位置:首页 > IC中文资料第5298页 > FDD3
FDD3价格
参考价格:¥1.7405
型号:FDD306P 品牌:Fairchild 备注:这里有FDD3多少钱,2024年最近7天走势,今日出价,今日竞价,FDD3批发/采购报价,FDD3行情走势销售排行榜,FDD3报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
P-Channel 1.8V Specified PowerTrench MOSFET GeneralDescription ThisP-Channel1.8VSpecifiedMOSFETusesFairchild’sadvancedlowvoltagePowerTrenchprocess.Ithasbeenoptimizedforbatterypowermanagement. Features ■–6.7A,–12V.RDS(ON)=28mΩ@VGS=–4.5VRDS(ON)=41mΩ@VGS=–2.5VRDS(ON)=90mΩ@VGS=–1.8V ■Fast | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
P-channel Enhancement Mode Power MOSFET Features VDS=-30V,ID=-20A RDS(ON) | BychipBYCHIP ELECTRONICS CO,. LIMITED 百域芯深圳市百域芯科技有限公司 | |||
ULTRAFAST RECOVERY RECTIFIER DESCRIPTION Plasticpackagehasunderwriterslaboratoryflammability classification94V-0 LeadfreeincomplywithEURoHS2011/65/EUdirectives Lowreverseleakagecurrent Ultrafastrecoverytimeandsoftrecoverycharacteristics Lowrecoveryloss | FS First Silicon Co., Ltd | |||
Dual N & P-Channel PowerTrench MOSFET N-Channel: 80V, 13.9A, 80mOHM P-Channel: -80V, -9.4A, 190mOHM GeneralDescription ThesedualNandP-ChannelenhancementmodePowerMOSFETsareproducedusingFairchildSemiconductor’sadvancedPowerTrench®processthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainsuperiorswitchingperformance. Features Q1:N-Channel | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
80V N-Channel PowerTrench MOSFET GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. Features •10A,80V.RDS(ON)=20mΩ@VGS=10V RDS(ON)=23mΩ@VGS | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=43A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=20mΩ(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-channel Enhancement Mode Power MOSFET Features VDS=100V,ID=40A RDS(ON) | BychipBYCHIP ELECTRONICS CO,. LIMITED 百域芯深圳市百域芯科技有限公司 | |||
80V N-Channel PowerTrench??MOSFET GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. ThisMOSFETfeaturesfasterswitchingandlowergatechangethanotherMOSFETswithcomparableRDS(ON | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
80V N-Channel PowerTrench??MOSFET GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. ThisMOSFETfeaturesfasterswitchingandlowergatechangethanotherMOSFETswithcomparableRDS(ON | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=7.7A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=29mΩ(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
100V N-Channel PowerTrench MOSFET GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. Features •34A,100V.RDS(ON)=32mΩ@VGS=10V RDS(ON)=35mΩ@ | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
N-Channel UltraFET Trench MOSFET 100V, 44A, 28m? Features •rDS(ON)=24mΩ(Typ.),VGS=10V,ID=44A •Qg(tot)=24nC(Typ.),VGS=10V •LowMillerCharge •LowQrrBodyDiode •Optimizedefficiencyathighfrequencies •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Applications •DC/D | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=44A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=28mΩ(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
100V N-Channel PowerTrench MOSFET GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. Features •25A,100V.RDS(ON)=46mΩ@VGS=10VRDS(ON)=51mΩ@VGS=6V •Lowgatecharge | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=25A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=46mΩ(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-Channel PowerTrench MOSFET 100V, 32A, 36m? Features •rDS(ON)=32mΩ(Typ.),VGS=10V,ID=32A •Qg(tot)=18.5nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Applications •DC/DCconvertersandOff-LineUPS •DistributedPowerArchitectur | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
isc N-Channel MOSFET Transistor •DESCRITION •DC-DCConvertersandoff-lineUPS •HighVoltageSynchronousRectifier •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤36mΩ •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-Channel PowerTrench® MOSFET 100V, 32A, 36mΩ Features •rDS(ON)=32mΩ(Typ.),VGS=10V,ID=32A •Qg(tot)=18.5nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 •RoHSCompliant Applications •DC/DCconvertersandOff-LineUPS •Distribut | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
100V N-Channel PowerTrench MOSFET GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. Features •22A,100V.RDS(ON)=64mΩ@VGS=10VRDS(ON)=71mΩ@VGS=6V •Lowgatecharge | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=22A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=64mΩ(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
20V N-Channel PowerTrench MOSFET GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowRDS(ON),fastswitchingspeedandextremelylowRDS(O | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=14.7A@TC=25℃ ·DrainSourceVoltage-VDSS=20V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=9mΩ(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
P-channel Enhancement Mode Power MOSFET Features VDS=-20V,ID=-100A RDS(ON) | BychipBYCHIP ELECTRONICS CO,. LIMITED 百域芯深圳市百域芯科技有限公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=29A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=36mΩ(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=26A@TC=25℃ ·DrainSourceVoltage :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=42mΩ(Max) ·100avalanchetested DESCRIPTION ·motordrive,DC-DCconverter,powerswitch andsolenoiddrive | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-channel Enhancement Mode Power MOSFET Features VDS=150V,ID=40A RDS(ON) | BychipBYCHIP ELECTRONICS CO,. LIMITED 百域芯深圳市百域芯科技有限公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=26A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=42mΩ(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-channel Enhancement Mode Power MOSFET Features VDS=150V,ID=20A RDS(ON) | BychipBYCHIP ELECTRONICS CO,. LIMITED 百域芯深圳市百域芯科技有限公司 | |||
400V N-Channel MOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=2A@TC=25℃ ·DrainSourceVoltage-VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.4Ω(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
400V N-Channel MOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
400V N-Channel MOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=2.5A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.5Ω(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
DESIGN/PROCESS CHANGE NOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
封装/外壳:4-SMD,无引线 功能:启用/禁用 包装:卷带(TR) 描述:XTAL OSC XO 133.0000MHZ CMOS SMD 晶体,振荡器,谐振器 振荡器 | PAMDiodes Incorporated 龙鼎威 | |||
封装/外壳:4-SMD,无引线 功能:启用/禁用 包装:卷带(TR) 描述:XTAL OSC XO 133.3300MHZ CMOS SMD 晶体,振荡器,谐振器 振荡器 | PAMDiodes Incorporated 龙鼎威 | |||
80V N-Channel PowerTrench MOSFET 文件:76.8 Kbytes Page:5 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
80V N-Channel PowerTrench MOSFET 文件:76.8 Kbytes Page:5 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
100V N-Channel PowerTrench MOSFET 文件:68.7 Kbytes Page:5 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
isc N-Channel MOSFET Transistor 文件:346.24 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
100V N-Channel PowerTrench MOSFET 文件:68.7 Kbytes Page:5 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
N-Channel 100-V (D-S) MOSFET 文件:984.84 Kbytes Page:8 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
P-Channel PowerTrench짰 MOSFET -40V, -14A, 64m廓 文件:431.6 Kbytes Page:7 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
N-Channel UltraFET Trench MOSFET 100V, 44A, 28m廓 文件:117.19 Kbytes Page:6 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
N-Channel 100-V (D-S) MOSFET 文件:984.77 Kbytes Page:8 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
N-Channel PowerTrench짰 MOSFET 100V, 32A, 36m廓 文件:426.02 Kbytes Page:11 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
N-Channel PowerTrench짰 MOSFET 文件:426.02 Kbytes Page:11 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
N-Channel 100-V (D-S) MOSFET 文件:984.77 Kbytes Page:8 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
N-Channel PowerTrench MOSFET 文件:335.87 Kbytes Page:6 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
N-Channel PowerTrench MOSFET 100V, 29A, High performance trench technology for extremely low 文件:335.87 Kbytes Page:6 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
N-Channel PowerTrench MOSFET 文件:335.87 Kbytes Page:6 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
isc N-Channel MOSFET Transistor 文件:351.83 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-Channel PowerTrench짰 MOSFET 150V, 26A, 42m廓 文件:270.02 Kbytes Page:9 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
N-Channel 150 V (D-S) MOSFET 文件:1.00464 Mbytes Page:9 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
Power MOSFET 文件:1.07862 Mbytes Page:9 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
N-Channel MOSFET 500V, 2.5A, 2.5? 文件:550.45 Kbytes Page:8 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Power MOSFET 文件:1.07861 Mbytes Page:9 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
N-Channel MOSFET 500V, 2.5A, 2.5? 文件:550.45 Kbytes Page:8 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Power MOSFET 文件:1.07853 Mbytes Page:9 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 |
FDD3产品属性
- 类型
描述
- 型号
FDD3
- 制造商
Cooper Crouse-Hinds
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON |
2020+ |
TO-252 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
FAIRCHILD/仙童 |
22+ |
SOT-252 |
100000 |
代理渠道/只做原装/可含税 |
|||
FAIRCHILD |
TO-2523L(DPAK) |
68900 |
原包原标签100%进口原装常备现货! |
||||
FAIRCHILD/仙童 |
22+ |
SMD |
8550 |
只做原装正品假一赔十!正规渠道订货! |
|||
FAIRCHILD/仙童 |
23+ |
8477 |
全新原装数量均有多电话咨询 |
||||
ON(安森美) |
2023+ |
TO-252 |
4550 |
全新原装正品 |
|||
FSC |
2016+ |
SMD |
8477 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
FAIRCHIL |
24+ |
TO-252 |
90000 |
一级代理商进口原装现货、价格合理 |
|||
ON |
24+ |
DPAK-3 / TO-252-3 |
25000 |
ON全系列可订货 |
|||
TI |
2022+ |
SOT23 |
6000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
FDD3规格书下载地址
FDD3参数引脚图相关
- HDD
- h3000
- h20r120
- gps模块
- gpib
- GL850G
- gfd
- g508
- g500
- g221
- fx57
- FTTH
- fr107
- fpga开发板
- FPC连接器
- fp6290
- foxconn
- fml22s
- flotherm
- finder继电器
- FDD5690
- FDD5680
- FDD5670
- FDD5614
- FDD5612
- FDD5353
- FDD4685
- FDD4243_F085
- FDD4243
- FDD4141-CUTTAPE
- FDD4141_F085
- FDD4141
- FDD3N50NZTM
- FDD3N40TM
- FDD3N40
- FDD390N15ALZ
- FDD390N15A
- FDD3860
- FDD3706
- FDD3690
- FDD3682_F085
- FDD3682
- FDD3680
- FDD3672_F085
- FDD3672
- FDD3670
- FDD3580
- FDD3570
- FDD3510H
- FDD306P
- FDD26AN06A0_F085
- FDD2670
- FDD2612
- FDD2582
- FDD2572_F085
- FDD2572
- FDD2570
- FDD2512
- FDD24Z3A2-E2
- FDD24AN06LA0_F085
- FDD20AN06A0_F085
- FDD18N20LZ
- FDD16AN08A0_F085
- FDD16AN08A0
- FDD1600N10ALZD
- FDD1600N10ALZ
- FDD15-12D1
- FDD14AN06LA0_F085
- FDD13AN06A0_F085
- FDD13AN06A0
- FDD120AN15A0-CUTTAPE
- FDD120AN15A0_F085
- FDD12
- FDD05
- FDD03U
- FDC-9SF
- FDC-9PF
- FDC9267
- FDC9266
- FDC9216
- FDC8886
- FDC8884
- FDC8878
- FDC8602
- FDC8601
- FDC855N
FDD3数据表相关新闻
FDD9509L-F085场效应管(MOSF
FDD9509L-F085场效应管(MOSF
2023-4-12FDD8778
MOSFET25VN-ChannelPowerTrenchMOSFET
2022-3-8FDC658AP
FDC658AP
2021-7-23FDD14AN06全新原装现货
FDD14AN06,全新原装现货0755-82732291当天发货或门市自取.
2021-1-7FDC658AP公司原装现货
瀚佳科技(深圳)有限公司专业进口电子元器件代理商
2019-11-8FDD6296_NL全新原装现货
可立即发货
2019-9-24
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80