位置：首页 > IC中文资料 > EN29LV800T90TI
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
EN29LV800T90TI | 8Megabit(1024Kx8-bit/512Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only GENERALDESCRIPTION TheEN29LV800isan8-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas1,048,576bytesor524,288words.Anybytecanbeprogrammedtypicallyin10µs.TheEN29LV800features3.0Vvoltagereadandwriteoperation,withaccesstimesasfastas5 | EON Eon Silicon Solution Inc. |  |   |
8Megabit(1024Kx8-bit/512Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only GENERALDESCRIPTION TheEN29LV800isan8-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas1,048,576bytesor524,288words.Anybytecanbeprogrammedtypicallyin10µs.TheEN29LV800features3.0Vvoltagereadandwriteoperation,withaccesstimesasfastas5 | EON Eon Silicon Solution Inc. | | | |
8Megabit(1024Kx8-bit/512Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only GENERALDESCRIPTION TheEN29LV800isan8-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas1,048,576bytesor524,288words.Anybytecanbeprogrammedtypicallyin10µs.TheEN29LV800features3.0Vvoltagereadandwriteoperation,withaccesstimesasfastas5 | EON Eon Silicon Solution Inc. | | | |
8Megabit(1024Kx8-bit/512Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only GENERALDESCRIPTION TheEN29LV800isan8-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas1,048,576bytesor524,288words.Anybytecanbeprogrammedtypicallyin10µs.TheEN29LV800features3.0Vvoltagereadandwriteoperation,withaccesstimesasfastas5 | EON Eon Silicon Solution Inc. | | | |
8Megabit(1024Kx8-bit/512Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only GENERALDESCRIPTION TheEN29LV800isan8-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas1,048,576bytesor524,288words.Anybytecanbeprogrammedtypicallyin10µs.TheEN29LV800features3.0Vvoltagereadandwriteoperation,withaccesstimesasfastas5 | EON Eon Silicon Solution Inc. | | | |
8Megabit(1024Kx8-bit/512Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only GENERALDESCRIPTION TheEN29LV800isan8-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas1,048,576bytesor524,288words.Anybytecanbeprogrammedtypicallyin10µs.TheEN29LV800features3.0Vvoltagereadandwriteoperation,withaccesstimesasfastas5 | EON Eon Silicon Solution Inc. | | | |
8Megabit(1024Kx8-bit/512Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only GENERALDESCRIPTION TheEN29LV800isan8-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas1,048,576bytesor524,288words.Anybytecanbeprogrammedtypicallyin10µs.TheEN29LV800features3.0Vvoltagereadandwriteoperation,withaccesstimesasfastas5 | EON Eon Silicon Solution Inc. | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CFEON |
2016+ |
TSSOP48 |
6523 |
房间原装进口现货假一赔十 |
|||
CFEON |
23+ |
TSSOP48 |
28000 |
原装正品 |
|||
CFEON |
23+ |
TSOP |
7635 |
全新原装优势 |
|||
CFEON |
21+ |
TSOP |
35200 |
一级代理/放心采购 |
|||
TSSOP |
2021+ |
TSSOP |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
CFEON |
2022+ |
TSOP |
20000 |
只做原装进口现货.假一罚十 |
|||
CFEON |
TSOP |
68900 |
原包原标签100%进口原装常备现货! |
||||
XTW |
23+ |
QFN |
28380 |
绝对原厂支持只做自己现货优势 |
|||
TSSOP |
23+ |
TSSOP |
6000 |
原装正品假一罚十 |
|||
CFEON |
23+ |
NA/ |
111 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
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EN29LV800T90TI规格书下载地址
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EN29LV800T90TI数据表相关新闻
EN5311QI
EN5311QI
2023-12-1EN5322QI
进口代理
2023-5-26EN5311QI
製造商:Intel 產品類型:轉換電壓穩壓器 RoHS:詳細資料 安裝風格:SMD/SMT 封裝/外殼:QFN-20 輸出電壓:600mVto6V 輸出電流:1A 輸出數:1Output 最高輸入電壓:6.6V 拓撲學:Buck 輸入電壓最小:2.4V 交換頻率:4MHz 最低工作溫度:-40C 最高工作溫度:+85C 系列:EN53xx
2020-10-27EN25QH32B-104HIP
EN25QH32B-104HIP，全新原装当天发货或门市自取0755-82732291.
2019-10-26EN25QH16-104HIP
EN25QH16-104HIP，全新原装当天发货或门市自取0755-82732291.
2019-10-26EN25Q32C-104HIP
EN25Q32C-104HIP，全新原装当天发货或门市自取0755-82732291.
2019-10-26
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