| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
40A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N60B3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  |   | |
40A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N60B3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
40A,600V,UFSSeriesN-ChannelIGBTs TheHGT1S20N60B3S,theHGTP20N60B3andtheHGTG20N60B3areGenerationIIIMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.T | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
40A,600V,UFSSeriesN-ChannelIGBTs TheHGT1S20N60B3S,theHGTP20N60B3andtheHGTG20N60B3areGenerationIIIMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconduction lossofabipolartransistor | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |  | | |
40A,600V,UFSSeriesN-ChannelIGBTs TheHGT1S20N60B3S,theHGTP20N60B3andtheHGTG20N60B3areGenerationIIIMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.T | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
22+ |
SMD |
50000 |
只做原装正品,假一罚十,欢迎咨询 |
|||
FSC |
2018+ |
TO-3P |
11256 |
只做进口原装正品!假一赔十! |
|||
ON/安森美 |
22+ |
SMD |
12800 |
本公司只做进口原装!优势低价出售! |
|||
onsemi(安森美) |
23+ |
TO2473 |
6000 |
||||
ON/安森美 |
22+ |
TO-247-3 |
6000 |
只做原装,假一赔十 |
|||
Fairchi |
17+ |
TO-247 |
6000 |
进口原装正品假一赔十,货期7-10天 |
|||
onsemi(安森美) |
21+ |
TO-247-3 |
10000 |
只做原装 假一赔万 |
|||
FSC/ON |
23+ |
原包装原封 □□ |
48281 |
原装进口特价供应 QQ 1304306553 更多详细咨询 库存 |
|||
ON/安森美 |
24+ |
GBT-TO-247 |
860000 |
明嘉莱只做原装正品现货 |
|||
ON/安森美 |
22+ |
SMD |
8880 |
原装认准芯泽盛世！ |
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描述该Edge211是一个双三元司机在制造电压CMOS全过程。它是专为自动测试设备和仪器在成本，功能密度和电源都处于溢价。每个tristatable驱动程序是能够产生3个级别-一为逻辑高，为逻辑低之一，对于任何一终止电压或特殊的编程电压。该Edge211的目的是提供一个极低的泄漏，低成本，低功耗，小封装，驱动解决方案100兆赫及以下针电子应用。特点•100MHz运行•12V的
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