位置：首页 > IC中文资料第6245页 > FSL923A0D
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
FSL923A0D | 5A,-200V,0.670Ohm,RadiationHardened,SEGRResistant,P-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |  |   |
5A,-200V,0.670Ohm,RadiationHardened,SEGRResistant,P-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
5A,-200V,0.670Ohm,RadiationHardened,SEGRResistant,P-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
5A,-200V,0.670Ohm,RadiationHardened,SEGRResistant,P-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
7A,-200V,0.650Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
7A,-200V,0.650Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
RadiationHardened,SEGRResistantP-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombin | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | |
FSL923A0D产品属性
- 类型
描述
- 型号
FSL923A0D
- 制造商
INTERSIL
- 制造商全称
Intersil Corporation
- 功能描述
5A, -200V, 0.670 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOKO |
0430+ |
SMD |
340 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
TOKO |
23+ |
SMD |
20000 |
专业电感电容电阻一站式配套齐可售样品 |
|||
23+ |
原厂封装 |
11888 |
专做原装正品,假一罚百! |
||||
FSC |
23+ |
TO-263 |
4569 |
专业优势供应 |
|||
- |
23+ |
NA/ |
3300 |
原装现货,当天可交货,原型号开票 |
|||
IR |
2018+ |
TO262 |
6528 |
只做原装正品假一赔十!只要网上有上百分百有库存放心 |
|||
TOKO |
2021+ |
SMD |
6037 |
百分百原装正品 |
|||
- |
TO-262 |
265209 |
假一罚十原包原标签常备现货! |
||||
TOKO-东光 |
24+25+/26+27+ |
车规-被动器件 |
96800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
TOKO |
22+ |
SMD |
5000 |
全新原装现货!价格优惠!可长期 |
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FSL923A0D规格书下载地址
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2019-4-2
DdatasheetPDF页码索引
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