型号 功能描述 生产厂家&企业 LOGO 操作
FGB20N6S2

600V,SMPSIISeriesN-ChannelIGBT

GeneralDescription TheFGH20N6S2DFGP20N6S2D,FGB20N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatecharge,plateauvoltageandhighavalanchecapability(UIS). TheseLGCdevicesshortendelaytimes,andre

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

600V,SMPSIISeriesN-ChannelIGBTwithAnti-ParallelStealthTMDiode

GeneralDescription TheFGH20N6S2DFGP20N6S2D,FGB20N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatecharge,plateauvoltageandhighavalanchecapability(UIS). TheseLGCdevicesshortendelaytimes,andre

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

600V,SMPSIISeriesN-ChannelIGBTwithAnti-ParallelStealthDiode

GeneralDescription TheFGH20N6S2DFGP20N6S2D,FGB20N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatecharge,plateauvoltageandhighavalanchecapability(UIS). TheseLGCdevicesshortendelaytimes,andre

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

600V,SMPSIISeriesN-ChannelIGBTwithAnti-ParallelStealthDiode

GeneralDescription TheFGH20N6S2DFGP20N6S2D,FGB20N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatecharge,plateauvoltageandhighavalanchecapability(UIS). TheseLGCdevicesshortendelaytimes,andre

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

600V,SMPSIISeriesN-ChannelIGBTwithAnti-ParallelStealthDiode

GeneralDescription TheFGH20N6S2DFGP20N6S2D,FGB20N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatecharge,plateauvoltageandhighavalanchecapability(UIS). TheseLGCdevicesshortendelaytimes,andre

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FGB20N6S2产品属性

  • 类型

    描述

  • 型号

    FGB20N6S2

  • 功能描述

    IGBT 晶体管 Sgl N-Ch 600V

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2024-4-28 18:09:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD
2023+
SMD
3267
安罗世纪电子只做原装正品货
Fairchild/ON
21+
TO263AB
13880
公司只售原装,支持实单
FAIRCHILD
1822+
TO-263
9852
只做原装正品假一赔十为客户做到零风险!!
FAIRCHIL
23+
TO-263
8600
全新原装现货
FAIRCHILD/仙童
22+
TO-263
25000
只做原装进口现货,专注配单
FAIRCHIL
08+(pbfree)
TO-263
8866
ON/安森美
22+
TO-263
15200
本公司只做原装正品,优势供货渠道!量大可订!
ON-安森美
24+25+/26+27+
TO-263-3
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
FSC
22+
NA
27003
全新原装正品现货
FAIRCHILD
TO-263
68900
原包原标签100%进口原装常备现货!

FGB20N6S2芯片相关品牌

  • 3M
  • AVX
  • GSI
  • MA-COM
  • MARL
  • MORNSUN
  • PAIRUI
  • PCA
  • PF
  • RENESAS
  • TTELEC
  • XFMRS

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