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位置：首页 > IC中文资料第6164页 > EM636165

型号 功能描述 生产厂家&企业 LOGO 操作
EM636165

1Megax16SynchronousDRAM(SDRAM)

Overview TheEM636165SDRAMisahigh-speedCMOSsynchronousDRAMcontaining16Mbits.Itisinternallyconfiguredasadual512Kwordx16DRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe512Kx16bitbanksisorganized

Etron

钰创

Etron
EM636165

1Megax16SynchronousDRAM(SDRAM)

文件：791.08 Kbytes Page：75 Pages

Etron

钰创

Etron
EM636165TS

1Mx16bitSynchronousDRAM(SDRAM)

Overview TheEM636165SDRAMisahigh-speedCMOSsynchronousDRAMcontaining16Mbits.Itisinternallyconfiguredasadual512Kwordx16DRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe512Kx16bitbanksisorganized

Etron

钰创

Etron
EM636165TS-10

1Megax16SynchronousDRAM(SDRAM)

Overview TheEM636165SDRAMisahigh-speedCMOSsynchronousDRAMcontaining16Mbits.Itisinternallyconfiguredasadual512Kwordx16DRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe512Kx16bitbanksisorganized

Etron

钰创

Etron
EM636165TS-10I

1Megax16SynchronousDRAM(SDRAM)

Overview TheEM636165SDRAMisahigh-speedCMOSsynchronousDRAMcontaining16Mbits.Itisinternallyconfiguredasadual512Kwordx16DRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe512Kx16bitbanksisorganized

Etron

钰创

Etron
EM636165TS-10I/10IG

1Megax16SynchronousDRAM(SDRAM)

Overview TheEM636165SDRAMisahigh-speedCMOSsynchronousDRAMcontaining16Mbits.Itisinternallyconfiguredasadual512Kwordx16DRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe512Kx16bitbanksisorganized

Etron

钰创

Etron
EM636165TS-5

1Megax16SynchronousDRAM(SDRAM)

Overview TheEM636165SDRAMisahigh-speedCMOSsynchronousDRAMcontaining16Mbits.Itisinternallyconfiguredasadual512Kwordx16DRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe512Kx16bitbanksisorganized

Etron

钰创

Etron
EM636165TS-55

1Megax16SynchronousDRAM(SDRAM)

Overview TheEM636165SDRAMisahigh-speedCMOSsynchronousDRAMcontaining16Mbits.Itisinternallyconfiguredasadual512Kwordx16DRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe512Kx16bitbanksisorganized

Etron

钰创

Etron
EM636165TS-6

1Megax16SynchronousDRAM(SDRAM)

Overview TheEM636165SDRAMisahigh-speedCMOSsynchronousDRAMcontaining16Mbits.Itisinternallyconfiguredasadual512Kwordx16DRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe512Kx16bitbanksisorganized

Etron

钰创

Etron
EM636165TS-6I/6IG

1Megax16SynchronousDRAM(SDRAM)

Overview TheEM636165SDRAMisahigh-speedCMOSsynchronousDRAMcontaining16Mbits.Itisinternallyconfiguredasadual512Kwordx16DRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe512Kx16bitbanksisorganized

Etron

钰创

Etron
EM636165TS-7

1Megax16SynchronousDRAM(SDRAM)

Overview TheEM636165SDRAMisahigh-speedCMOSsynchronousDRAMcontaining16Mbits.Itisinternallyconfiguredasadual512Kwordx16DRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe512Kx16bitbanksisorganized

Etron

钰创

Etron
EM636165TS-7I/7IG

1Megax16SynchronousDRAM(SDRAM)

Overview TheEM636165SDRAMisahigh-speedCMOSsynchronousDRAMcontaining16Mbits.Itisinternallyconfiguredasadual512Kwordx16DRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe512Kx16bitbanksisorganized

Etron

钰创

Etron
EM636165TS-7L

1Megax16SynchronousDRAM(SDRAM)

Overview TheEM636165SDRAMisahigh-speedCMOSsynchronousDRAMcontaining16Mbits.Itisinternallyconfiguredasadual512Kwordx16DRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe512Kx16bitbanksisorganized

Etron

钰创

Etron
EM636165TS-8

1Megax16SynchronousDRAM(SDRAM)

Overview TheEM636165SDRAMisahigh-speedCMOSsynchronousDRAMcontaining16Mbits.Itisinternallyconfiguredasadual512Kwordx16DRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe512Kx16bitbanksisorganized

Etron

钰创

Etron
EM636165TS-8I/8IG

1Megax16SynchronousDRAM(SDRAM)

Overview TheEM636165SDRAMisahigh-speedCMOSsynchronousDRAMcontaining16Mbits.Itisinternallyconfiguredasadual512Kwordx16DRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe512Kx16bitbanksisorganized

Etron

钰创

Etron
EM636165VE-10

1Megax16SynchronousDRAM(SDRAM)

Overview TheEM636165SDRAMisahigh-speedCMOSsynchronousDRAMcontaining16Mbits.Itisinternallyconfiguredasadual512Kwordx16DRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe512Kx16bitbanksisorganized

Etron

钰创

Etron
EM636165VE-10I

1Megax16SynchronousDRAM(SDRAM)

Overview TheEM636165SDRAMisahigh-speedCMOSsynchronousDRAMcontaining16Mbits.Itisinternallyconfiguredasadual512Kwordx16DRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe512Kx16bitbanksisorganized

Etron

钰创

Etron
EM636165VE-5

1Megax16SynchronousDRAM(SDRAM)

Overview TheEM636165SDRAMisahigh-speedCMOSsynchronousDRAMcontaining16Mbits.Itisinternallyconfiguredasadual512Kwordx16DRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe512Kx16bitbanksisorganized

Etron

钰创

Etron
EM636165VE-55

1Megax16SynchronousDRAM(SDRAM)

Overview TheEM636165SDRAMisahigh-speedCMOSsynchronousDRAMcontaining16Mbits.Itisinternallyconfiguredasadual512Kwordx16DRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe512Kx16bitbanksisorganized

Etron

钰创

Etron
EM636165VE-6

1Megax16SynchronousDRAM(SDRAM)

Overview TheEM636165SDRAMisahigh-speedCMOSsynchronousDRAMcontaining16Mbits.Itisinternallyconfiguredasadual512Kwordx16DRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe512Kx16bitbanksisorganized

Etron

钰创

Etron
EM636165VE-7

1Megax16SynchronousDRAM(SDRAM)

Overview TheEM636165SDRAMisahigh-speedCMOSsynchronousDRAMcontaining16Mbits.Itisinternallyconfiguredasadual512Kwordx16DRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe512Kx16bitbanksisorganized

Etron

钰创

Etron
EM636165VE-7L

1Megax16SynchronousDRAM(SDRAM)

Overview TheEM636165SDRAMisahigh-speedCMOSsynchronousDRAMcontaining16Mbits.Itisinternallyconfiguredasadual512Kwordx16DRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe512Kx16bitbanksisorganized

Etron

钰创

Etron
EM636165VE-8

1Megax16SynchronousDRAM(SDRAM)

Overview TheEM636165SDRAMisahigh-speedCMOSsynchronousDRAMcontaining16Mbits.Itisinternallyconfiguredasadual512Kwordx16DRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe512Kx16bitbanksisorganized

Etron

钰创

Etron
EM636165-XXI

1Megax16SynchronousDRAM(SDRAM)

Overview TheEM636165SDRAMisahigh-speedCMOSsynchronousDRAMcontaining16Mbits.Itisinternallyconfiguredasadual512Kwordx16DRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe512Kx16bitbanksisorganized

Etron

钰创

Etron
EM636165_06

1Megax16SynchronousDRAM(SDRAM)

文件：791.08 Kbytes Page：75 Pages

Etron

钰创

Etron
EM636165TS/BE-10G

1Megax16SynchronousDRAM(SDRAM)

文件：791.08 Kbytes Page：75 Pages

Etron

钰创

Etron
EM636165TS/BE-55G

1Megax16SynchronousDRAM(SDRAM)

文件：791.08 Kbytes Page：75 Pages

Etron

钰创

Etron
EM636165TS/BE-5G

1Megax16SynchronousDRAM(SDRAM)

文件：791.08 Kbytes Page：75 Pages

Etron

钰创

Etron
EM636165TS/BE-6G

1Megax16SynchronousDRAM(SDRAM)

文件：791.08 Kbytes Page：75 Pages

Etron

钰创

Etron
EM636165TS/BE-7G

1Megax16SynchronousDRAM(SDRAM)

文件：791.08 Kbytes Page：75 Pages

Etron

钰创

Etron
EM636165TS/BE-7LG

1Megax16SynchronousDRAM(SDRAM)

文件：791.08 Kbytes Page：75 Pages

Etron

钰创

Etron
EM636165TS/BE-8G

1Megax16SynchronousDRAM(SDRAM)

文件：791.08 Kbytes Page：75 Pages

Etron

钰创

Etron
EM636165TS/VE-10

1Megax16SynchronousDRAM(SDRAM)

文件：791.08 Kbytes Page：75 Pages

Etron

钰创

Etron
EM636165TS/VE-5

1Megax16SynchronousDRAM(SDRAM)

文件：791.08 Kbytes Page：75 Pages

Etron

钰创

Etron
EM636165TS/VE-55

1Megax16SynchronousDRAM(SDRAM)

文件：791.08 Kbytes Page：75 Pages

Etron

钰创

Etron
EM636165TS/VE-6

1Megax16SynchronousDRAM(SDRAM)

文件：791.08 Kbytes Page：75 Pages

Etron

钰创

Etron
EM636165TS/VE-7

1Megax16SynchronousDRAM(SDRAM)

文件：791.08 Kbytes Page：75 Pages

Etron

钰创

Etron
EM636165TS/VE-7L

1Megax16SynchronousDRAM(SDRAM)

文件：791.08 Kbytes Page：75 Pages

Etron

钰创

Etron
EM636165TS/VE-8

1Megax16SynchronousDRAM(SDRAM)

文件：791.08 Kbytes Page：75 Pages

Etron

钰创

Etron

EM636165产品属性

  • 类型

    描述

  • 型号

    EM636165

  • 制造商

    ETRON

  • 制造商全称

    ETRON

  • 功能描述

    1Mega x 16 Synchronous DRAM(SDRAM)

EM636165供应商更多...

更新时间：2024-4-26 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市凌旭科技有限公司
EM636165TS-7
ETRONTECH
2016+
TSSOP
4000
只做原装,假一罚十,公司可开17%增值税发票!
询价
深圳市纳艾斯科技有限公司
EM636165TS-7V
ETRONTE
2020+
TSSOP
8000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
深圳市得捷芯城科技有限公司
EM636165TC-6IG
ETRON
23+
NA/
3470
优势代理渠道,原装正品,可全系列订货开增值税票
询价
深圳市威雅利发展有限公司
EM636165TC-6IG
ETRON
1704+
TSOP50
3350
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市科芯源微电子有限公司
EM636165TS-6G
ETRONTEC
23+
TSSOP
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
询价
深圳市艾宇特电子科技有限公司
EM636165TC-6IG
ETRON
2052+
TSOP50
6542
只做原装正品现货!或订货假一赔十!
询价
深圳市星佑电子有限公司
EM636165TS-6G
ETRON
21+
TSOP
10000
全新原装 公司现货 价优
询价
深圳市环球伟业电子有限公司
EM636165TS-6G
21+
SOT-23
300000
优势代理渠道,原装正品,可全系列订货开增值税票
询价
深圳市航润创能电子集团有限公司
EM636165TC-6IG
ETRON
21+
TSOP50
3510
原装现货假一赔十
询价
千层芯半导体(深圳)有限公司
EM636165TS
ETRONTECH
17+
TSOP
9800
全新进口原装现货假一罚十
询价

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