iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=35A@TC=25℃ ·DrainSourceVoltage :VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.0mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

N-ChannelPowerTrenchMOSFET25V,35A,4.0mOHM

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N-ChannelPowerTrench짰MOSFET

文件：314.74 Kbytes Page：6 Pages

Electronic,3C#18StrTC,POins,OS,LSNHJkt300V,Cca

ProductDescription Electronic,3ConductorAWG18TinnedCopper-Stranded,Polyolefin(PO,PE,PP)insulation,Foil(s)orCopperTape(s)shielding,LSZH/FRNCjacket 300V,Cca

SpaceMaker™,3C#18StrTC,POIns,OS,PVCJkt,AWM2937

ProductDescription SpaceMaker™,3Conductor18AWG(41x34)TinnedCopper,POInsulation,OverallBeldfoil®Shield,PVCOuterJacket,AWM2937

Electronic,3C#18StrTC,POins,OS,LSNHJkt300V

ProductDescription Electronic,3ConductorAWG18TinnedCopper-Stranded,Polyolefin(PO,PE,PP)insulation,Foil(s)orCopperTape(s)shielding,LSZH/FRNCjacket 300V

Electronic,3C#18StrTC,POIns,OS,LSZHJkt,CMG

ProductDescription Electronic,3Conductor18AWG(16x30)TinnedCopper,POInsulation,OverallBeldfoil®Shield,LSZHOuterJacket,CMG

Electronic,3C#18StrTC,PEIns,OS,PVCJkt,CM

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