位置：首页 > IC中文资料第10147页 > FRF
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
FRF | Circular Commercial Aircraft Military Aircraft 文件：80.87 Kbytes Page：1 Pages | ITTITT Industries ITT工业 |  |   |
FRD - Low Forward Voltage Drop FEATURES *FullyMoldedIsolation *DualDiodes–AnodeCommon *Ultra–FastRecovery *LowForwardVoltageDrop *HighSurgeCapability *200Voltsthru600VoltsTypesAvailable | NIECNihon Inter Electronics Corporation Nihon Inter Electronics Corporation |  | | |
FAST RECOVERY RECTIFIERS Features Glasspassivatedchipjunctions Lowreversecurrentoperation LeadfreeincompliancewithEURoHS 2011/65/EUdirective HighJunctionTemperature HighForwardSurgeCapability Fastrecoverytimeforswitching | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 |  | | |
FAST RECOVERY RECTIFIERS Features Glasspassivatedchipjunctions Lowreversecurrentoperation LeadfreeincompliancewithEURoHS 2011/65/EUdirective HighJunctionTemperature HighForwardSurgeCapability Fastrecoverytimeforswitching | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | | | |
FAST RECOVERY RECTIFIERS Features Glasspassivatedchipjunctions Lowreversecurrentoperation LeadfreeincompliancewithEURoHS 2011/65/EUdirective HighJunctionTemperature HighForwardSurgeCapability Fastrecoverytimeforswitching | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | | | |
FAST RECOVERY RECTIFIERS Features Glasspassivatedchipjunctions Lowreversecurrentoperation LeadfreeincompliancewithEURoHS 2011/65/EUdirective HighJunctionTemperature HighForwardSurgeCapability Fastrecoverytimeforswitching | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | | | |
FAST RECOVERY RECTIFIERS Features Glasspassivatedchipjunctions Lowreversecurrentoperation LeadfreeincompliancewithEURoHS 2011/65/EUdirective HighJunctionTemperature HighForwardSurgeCapability Fastrecoverytimeforswitching | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | | | |
FAST RECOVERY RECTIFIERS Features Glasspassivatedchipjunctions Lowreversecurrentoperation LeadfreeincompliancewithEURoHS 2011/65/EUdirective HighJunctionTemperature HighForwardSurgeCapability Fastrecoverytimeforswitching | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | | | |
25A, 100V, 0.07 Ohm, Rad Hard, N-Channel Power MOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |  | | |
25A, 100V, 0.07 Ohm, Rad Hard, N-Channel Power MOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
25A, 100V, 0.07 Ohm, Rad Hard, N-Channel Power MOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
23A, 200V, 0.115 Ohm, Rad Hard, N-Channel Power MOSFETs Features •23A,200V,RDS(on)=0.115Ω •SecondGenerationRadHardMOSFETResultsFromNewDesignConcepts •Gamma -MeetsPre-RadSpecificationsto100KRAD(Si) -DefinedEndPointSpecsat300KRAD(Si)and1000KRAD(Si) -PerformancePermitsLimitedUseto3000KRAD(Si) •Gamma | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
23A, 200V, 0.115 Ohm, Rad Hard, N-Channel Power MOSFETs Features •23A,200V,RDS(on)=0.115Ω •SecondGenerationRadHardMOSFETResultsFromNewDesignConcepts •Gamma -MeetsPre-RadSpecificationsto100KRAD(Si) -DefinedEndPointSpecsat300KRAD(Si)and1000KRAD(Si) -PerformancePermitsLimitedUseto3000KRAD(Si) •Gamma | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
23A, 200V, 0.115 Ohm, Rad Hard, N-Channel Power MOSFETs Features •23A,200V,RDS(on)=0.115Ω •SecondGenerationRadHardMOSFETResultsFromNewDesignConcepts •Gamma -MeetsPre-RadSpecificationsto100KRAD(Si) -DefinedEndPointSpecsat300KRAD(Si)and1000KRAD(Si) -PerformancePermitsLimitedUseto3000KRAD(Si) •Gamma | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
17A, 250V, 0.185 Ohm, Rad Hard, N-Channel Power MOSFETs Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessr | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
17A, 250V, 0.185 Ohm, Rad Hard, N-Channel Power MOSFETs Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessr | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
17A, 250V, 0.185 Ohm, Rad Hard, N-Channel Power MOSFETs Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessr | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
9A, 500V, 0.615 Ohm, Rad Hard, N-Channel Power MOSFETs Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessr | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
9A, 500V, 0.615 Ohm, Rad Hard, N-Channel Power MOSFETs Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessr | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
9A, 500V, 0.615 Ohm, Rad Hard, N-Channel Power MOSFETs Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessr | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
23A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFETs Description IntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutron | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
23A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFETs Description IntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutron | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
23A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFETs Description IntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutron | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
14A, -200V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
14A, -200V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
14A, -200V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
Switchmode Full Plastic Dual Fast Recovery Power Rectifiers 文件：68.3 Kbytes Page：3 Pages | MOSPEC MOSPEC |  | | |
Switchmode Full Plastic Dual Fast Recovery Power Rectifiers 文件：68.3 Kbytes Page：3 Pages | MOSPEC MOSPEC | | | |
Switchmode Full Plastic Dual Fast Recovery Power Rectifiers 文件：68.3 Kbytes Page：3 Pages | MOSPEC MOSPEC | | | |
Switchmode Full Plastic Dual Fast Recovery Power Rectifiers 文件：68.3 Kbytes Page：3 Pages | MOSPEC MOSPEC | | | |
Switchmode Full Plastic Dual Fast Recovery Power Rectifiers 文件：68.7 Kbytes Page：2 Pages | MOSPEC MOSPEC | | | |
Switchmode Full Plastic Dual Fast Recovery Power Rectifiers 文件：68.7 Kbytes Page：2 Pages | MOSPEC MOSPEC | | | |
Switchmode Full Plastic Dual Fast Recovery Power Rectifiers 文件：68.7 Kbytes Page：2 Pages | MOSPEC MOSPEC | | | |
Switchmode Full Plastic Dual Fast Recovery Power Rectifiers 文件：68.7 Kbytes Page：2 Pages | MOSPEC MOSPEC | | | |
Isolation 10 AMPS. Glass Passivated Fast Recovery Rectifiers 文件：64.12 Kbytes Page：2 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 |  | | |
Isolated 10 AMPS. Glass Passivated Fast Recovery Rectifiers 文件：333.34 Kbytes Page：2 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
Isolated 10.0AMP.Glass Passivated Fast Recovery Rectifiers 文件：227.25 Kbytes Page：2 Pages | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 |  | | |
Isolated 10 AMPS. Glass Passivated Fast Recovery Rectifiers 文件：333.34 Kbytes Page：2 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
Isolated 10 AMPS. Glass Passivated Fast Recovery Rectifiers 文件：333.34 Kbytes Page：2 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
Isolation 10 AMPS. Glass Passivated Fast Recovery Rectifiers 文件：64.12 Kbytes Page：2 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
Isolated 10.0AMP.Glass Passivated Fast Recovery Rectifiers 文件：227.25 Kbytes Page：2 Pages | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | | | |
Isolation 10 AMPS. Glass Passivated Fast Recovery Rectifiers 文件：64.12 Kbytes Page：2 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
Isolated 10 AMPS. Glass Passivated Fast Recovery Rectifiers 文件：333.34 Kbytes Page：2 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
Isolated 10.0AMP.Glass Passivated Fast Recovery Rectifiers 文件：227.25 Kbytes Page：2 Pages | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | | | |
Isolation 10 AMPS. Glass Passivated Fast Recovery Rectifiers 文件：64.12 Kbytes Page：2 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
Isolated 10 AMPS. Glass Passivated Fast Recovery Rectifiers 文件：333.34 Kbytes Page：2 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
Isolated 10.0AMP.Glass Passivated Fast Recovery Rectifiers 文件：227.25 Kbytes Page：2 Pages | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | | | |
Switchmode Full Plastic Dual Fast Recovery Power Rectifiers 文件：62.94 Kbytes Page：3 Pages | MOSPEC MOSPEC | | | |
Isolation 10 AMPS. Glass Passivated Fast Recovery Rectifiers 文件：64.12 Kbytes Page：2 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
Isolated 10 AMPS. Glass Passivated Fast Recovery Rectifiers 文件：333.34 Kbytes Page：2 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
Isolated 10.0AMP.Glass Passivated Fast Recovery Rectifiers 文件：227.25 Kbytes Page：2 Pages | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | | | |
Isolation 10 AMPS. Glass Passivated Fast Recovery Rectifiers 文件：64.12 Kbytes Page：2 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
Isolated 10 AMPS. Glass Passivated Fast Recovery Rectifiers 文件：333.34 Kbytes Page：2 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
Isolated 10.0AMP.Glass Passivated Fast Recovery Rectifiers 文件：227.25 Kbytes Page：2 Pages | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | | | |
Isolation 10 AMPS. Glass Passivated Fast Recovery Rectifiers 文件：64.12 Kbytes Page：2 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
Isolated 10 AMPS. Glass Passivated Fast Recovery Rectifiers 文件：333.34 Kbytes Page：2 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
Isolated 10.0AMP.Glass Passivated Fast Recovery Rectifiers 文件：227.25 Kbytes Page：2 Pages | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | | | |
Switchmode Full Plastic Dual Fast Recovery Power Rectifiers 文件：62.94 Kbytes Page：3 Pages | MOSPEC MOSPEC | | | |
Switchmode Full Plastic Dual Fast Recovery Power Rectifiers 文件：62.94 Kbytes Page：3 Pages | MOSPEC MOSPEC | | | |
Switchmode Full Plastic Dual Fast Recovery Power Rectifiers 文件：62.94 Kbytes Page：3 Pages | MOSPEC MOSPEC | | |
FRF产品属性
- 类型
描述
- 型号
FRF
- 制造商
ITT
- 制造商全称
ITT Industries
- 功能描述
Circular Commercial Aircraft Military Aircraft
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ISL |
05+ |
原厂原装 |
4283 |
只做全新原装真实现货供应 |
|||
NIHON |
22+ |
TO-220 |
100000 |
代理渠道/只做原装/可含税 |
|||
强茂 |
1926+ |
TO-220AC |
6852 |
只做原装正品现货!或订货假一赔十! |
|||
TXGA(特思嘉) |
21+ |
SMD |
4750 |
中国航天工业部战略合作伙伴行业领导者 |
|||
NIEC |
2023+ |
TO220F |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
MITEL |
23+ |
QFP |
9768 |
优势库存 |
|||
NIEC |
22+ |
TO-220F |
5000 |
绝对全新原装现货 |
|||
IR |
23+ |
NA/ |
115240 |
原装现货,当天可交货,原型号开票 |
|||
台产 |
23+ |
TO220 |
28000 |
原装正品 |
|||
GC |
23+ |
TO-220 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
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FRF规格书下载地址
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DdatasheetPDF页码索引
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