位置：首页 > IC中文资料第4791页 > E28
E28价格
参考价格：￥562.3235
型号：E280-9U-3 品牌：Vector 备注：这里有E28多少钱，2024年最近7天走势，今日出价，今日竞价，E28批发/采购报价，E28行情走势销售排行榜，E28报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
E28 | Miniature LEDs 文件：1.27057 Mbytes Page：17 Pages | GILWAY Gilway Technical Lamp |  |   |
E28 | 5 current ratings 文件：3.18497 Mbytes Page：3 Pages | CherryCHERRY 珠海确励珠海确励电子有限公司 |  | |
1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY Intel’s28F001BX-Band28F001BX-Tcombinethecost-effectivenessofIntelstandardflashmemorywithfeaturesthatsimplifywriteandallowblockerase.Thesedevicesaidthesystemdesignerbycombiningthefunctionsofseveralcomponentsintoone,makingbootblockflashaninnovativealternativ | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） |  | | |
1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY Intel’s28F001BX-Band28F001BX-Tcombinethecost-effectivenessofIntelstandardflashmemorywithfeaturesthatsimplifywriteandallowblockerase.Thesedevicesaidthesystemdesignerbycombiningthefunctionsofseveralcomponentsintoone,makingbootblockflashaninnovativealternativ | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | | | |
1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY Intel’s28F001BX-Band28F001BX-Tcombinethecost-effectivenessofIntelstandardflashmemorywithfeaturesthatsimplifywriteandallowblockerase.Thesedevicesaidthesystemdesignerbycombiningthefunctionsofseveralcomponentsintoone,makingbootblockflashaninnovativealternativ | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | | | |
1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY Intel’s28F001BX-Band28F001BX-Tcombinethecost-effectivenessofIntelstandardflashmemorywithfeaturesthatsimplifywriteandallowblockerase.Thesedevicesaidthesystemdesignerbycombiningthefunctionsofseveralcomponentsintoone,makingbootblockflashaninnovativealternativ | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | | | |
1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY Intel’s28F001BX-Band28F001BX-Tcombinethecost-effectivenessofIntelstandardflashmemorywithfeaturesthatsimplifywriteandallowblockerase.Thesedevicesaidthesystemdesignerbycombiningthefunctionsofseveralcomponentsintoone,makingbootblockflashaninnovativealternativ | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | | | |
1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY Intel’s28F001BX-Band28F001BX-Tcombinethecost-effectivenessofIntelstandardflashmemorywithfeaturesthatsimplifywriteandallowblockerase.Thesedevicesaidthesystemdesignerbycombiningthefunctionsofseveralcomponentsintoone,makingbootblockflashaninnovativealternativ | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | | | |
1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY Intel’s28F001BX-Band28F001BX-Tcombinethecost-effectivenessofIntelstandardflashmemorywithfeaturesthatsimplifywriteandallowblockerase.Thesedevicesaidthesystemdesignerbycombiningthefunctionsofseveralcomponentsintoone,makingbootblockflashaninnovativealternativ | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | | | |
1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY Intel’s28F001BX-Band28F001BX-Tcombinethecost-effectivenessofIntelstandardflashmemorywithfeaturesthatsimplifywriteandallowblockerase.Thesedevicesaidthesystemdesignerbycombiningthefunctionsofseveralcomponentsintoone,makingbootblockflashaninnovativealternativ | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | | | |
28F002BC 2-MBIT (256K X 8) BOOT BLOCK FLASH MEMORY INTRODUCTION Thisdatasheetcomprisesthespecificationsforthe28F002BC2-Mbitflashmemory.Section1providesanoverviewofthe2-Mbitflashmemory,includingapplications,pinouts,andpindescriptions.Section2describesthememoryorganizationindetail.Section3definesadescriptiono | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | | | |
28F002BC 2-MBIT (256K X 8) BOOT BLOCK FLASH MEMORY INTRODUCTION Thisdatasheetcomprisesthespecificationsforthe28F002BC2-Mbitflashmemory.Section1providesanoverviewofthe2-Mbitflashmemory,includingapplications,pinouts,andpindescriptions.Section2describesthememoryorganizationindetail.Section3definesadescriptiono | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | | | |
5 VOLT BOOT BLOCK FLASH MEMORY SMART5BOOTBLOCKFLASHMEMORYFAMILY2,4,8MBIT Intel’sSmart5bootblockflashmemoryfamilyprovides2-,4-,and8-Mbitmemoriesfeaturinghigh-density,low-cost,nonvolatile,read/writestoragesolutionsforawiderangeofapplications.Theirasymmetricallyblockedarchitecture,flex | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | | | |
SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT SMART5BOOTBLOCKFLASHMEMORYFAMILY2,4,8MBIT Intel’sSmart5bootblockflashmemoryfamilyprovides2-,4-,and8-Mbitmemoriesfeaturinghigh-density,low-cost,nonvolatile,read/writestoragesolutionsforawiderangeofapplications.Theirasymmetricallyblockedarchitecture,flex | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | | | |
SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT SMART5BOOTBLOCKFLASHMEMORYFAMILY2,4,8MBIT Intel’sSmart5bootblockflashmemoryfamilyprovides2-,4-,and8-Mbitmemoriesfeaturinghigh-density,low-cost,nonvolatile,read/writestoragesolutionsforawiderangeofapplications.Theirasymmetricallyblockedarchitecture,flex | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | | | |
5 VOLT BOOT BLOCK FLASH MEMORY SMART5BOOTBLOCKFLASHMEMORYFAMILY2,4,8MBIT Intel’sSmart5bootblockflashmemoryfamilyprovides2-,4-,and8-Mbitmemoriesfeaturinghigh-density,low-cost,nonvolatile,read/writestoragesolutionsforawiderangeofapplications.Theirasymmetricallyblockedarchitecture,flex | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | | | |
SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT SMART5BOOTBLOCKFLASHMEMORYFAMILY2,4,8MBIT Intel’sSmart5bootblockflashmemoryfamilyprovides2-,4-,and8-Mbitmemoriesfeaturinghigh-density,low-cost,nonvolatile,read/writestoragesolutionsforawiderangeofapplications.Theirasymmetricallyblockedarchitecture,flex | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | | | |
5 VOLT BOOT BLOCK FLASH MEMORY SMART5BOOTBLOCKFLASHMEMORYFAMILY2,4,8MBIT Intel’sSmart5bootblockflashmemoryfamilyprovides2-,4-,and8-Mbitmemoriesfeaturinghigh-density,low-cost,nonvolatile,read/writestoragesolutionsforawiderangeofapplications.Theirasymmetricallyblockedarchitecture,flex | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | | | |
SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT SMART5BOOTBLOCKFLASHMEMORYFAMILY2,4,8MBIT Intel’sSmart5bootblockflashmemoryfamilyprovides2-,4-,and8-Mbitmemoriesfeaturinghigh-density,low-cost,nonvolatile,read/writestoragesolutionsforawiderangeofapplications.Theirasymmetricallyblockedarchitecture,flex | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | | | |
5 VOLT BOOT BLOCK FLASH MEMORY SMART5BOOTBLOCKFLASHMEMORYFAMILY2,4,8MBIT Intel’sSmart5bootblockflashmemoryfamilyprovides2-,4-,and8-Mbitmemoriesfeaturinghigh-density,low-cost,nonvolatile,read/writestoragesolutionsforawiderangeofapplications.Theirasymmetricallyblockedarchitecture,flex | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | | | |
BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT INTRODUCTION Thisdatasheetcontains4-,8-,and16-Mbit3VoltFlashFilememoryspecifications.Section1.0providesaflashmemoryoverview.Sections2.0,3.0,4.0,and5.0describethememoryorganizationandfunctionality.Section6.0coverselectricalspecificationsforcommercialandextend | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | | | |
BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT INTRODUCTION Thisdatasheetcontains4-,8-,and16-Mbit3VoltFlashFilememoryspecifications.Section1.0providesaflashmemoryoverview.Sections2.0,3.0,4.0,and5.0describethememoryorganizationandfunctionality.Section6.0coverselectricalspecificationsforcommercialandextend | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | | | |
BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT SMART5FlashFile™MEMORYFAMILY4,8,AND16MBIT Intel’sbyte-wideSmart5FlashFile™memoryfamilyrendersavarietyofdensityofferingsinthesamepackage.The4-,8-,and16-Mbitbyte-wideFlashFilememoriesprovidehigh-density,low-cost,nonvolatile,read/writestoragesolutionsforawi | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | | | |
BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT SMART5FlashFile™MEMORYFAMILY4,8,AND16MBIT Intel’sbyte-wideSmart5FlashFile™memoryfamilyrendersavarietyofdensityofferingsinthesamepackage.The4-,8-,and16-Mbitbyte-wideFlashFilememoriesprovidehigh-density,low-cost,nonvolatile,read/writestoragesolutionsforawi | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | | | |
BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT INTRODUCTION Thisdatasheetcontains4-,8-,and16-MbitSmartVoltageFlashFilememoryspecifications.Section1.0providesaflashmemoryoverview.Sections2.0,through5.0describethememoryorganizationandfunctionality.Section6.0coverselectricalspecificationsforcommercialandextend | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | | | |
BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT INTRODUCTION Thisdatasheetcontains4-,8-,and16-MbitSmartVoltageFlashFilememoryspecifications.Section1.0providesaflashmemoryoverview.Sections2.0,through5.0describethememoryorganizationandfunctionality.Section6.0coverselectricalspecificationsforcommercialandextend | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | | | |
BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT INTRODUCTION Thisdatasheetcontains4-,8-,and16-Mbit3VoltFlashFilememoryspecifications.Section1.0providesaflashmemoryoverview.Sections2.0,3.0,4.0,and5.0describethememoryorganizationandfunctionality.Section6.0coverselectricalspecificationsforcommercialandextend | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | | | |
BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT INTRODUCTION Thisdatasheetcontains4-,8-,and16-Mbit3VoltFlashFilememoryspecifications.Section1.0providesaflashmemoryoverview.Sections2.0,3.0,4.0,and5.0describethememoryorganizationandfunctionality.Section6.0coverselectricalspecificationsforcommercialandextend | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | | | |
BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT SMART5FlashFile™MEMORYFAMILY4,8,AND16MBIT Intel’sbyte-wideSmart5FlashFile™memoryfamilyrendersavarietyofdensityofferingsinthesamepackage.The4-,8-,and16-Mbitbyte-wideFlashFilememoriesprovidehigh-density,low-cost,nonvolatile,read/writestoragesolutionsforawi | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | | | |
BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT SMART5FlashFile™MEMORYFAMILY4,8,AND16MBIT Intel’sbyte-wideSmart5FlashFile™memoryfamilyrendersavarietyofdensityofferingsinthesamepackage.The4-,8-,and16-Mbitbyte-wideFlashFilememoriesprovidehigh-density,low-cost,nonvolatile,read/writestoragesolutionsforawi | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | | | |
8-MBIT (1-MBIT x 8) FlashFileTM MEMORY Intel’s28F008SA8-MbitFlashFileTMMemoryisthehighestdensitynonvolatileread/writesolutionforsolid-statestorage.The28F008SA’sextendedcycling,symmetricallyblockedarchitecture,fastaccesstime,writeautomationandlowpowerconsumptionprovideamorereliable,lowerpower,lighter | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | | | |
8-MBIT (1-MBIT x 8) FlashFileTM MEMORY Intel’s28F008SA8-MbitFlashFileTMMemoryisthehighestdensitynonvolatileread/writesolutionforsolid-statestorage.The28F008SA’sextendedcycling,symmetricallyblockedarchitecture,fastaccesstime,writeautomationandlowpowerconsumptionprovideamorereliable,lowerpower,lighter | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | | | |
BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT INTRODUCTION Thisdatasheetcontains4-,8-,and16-MbitSmartVoltageFlashFilememoryspecifications.Section1.0providesaflashmemoryoverview.Sections2.0,through5.0describethememoryorganizationandfunctionality.Section6.0coverselectricalspecificationsforcommercialandextend | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | | | |
BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT INTRODUCTION Thisdatasheetcontains4-,8-,and16-MbitSmartVoltageFlashFilememoryspecifications.Section1.0providesaflashmemoryoverview.Sections2.0,through5.0describethememoryorganizationandfunctionality.Section6.0coverselectricalspecificationsforcommercialandextend | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | | | |
1024K (128K x 8) CMOS FLASH MEMORY 28F0101024K(128KX8)CMOSFLASHMEMORY Intel’s28F010CMOSflashmemoryoffersthemostcost-effectiveandreliablealternativeforread/writerandomaccessnonvolatilememory.The28F010addselectricalchip-erasureandreprogrammingtofamiliarEPROMtechnology.Memorycontentscanberewrit | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | | | |
1024K (128K x 8) CMOS FLASH MEMORY 28F0101024K(128KX8)CMOSFLASHMEMORY Intel’s28F010CMOSflashmemoryoffersthemostcost-effectiveandreliablealternativeforread/writerandomaccessnonvolatilememory.The28F010addselectricalchip-erasureandreprogrammingtofamiliarEPROMtechnology.Memorycontentscanberewrit | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | | | |
1024K (128K x 8) CMOS FLASH MEMORY 28F0101024K(128KX8)CMOSFLASHMEMORY Intel’s28F010CMOSflashmemoryoffersthemostcost-effectiveandreliablealternativeforread/writerandomaccessnonvolatilememory.The28F010addselectricalchip-erasureandreprogrammingtofamiliarEPROMtechnology.Memorycontentscanberewrit | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | | | |
1024K (128K x 8) CMOS FLASH MEMORY 28F0101024K(128KX8)CMOSFLASHMEMORY Intel’s28F010CMOSflashmemoryoffersthemostcost-effectiveandreliablealternativeforread/writerandomaccessnonvolatilememory.The28F010addselectricalchip-erasureandreprogrammingtofamiliarEPROMtechnology.Memorycontentscanberewrit | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | | | |
BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT SMART5FlashFile™MEMORYFAMILY4,8,AND16MBIT Intel’sbyte-wideSmart5FlashFile™memoryfamilyrendersavarietyofdensityofferingsinthesamepackage.The4-,8-,and16-Mbitbyte-wideFlashFilememoriesprovidehigh-density,low-cost,nonvolatile,read/writestoragesolutionsforawi | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | | | |
BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT SMART5FlashFile™MEMORYFAMILY4,8,AND16MBIT Intel’sbyte-wideSmart5FlashFile™memoryfamilyrendersavarietyofdensityofferingsinthesamepackage.The4-,8-,and16-Mbitbyte-wideFlashFilememoriesprovidehigh-density,low-cost,nonvolatile,read/writestoragesolutionsforawi | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | | | |
28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY INTRODUCTION ThedocumentationoftheIntel28F016SAmemorydeviceincludesthisdatasheet,adetaileduser’smanual,andanumberofapplicationnotes,allofwhicharereferencedattheendofthisdatasheet. IncludesCommercialandExtendedTemperatureSpecifications ■User-Selectable3.3Vo | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | | | |
28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY INTRODUCTION ThedocumentationoftheIntel28F016SAmemorydeviceincludesthisdatasheet,adetaileduser’smanual,andanumberofapplicationnotes,allofwhicharereferencedattheendofthisdatasheet. IncludesCommercialandExtendedTemperatureSpecifications ■User-Selectable3.3Vo | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | | | |
28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY INTRODUCTION ThedocumentationoftheIntel28F016SAmemorydeviceincludesthisdatasheet,adetaileduser’smanual,andanumberofapplicationnotes,allofwhicharereferencedattheendofthisdatasheet. IncludesCommercialandExtendedTemperatureSpecifications ■User-Selectable3.3Vo | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | | | |
28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY INTRODUCTION ThedocumentationoftheIntel28F016SAmemorydeviceincludesthisdatasheet,adetaileduser’smanual,andanumberofapplicationnotes,allofwhicharereferencedattheendofthisdatasheet. IncludesCommercialandExtendedTemperatureSpecifications ■User-Selectable3.3Vo | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | | | |
28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY INTRODUCTION ThedocumentationoftheIntel28F016SAmemorydeviceincludesthisdatasheet,adetaileduser’smanual,andanumberofapplicationnotes,allofwhicharereferencedattheendofthisdatasheet. IncludesCommercialandExtendedTemperatureSpecifications ■User-Selectable3.3Vo | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | | | |
BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT INTRODUCTION Thisdatasheetcontains4-,8-,and16-MbitSmartVoltageFlashFilememoryspecifications.Section1.0providesaflashmemoryoverview.Sections2.0,through5.0describethememoryorganizationandfunctionality.Section6.0coverselectricalspecificationsforcommercialandextend | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | | | |
BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT INTRODUCTION Thisdatasheetcontains4-,8-,and16-MbitSmartVoltageFlashFilememoryspecifications.Section1.0providesaflashmemoryoverview.Sections2.0,through5.0describethememoryorganizationandfunctionality.Section6.0coverselectricalspecificationsforcommercialandextend | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | | | |
16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY Intel’s28F016SV16-MbitFlashFile™memoryisarevolutionaryarchitecturewhichistheidealchoicefordesigningembeddeddirect-executecodeandmassstoragedata/fileflashmemorysystems.Withinnovativecapabilities,low-poweroperation,user-selectableVPPvoltageandhighread/programperf | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | | | |
16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY Intel’s28F016SV16-MbitFlashFile™memoryisarevolutionaryarchitecturewhichistheidealchoicefordesigningembeddeddirect-executecodeandmassstoragedata/fileflashmemorysystems.Withinnovativecapabilities,low-poweroperation,user-selectableVPPvoltageandhighread/programperf | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | | | |
16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY Intel’s28F016SV16-MbitFlashFile™memoryisarevolutionaryarchitecturewhichistheidealchoicefordesigningembeddeddirect-executecodeandmassstoragedata/fileflashmemorysystems.Withinnovativecapabilities,low-poweroperation,user-selectableVPPvoltageandhighread/programperf | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | | | |
16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY Intel’s28F016SV16-MbitFlashFile™memoryisarevolutionaryarchitecturewhichistheidealchoicefordesigningembeddeddirect-executecodeandmassstoragedata/fileflashmemorysystems.Withinnovativecapabilities,low-poweroperation,user-selectableVPPvoltageandhighread/programperf | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | | | |
16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY Intel’s28F016SV16-MbitFlashFile™memoryisarevolutionaryarchitecturewhichistheidealchoicefordesigningembeddeddirect-executecodeandmassstoragedata/fileflashmemorysystems.Withinnovativecapabilities,low-poweroperation,user-selectableVPPvoltageandhighread/programperf | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | | | |
16-MBIT (1 MBIT x 16) DRAM-INTERFACE FLASH MEMORY INTRODUCTION ThedocumentationoftheIntel28F016XDflashmemorydeviceincludesthisdatasheet,adetaileduser’smanual,andanumberofapplicationnotesanddesigntools,allofwhicharereferencedinAppendixB. Thedatasheetisintendedtogiveanoverviewofthechipfeature-setandof | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | | | |
16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY Intel’s28F016XS16-Mbitflashmemoryisarevolutionaryarchitecturewhichistheidealchoicefordesigningtrulyrevolutionaryhigh-performanceproducts.Combiningveryhighreadperformancewiththeintrinsicnonvolatilityofflashmemory,the28F016XSeliminatesthetraditionalredundantmemo | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | | | |
16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY Intel’s28F016XS16-Mbitflashmemoryisarevolutionaryarchitecturewhichistheidealchoicefordesigningtrulyrevolutionaryhigh-performanceproducts.Combiningveryhighreadperformancewiththeintrinsicnonvolatilityofflashmemory,the28F016XSeliminatesthetraditionalredundantmemo | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | | | |
16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY Intel’s28F016XS16-Mbitflashmemoryisarevolutionaryarchitecturewhichistheidealchoicefordesigningtrulyrevolutionaryhigh-performanceproducts.Combiningveryhighreadperformancewiththeintrinsicnonvolatilityofflashmemory,the28F016XSeliminatesthetraditionalredundantmemo | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | | | |
16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY Intel’s28F016XS16-Mbitflashmemoryisarevolutionaryarchitecturewhichistheidealchoicefordesigningtrulyrevolutionaryhigh-performanceproducts.Combiningveryhighreadperformancewiththeintrinsicnonvolatilityofflashmemory,the28F016XSeliminatesthetraditionalredundantmemo | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | | | |
28F020 2048K (256K X 8) CMOS FLASH MEMORY Intel’s28F020CMOSflashmemoryoffersthemostcost-effectiveandreliablealternativeforread/writerandomaccessnonvolatilememory.The28F020addselectricalchip-erasureandreprogrammingtofamiliarEPROMtechnology.Memorycontentscanberewritten:inatestsocket;inaPROM-programmer | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | | | |
28F020 2048K (256K X 8) CMOS FLASH MEMORY Intel’s28F020CMOSflashmemoryoffersthemostcost-effectiveandreliablealternativeforread/writerandomaccessnonvolatilememory.The28F020addselectricalchip-erasureandreprogrammingtofamiliarEPROMtechnology.Memorycontentscanberewritten:inatestsocket;inaPROM-programmer | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | | | |
28F020 2048K (256K X 8) CMOS FLASH MEMORY Intel’s28F020CMOSflashmemoryoffersthemostcost-effectiveandreliablealternativeforread/writerandomaccessnonvolatilememory.The28F020addselectricalchip-erasureandreprogrammingtofamiliarEPROMtechnology.Memorycontentscanberewritten:inatestsocket;inaPROM-programmer | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | | |
E28产品属性
- 类型
描述
- 型号
E28
- 制造商
Siemens
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INTEL |
2020+ |
TSOP |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
|||
INTEL/英特尔 |
22+ |
SOP |
100000 |
代理渠道/只做原装/可含税 |
|||
INTEL(英特尔) |
23+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
INTEL |
23+ |
SOP40 |
20000 |
原厂原装正品现货 |
|||
INTEL |
23+ |
PDIP8 |
18000 |
||||
Intel/Altera |
23+ |
6000 |
|||||
INTEL |
0508+ |
SOP |
391 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INTEL/英特尔 |
23+ |
PLCC84 |
18098 |
终端可以免费供样,支持BOM配单! |
|||
INTEL/英特尔 |
24+ |
TSOP |
990000 |
明嘉莱只做原装正品现货 |
|||
DLZ |
22+ |
TSOP56 |
354000 |
E28芯片相关品牌
E28规格书下载地址
E28参数引脚图相关
- fml22s
- flotherm
- finder继电器
- fc114
- fangtek
- f83
- f411
- f4031
- f338
- F330
- f133
- f1212
- ex128
- et600
- ESD
- ep9315
- ep1c3t144c8n
- EMI滤波器
- em35
- EDA
- E2S-Q22
- E2S-Q21
- E2S-Q16
- E2S-Q15
- E2S-Q14
- E2S-Q13
- E2S-Q12
- E2S-Q11
- E2R-A01
- E2PBG
- E2N65
- E2N60
- E2K-C
- E2EX2E1
- E2-CL
- E2C-EDA
- E2C-C1A
- E2AM12KS04M1C1
- E2A-M12KS04-M1-B2
- E2AM12KS04M1B2
- E2A-M12KS04-M1-B1
- E2A-M12KN08-WP-C12M
- E2A-M12KN08-WP-B15M
- E2A-M12KN08-WP-B1-2M
- E2A-M12KN08-WP-B12M
- E2AM12KN08WPB12M
- E2A-M12KN08-M1-C1
- E2A-M12KN08-M1-B1
- E2AM12KN08M1B1
- E2A-M08LS02-M1-B1
- E2AM08LS02M1B1
- E2AM08KS02M1C1
- E2A-M08KS02-M1-B1
- E2A-M08KN04-M1-C1
- E2A3M18KS11M1C1
- E2A3M12KS06M1B1
- E288CC
- E280-9U-3
- E2801LF
- E2801
- E2799
- E2791LF
- E2791
- E2747LFT
- E2747LF
- E2747
- E-272
- E-2708
- E-2702
- E27-0-10107AL001
- E26BL
- E269H
- E2688A
- E2681A
- E2667B
- E2666B
- E2625A
- E25MP
- E25A2CS
- E25A2CR
- E2560
- E2544S
- E2542S
- E25-3F3
- E2534S
- E2532S
- E250WB
- E250TH
- E250TE
- E250JN
- E250JL
- E250E
- E2508-BLUE
- E-250
- E250
- E24SR06508NRFA
- E244-01R-G-HG-ZU
- E243AY4
- E243-41S-G-RN-AJ-AJ
E28数据表相关新闻
E2AM12LS04M1B1
E2AM12LS04M1B1
2022-9-7E2A-S12KS04-WP-B12M原装特价现货出售
E2A-S12KS04-WP-B12M
2022-7-11E101SD1CBE
E101SD1CBE
2021-11-16E104-035R
E104-035R，全新原装当天发货或门市自取0755-82732291.
2019-11-26E2EL-X8F1-DM1C
深圳科雨电子有限公司，联系人：卢小姐手机：18975515225 原装正品大量现货，有需要的可以联系我QQ:97877805微信：wei555222777
2019-8-14E211ATF-缓冲器/驱动器...
描述该Edge211是一个双三元司机在制造电压CMOS全过程。它是专为自动测试设备和仪器在成本，功能密度和电源都处于溢价。每个tristatable驱动程序是能够产生3个级别-一为逻辑高，为逻辑低之一，对于任何一终止电压或特殊的编程电压。该Edge211的目的是提供一个极低的泄漏，低成本，低功耗，小封装，驱动解决方案100兆赫及以下针电子应用。特点•100MHz运行•12V的
2013-3-5
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
