位置：首页 > IC中文资料第6245页 > FSPYE230R3
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
FSPYE230R3 | RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |  |   |
RadiationHardened,SEGRResistantN-ChannelPowerMOSFET IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
RadiationHardened,SEGRResistantN-ChannelPowerMOSFET IntersilStar*PowerRadHard MOSFETshavebeenspecifically developedforhighperformance applicationsinacommercialor militaryspaceenvironment. Star*PowerMOSFETsofferthesystemdesignerboth extremelylowrDS(ON)andGateChargeallowingthe developmentoflowlossPowerSubsystem | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
5A,200V,0.460Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs IntersilStar*Power™RadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Sta | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | |
FSPYE230R3产品属性
- 类型
描述
- 型号
FSPYE230R3
- 制造商
INTERSIL
- 制造商全称
Intersil Corporation
- 功能描述
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FSC |
2016+ |
DIP8 |
3500 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
FSC |
2020+ |
DIP8 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
FSC/ON |
23+ |
原包装原封□□ |
9477 |
原装进口特价供应QQ1304306553更多详细咨询库存 |
|||
FSC |
2016+ |
DIP8 |
6528 |
只做原装正品现货!或订货 |
|||
DIP8 |
21+ |
FAIRCHILD |
47 |
原装现货假一赔十 |
|||
F |
05+ |
原厂原装 |
4293 |
只做全新原装真实现货供应 |
|||
Fairchild |
23+ |
8-LSOP |
9526 |
||||
ON现货 |
2022+ |
8-SMD,鸥翼 |
350000 |
专注工业、军工级别芯片,十五年优质供应商 |
|||
FAIRCHILD/仙童 |
2048+ |
DIP8 |
9852 |
只做原装正品现货!或订货假一赔十! |
|||
DIP8 |
14+ |
FAIRCHILD |
47 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
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FSPYE230R3规格书下载地址
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DdatasheetPDF页码索引
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