位置：首页 > IC中文资料第6297页 > FSL13A0D
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
FSL13A0D | 9A,100V,0.180Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |  |   |
9A,100V,0.180Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
9A,100V,0.180Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
9A,100V,0.180Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
2A,100V,0.170Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombin | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
2A,100V,0.170Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombin | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | |
FSL13A0D产品属性
- 类型
描述
- 型号
FSL13A0D
- 制造商
INTERSIL
- 制造商全称
Intersil Corporation
- 功能描述
9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Fairchild |
20+ |
原装 |
65790 |
原装优势主营型号-可开原型号增税票 |
|||
Fairchild/ON |
21+ |
8MDIP |
13880 |
公司只售原装,支持实单 |
|||
FAIRCHILD |
13+ |
DIP-8 |
37 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Fairchild(飞兆/仙童) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ISL |
23+ |
65480 |
|||||
onsemi(安森美) |
2021+ |
DIP-8 |
499 |
||||
FAIRCHILD/仙童 |
21+ |
DIP8 |
3270 |
原装现货假一赔十 |
|||
onsemi |
22+/23+ |
DIP-8 |
9800 |
原装进口公司现货假一赔百 |
|||
onsemi |
21+ |
8-DIP |
15000 |
正规渠道/品质保证/原装正品现货 |
|||
ONSemiconductor |
23+ |
8-MDIP |
66800 |
进口原装一级分销 |
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2019-4-2
DdatasheetPDF页码索引
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