位置：首页 > IC中文资料第6244页 > FSL913A0R
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
FSL913A0R | 7A,-100V,0.300Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |  |   |
7A,-100V,0.300Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
7A,-100V,0.300Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
7A,-100V,0.300Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
7A,-100V,0.300Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
10A,-100V,0.280Ohm,RadiationHardened,SEGRResistant,P-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
10A,-100V,0.280Ohm,RadiationHardened,SEGRResistant,P-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
RadiationHardened,SEGRResistantP-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombin | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | |
FSL913A0R产品属性
- 类型
描述
- 型号
FSL913A0R
- 制造商
INTERSIL
- 制造商全称
Intersil Corporation
- 功能描述
7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
22+ |
TO262 |
6000 |
终端可免费供样,支持BOM配单 |
|||
TOKO |
2017+ |
2520-100K |
56787 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
|||
TOKO |
20+ |
电感器 |
682000 |
电感原装优势主营型号-可开原型号增税票 |
|||
23+ |
N/A |
49200 |
正品授权货源可靠 |
||||
TOKO |
2021+ |
SMD |
6037 |
百分百原装正品 |
|||
TOKO |
21+ROHS |
379585 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
- |
TO-262 |
265209 |
假一罚十原包原标签常备现货! |
||||
- |
23+ |
TO-262 |
50000 |
全新原装正品现货,支持订货 |
|||
IR |
23+ |
TO262 |
8000 |
只做原装现货 |
|||
FSC |
23+ |
TO-263 |
4569 |
专业优势供应 |
FSL913A0R芯片相关品牌
FSL913A0R规格书下载地址
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