社
FSS13A0D1	2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombin	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社
FSS13A0D3	2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombin	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社
FSS13A0R	2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombin	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社
FSS13A0R1	2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombin	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社
FSS13A0R3	2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombin	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社
FSS13A0R4	2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombin	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社
FSS13-1-2-102-DE	包装：散装描述：SWITCH SLIDE SPST 0.4VA MAX @48V 开关滑动开关	Favorelectronics Favorelectronics
FSS13-1-2-201-DE	包装：散装描述：SWITCH SLIDE SPST 0.4VA MAX @48V 开关滑动开关	Favorelectronics Favorelectronics

FSS13产品属性

类型
描述
型号
FSS13
功能描述
1 Amp. Surface Mounted Schottky Barrier Rectifier

FSS13供应商更多...

更新时间：2024-5-5 14:30:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市特顺芯科技有限公司	FSS134-TLSOP8	SANYO	2008++	SOP-8	7200	新进库存/原装	询价
深圳市华睿芯科技有限公司	FSS139-TL-E	SANYO	23+	SOP-8	20000	原厂原装正品现货	询价
千层芯半导体(深圳)有限公司	FSS138-TL-E	SANYO	17+	SOP8	1000	原装正品现货	询价
深圳市芯祺盛科技有限公司	FSS134-TL-E	SANYO/三洋	1925+	SOIC8	45000	真实库存!原装特价!实单必成交!	询价
深圳市高捷芯城科技有限公司	FSS132-TL-E	onsemi(安森美)	23+	-	8498	支持大陆交货,美金交易。原装现货库存。	询价
深圳市得捷芯城科技有限公司	FSS139-MAX-TLD	SANYO/三洋	23+	NA/	11250	原装现货,当天可交货,原型号开票	询价
深圳市惊羽科技有限公司	FSS133-TL-E	ON-安森美	24+25+/26+27+	车规-晶体管	9328	一一有问必回一特殊渠道一有长期订货一备货HK仓库	询价
深圳市跃创芯科技有限公司	FSS134-TL-E	SANYO/三洋	22+	SOIC8	25000	只有原装绝对原装,支持BOM配单!	询价
深圳市纳艾斯科技有限公司	FSS134-TL-E	SANYO	2020+	SOP8	80000	只做自己库存,全新原装进口正品假一赔百,可开13%增	询价
中天科工半导体（深圳）有限公司	FSS132-TL-E	SANYO/三洋	20+	SOP-8	43000	原装优势主营型号-可开原型号增税票	询价