HIGH-SPEEDSWITCHINGUSE

HIGH-SPEEDSWITCHINGUSE •VDSS................................................................................250V •rDS(ON)(MAX)..............................................................0.25Ω •ID.......................................................................................

NchPOWERMOSFETHIGH-SPEEDSWITCHINGUSE

HIGH-SPEEDSWITCHINGUSE •VDSS................................................................................250V •rDS(ON)(MAX)..............................................................0.25Ω •ID.......................................................................................

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=16A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.25Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=16A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.31Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

NchPOWERMOSFETHIGH-SPEEDSWITCHINGUSE

HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................250V ●rDS(ON)(MAX)..............................................................0.31Ω ●ID.......................................................................................