型号 功能描述 生产厂家&企业 LOGO 操作
FGPF7N60RUFD

600V,7ARUFIGBTCO-PAK

Description FairchildsInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.ThedeviceisdesignedforMotorapplicationswhereruggednessisarequiredfeature. Features •Highspeedswitching •Lowsaturationvoltage:VCE(sat)=1.95V@IC=7A •Highin

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

600V,7ARUFIGBTCO-PAK

Description FairchildsInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.ThedeviceisdesignedforMotorapplicationswhereruggednessisarequiredfeature. Features •Highspeedswitching •Lowsaturationvoltage:VCE(sat)=1.95V@IC=7A •Highin

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

封装/外壳:TO-220-3 整包 包装:管件 描述:IGBT 600V 14A 41W TO220F 分立半导体产品 晶体管 - UGBT、MOSFET - 单

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

7.4Amps,600VoltsN-CHANNELMOSFET

■DESCRIPTION TheUTC7N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

iscN-ChannelMosfetTransistor

•DESCRITION •Designedforhighefficiencyswitchmodepowersupply. •FEATURES •DrainCurrent–ID=7A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max) •AvalancheEnergySpecified •FastSwitching •SimpleDriveRequirem

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

7Amps竊?00VoltsN-ChannelMOSFET

■Description TheET7N60N-ChannelenhancementmodesilicongatepowerMOSFETisdesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,switchingconverters,solenoid,motordrivers,relaydrivers. ■Features ●RDS(ON)=1.20Ω@VGS=10V ●Lowgatecha

ESTEKEstek Electronics Co. Ltd

Estek Electronics Co. Ltd

ESTEK

7.4Amps,600/650VoltsN-CHANNELPOWERMOSFET

■DESCRIPTION TheUTC7N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinswi

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

7A600VN-channelEnhancementModePowerMOSFET

文件:898.89 Kbytes Page:11 Pages

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

东海半导体江苏东海半导体科技有限公司

WXDH

FGPF7N60RUFD产品属性

  • 类型

    描述

  • 型号

    FGPF7N60RUFD

  • 制造商

    FAIRCHILD

  • 制造商全称

    Fairchild Semiconductor

  • 功能描述

    600V, 7A RUF IGBT CO-PAK

更新时间:2024-5-11 18:06:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD
23+
TO-220F
13638
全新原装
FAIRCHILD/仙童
22+
TO-220F
25000
只做原装进口现货,专注配单
Fairchild/ON
21+
TO220F
13880
公司只售原装,支持实单
FAIRCHILD/仙童
23+
TO-220F
90000
只做原厂渠道价格优势可提供技术支持
FAIRCHILD
2023+
TO-220F
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
FAIRCHILD
1822+
TO-220F
9852
只做原装正品假一赔十为客户做到零风险!!
FAIRCHILD
08+(pbfree)
TO-220F
8866
ON-安森美
24+25+/26+27+
TO-220-3
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
FSC/ON
23+
原包装原封 □□
2423
原装进口特价供应 QQ 1304306553 更多详细咨询 库存
仙童
1746+
TO220
8862
深圳公司现货!特价支持工厂客户!提供样品!

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